Evolution mechanisms of the surface morphology of grains in ZnO thin films grown on p-InP substrates due to thermal annealing

2008 ◽  
Vol 93 (2) ◽  
pp. 021904 ◽  
Author(s):  
J. M. Yuk ◽  
J. Y. Lee ◽  
Y. S. No ◽  
T. W. Kim ◽  
W. K. Choi
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Thermal Annealing ◽  
Zno Thin Films ◽  
Inp Substrates

scholarly journals Effects of Thermal Annealing on the Characteristics of High Frequency FBAR Devices

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 397
Author(s):  
Yu-Chen Chang ◽  
Ying-Chung Chen ◽  
Bing-Rui Li ◽  
Wei-Che Shih ◽  
Jyun-Min Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Annealing ◽  
Electromechanical Coupling ◽  
Zno Thin Films ◽  
Electromechanical Coupling Coefficient ◽  
Back Side ◽  
Zno Thin Film ◽  
Frequency Responses ◽  
Sputtering System

In this study, piezoelectric zinc oxide (ZnO) thin film was deposited on the Pt/Ti/SiNx/Si substrate to construct the FBAR device. The Pt/Ti multilayers were deposited on SiNx/Si as the bottom electrode and the Al thin film was deposited on the ZnO piezoelectric layer as the top electrode by a DC sputtering system. The ZnO thin film was deposited onto the Pt thin film by a radio frequency (RF) magnetron sputtering system. The cavity on back side for acoustic reflection of the FBAR device was achieved by KOH solution and reactive ion etching (RIE) processes. The crystalline structures and surface morphologies of the films were analyzed by X-ray diffraction (XRD) and field emission scanning electron microscope (FE-SEM). The optimized as-deposited ZnO thin films with preferred (002)-orientation were obtained under the sputtering power of 80 W and sputtering pressure of 20 mTorr. The crystalline characteristics of ZnO thin films and the frequency responses of the FBAR devices can be improved by using the rapid thermal annealing (RTA) process. The optimized annealing temperature and annealing time are 400 °C and 10 min, respectively. Finally, the FBAR devices with structure of Al/ZnO/Pt/Ti/SiNx/Si were fabricated. The frequency responses showed that the return loss of the FBAR device with RTA annealing was improved from −24.07 to −34.66 dB, and the electromechanical coupling coefficient (kt2) was improved from 1.73% to 3.02% with the resonance frequency of around 3.4 GHz.

Susceptor and Proximity Rapid Thermal Annealing of InP

1990 ◽  
Vol 181 ◽  
Author(s):  
A. Katz ◽  
S. J. Pearton ◽  
M. Geva
Keyword(s):  
Surface Morphology ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Substrate Surface ◽  
Effective Surface ◽  
Group V ◽  
Surface Protection ◽  
Pit Formation ◽  
Annealing Cycle ◽  
Inp Substrates

ABSTRACTAn intensive comparison between the efficiency of InP rapid thermal annealing within two types of SiC-coated graphite susceptors and by using the more conventional proximity approach, in providing degradation-free substrate surface morphology, was carried out. The superiority of annealing within a susccptor was clearly demonstrated through the evaluation of AuGe contact performance to carbon-implanted InP substrates, which were annealed to activate the implants prior to the metallization. The susceptor annealing provided better protection against edge degradation, slip formation and better surface morphology, due to the elimination of P outdiffusion and pit formation. The two SiC-coated susceptors that were evaluated differ from each other in their geometry. The first type must be charged with the group V species prior to any annealing cycle. Under the optimum charging conditions, effective surface protection was provided only to one anneal (750°C, 10s) of InP before charging was necessary. The second contained reservoirs for provision of the group V element partial pressure, enabled high temperature annealing at the InP without the need for continual recharging of the susceptor. Thus, one has the ability to subsequentially anneal a lot of InP wafers at high temperatures without inducing any surface deterioration.

Improved Electrical Conduction Properties in Unintentionally-doped ZnO Thin Films Treated by Rapid Thermal Annealing

2011 ◽  
Vol 59 (4) ◽  
pp. 2774-2777 ◽  
Author(s):  
Youngmin Lee ◽  
Choeun Lee ◽  
Eunhee Shim ◽  
Eiwhan Jung ◽  
Jinyong Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Electrical Conduction ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Conduction Properties

Thermal Annealing Effects of Initial Zn Layers on the Structural and the Optical Properties of ZnO Thin Films Grown by Using PA-MBE

2011 ◽  
Vol 58 (5(1)) ◽  
pp. 1320-1323 ◽  
Author(s):  
Min Young Cho ◽  
Hyun Young Choi ◽  
Min Su Kim ◽  
Jae-Young Leem ◽  
Dong-Yul Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Thermal Annealing ◽  
Zno Thin Films ◽  
Annealing Effects

Effect of thermal annealing on the properties of ZnO thin films

Vacuum ◽  
2021 ◽  
Vol 183 ◽  
pp. 109776
Author(s):  
Weon Cheol Lim ◽  
Jitendra Pal Singh ◽  
Younghak Kim ◽  
Jonghan Song ◽  
Keun Hwa Chae ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Zno Thin Films
Sign in / Sign up

Export Citation Format

Share Document