Light extraction enhancement of InGaN light-emitting diode by roughening both undoped micropillar-structure GaN and p-GaN as well as employing an omnidirectional reflector
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Keyword(s):
2014 ◽
Vol 45
(1)
◽
pp. 1530-1532
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2012 ◽
Vol 2
(1)
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pp. P13-P15
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2013 ◽
Vol 52
(9R)
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pp. 092101
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