Electronic transport in heavily Si doped cubic boron nitride films epitaxially grown on diamond(001)

2008 ◽  
Vol 104 (2) ◽  
pp. 023703 ◽  
Author(s):  
Hong Yin ◽  
Ivan Pongrac ◽  
Paul Ziemann
Keyword(s):  
Boron Nitride ◽  
Electronic Transport ◽  
Cubic Boron Nitride ◽  
Si Doped ◽  
Boron Nitride Films

scholarly journals Nucleation and Growth of Cubic Boron Nitride Films Produced by Ion-Assisted Pulsed Laser Deposition

1993 ◽  
Vol 316 ◽  
Author(s):  
T. A. Friedmann ◽  
D. L. Medlin ◽  
P. B. Mirkarimi ◽  
K. F. McCarty ◽  
E. J. Klaus ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Growth Parameters ◽  
Cubic Boron Nitride ◽  
Ion Source ◽  
Growth Time ◽  
Grain Sizes ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Parametric Studies ◽  
Boron Nitride Films

ABSTRACTWe are studying the boron nitride system by using a pulsed excimer laser to ablate from hexagonal BN (hBN) targets to form cubic BN (cBN) films. We are depositing BN films on heated (25 - 800°C) Si (100) surfaces and are using a broad-beam ion source operated with Ar and N2 source gasses to produce BN films with a high percentage of sp3-bonded cBN. In order to understand and optimize the growth and nucleation of cBN films, parametric studies of the growth parameters have been performed. The best films to date show >85% sp3-bonded BN as determined from Fourier-transform infrared (FTIR) reflection spectroscopy. High resolution transmission electron microscopy (TEM) and selected area electron diffraction confirm the presence of cBN in these samples. The films are polycrystalline and show grain sizes up to 30- 40 nm. We find from both the FTIR and TEM analyses that the cBN content in these films evolves with growth time. Initially, the films are deposited as hBN and the cBN nucleates on this hBN underlayer. Importantly, the position of the cBN IR phonon also changes with growth time. Initially this mode appears near 1130 cm-1 and the position decreases with growth time to a constant value of 1085 cm-1. Since in bulk cBN this IR mode appears at 1065 cm-1, a large compressive stress induced by the ion bombardment is suggested. In addition, we report on the variation in cBN percentage with temperature.

scholarly journals Preparation of cubic boron nitride films by radio frequency sputtering

2006 ◽  
Vol 55 (10) ◽  
pp. 5441
Author(s):  
Tian Ling ◽  
Ding Yi ◽  
Chen Hao ◽  
Liu Jun-Kai ◽  
Deng Jin-Xiang ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Radio Frequency ◽  
Cubic Boron Nitride ◽  
Radio Frequency Sputtering ◽  
Boron Nitride Films

Growth process of cubic boron nitride films in bias sputter deposition

1997 ◽  
Vol 295 (1-2) ◽  
pp. 137-141 ◽  
Author(s):  
Yukiko Yamada ◽  
Yoshinao Tatebayashi ◽  
Osamu Tsuda ◽  
Toyonobu Yoshida
Keyword(s):  
Boron Nitride ◽  
Growth Process ◽  
Cubic Boron Nitride ◽  
Sputter Deposition ◽  
Boron Nitride Films

Deposition of high quality cubic boron nitride films on nickel substrates

1994 ◽  
Vol 65 (8) ◽  
pp. 971-973 ◽  
Author(s):  
Fangqing Zhang ◽  
Yongping Guo ◽  
Zhizhong Song ◽  
Guanghua Chen
Keyword(s):  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
High Quality ◽  
Nickel Substrates ◽  
Boron Nitride Films

Cubic Boron Nitride Films

2014 ◽  
pp. 607-639 ◽  
Author(s):  
Wenjun Zhang ◽  
Y.M. Chong ◽  
Bin He ◽  
I. Bello ◽  
Shuit-Tong Lee
Keyword(s):  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
Boron Nitride Films
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