Back-gate ZnO nanowire field-effect transistors each with a top Ω shaped Au contact

2008 ◽  
Vol 93 (3) ◽  
pp. 033102 ◽  
Author(s):  
W. Q. Yang ◽  
L. Dai ◽  
R. M. Ma ◽  
C. Liu ◽  
T. Sun ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Zno Nanowire ◽  
Back Gate

Comparison Between the Electrical Properties of ZnO Nanowires Based Field Effect Transistors Fabricated by Back- and Top-Gate Approaches

2008 ◽  
Vol 8 (11) ◽  
pp. 6010-6016 ◽  
Author(s):  
Y. K. Park ◽  
Ahmad Umar ◽  
S. H. Kim ◽  
J.-H. Kim ◽  
E. W. Lee ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electron Beam Lithography ◽  
Field Effect ◽  
Thermal Evaporation ◽  
Field Effect Transistors ◽  
Zinc Powder ◽  
Zno Nanowires ◽  
Zno Nanowire ◽  
Back Gate ◽  
Source Materials

Large-quality, well-crystallized growth of ZnO nanowires was done via non-catalytic thermal evaporation process on silicon substrate only by using metallic zinc powder and oxygen as source materials for zinc and oxygen, respectively. The electrical properties of the as-grown ZnO nanowires were examined by fabricating a single nanowire based FETs which were fabricated via two approaches, i.e., back- and top-gate approaches by using electron beam lithography (EBL) and photolithography processes. ZnO FETs electrical properties were characterized by IDS–VDS and IDS–VGS measurement. The fabricated single ZnO nanowire based FETs by back- and top-gate approaches exhibited field effect mobilities of ∼4.25 and ∼12.76 cm2/Vs, respectively. Moreover, the carrier concentrations for the fabricated back- and top-gate FETs were ∼1.6 × 1017 and ∼1.37 × 1018 cm−3, respectively. From our studies it was observed that the fabricated top-gate FETs exhibited higher and good electrical properties as compared to ZnO nanowire FETs fabricated using back-gate approaches.

scholarly journals Electrical and optical properties of single As-doped ZnO nanowire field effect transistors

2009 ◽  
Vol 58 (6) ◽  
pp. 4156
Author(s):  
Zhang Jun-Yan ◽  
Deng Tian-Song ◽  
Shen Xin ◽  
Zhu Kong-Tao ◽  
Zhang Qi-Feng ◽  
...  
Keyword(s):  
Optical Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Zno Nanowire ◽  
Electrical And Optical Properties ◽  
Doped Zno

scholarly journals High performance ZnO nanowire field effect transistors with organic gate nanodielectrics: effects of metal contacts and ozone treatment

2007 ◽  
Vol 18 (15) ◽  
pp. 155201 ◽  
Author(s):  
Sanghyun Ju ◽  
Kangho Lee ◽  
Myung-Han Yoon ◽  
Antonio Facchetti ◽  
Tobin J Marks ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Ozone Treatment ◽  
Metal Contacts ◽  
Zno Nanowire

A fabrication technique for top-gate ZnO nanowire field-effect transistors by a photolithography process

2007 ◽  
Vol 84 (5-8) ◽  
pp. 1622-1626 ◽  
Author(s):  
Kihyun Keem ◽  
Jeongmin Kang ◽  
Changjoon Yoon ◽  
Donghyuk Yeom ◽  
Dong-Young Jeong ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Fabrication Technique ◽  
Zno Nanowire ◽  
Photolithography Process

Fabrication and Device Characterization of Omega-Shaped-Gate ZnO Nanowire Field-Effect Transistors

Nano Letters ◽  
2006 ◽  
Vol 6 (7) ◽  
pp. 1454-1458 ◽  
Author(s):  
Kihyun Keem ◽  
Dong-Young Jeong ◽  
Sangsig Kim ◽  
Moon-Sook Lee ◽  
In-Seok Yeo ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Zno Nanowire ◽  
Device Characterization

Tuning of the Electronic Characteristics of ZnO Nanowire Field Effect Transistors by Proton Irradiation

ACS Nano ◽  
2010 ◽  
Vol 4 (2) ◽  
pp. 811-818 ◽  
Author(s):  
Woong-Ki Hong ◽  
Gunho Jo ◽  
Jung Inn Sohn ◽  
Woojin Park ◽  
Minhyeok Choe ◽  
...  
Keyword(s):  
Field Effect ◽  
Proton Irradiation ◽  
Field Effect Transistors ◽  
Zno Nanowire

Proton Irradiation-Induced Electrostatic Modulation in ZnO Nanowire Field-Effect Transistors With Bilayer Gate Dielectric

2012 ◽  
Vol 11 (5) ◽  
pp. 918-923 ◽  
Author(s):  
Gunho Jo ◽  
Woong-Ki Hong ◽  
Minhyeok Choe ◽  
Woojin Park ◽  
Yung Ho Kahng ◽  
...  
Keyword(s):  
Field Effect ◽  
Proton Irradiation ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Zno Nanowire
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