The Effect of Hydrogen Partial Pressure on the Chemical Vapor Deposition of Zirconium Carbide and Niobium Carbide Coatings

1994 ◽  
Author(s):  
Albert H. Bremser ◽  
Helen H. Moeller ◽  
Mohamed S. El-Genk ◽  
Mark D. Hoover
Keyword(s):  
Chemical Vapor Deposition ◽  
Partial Pressure ◽  
Vapor Deposition ◽  
Niobium Carbide ◽  
Zirconium Carbide ◽  
Chemical Vapor ◽  
Hydrogen Partial Pressure ◽  
Carbide Coatings

Deposition Mechanism for Chemical Vapor Deposition of Zirconium Carbide Coatings

2008 ◽  
Vol 91 (4) ◽  
pp. 1249-1252 ◽  
Author(s):  
Yiguang Wang ◽  
Qiaomu Liu ◽  
Jinling Liu ◽  
Litong Zhang ◽  
Laifei Cheng
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Zirconium Carbide ◽  
Chemical Vapor ◽  
Deposition Mechanism ◽  
Carbide Coatings

FORMATION OF SILICON CARBIDE COATINGS BY CHEMICAL VAPOR DEPOSITION (review). Part 1

2021 ◽  
pp. 100-111
Author(s):  
D.V. Sidorov ◽  
◽  
A.A. Schavnev ◽  
A.A. Melentev ◽  
◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Point Of View ◽  
Technological Parameters ◽  
Technical Literature ◽  
Pure Silicon ◽  
Carbide Coatings ◽  
Complex Process

The article provides an overview of the scientific and technical literature in the field of the formation of silicon carbide coatings by chemical vapor deposition (CVD). CVD is a complex process, approaches to which vary depending on the tasks being solved. Depending on the technological parameters, the initial reagents, the substrate for deposition, the type and design of the CVD reactors, it is possible to achieve both the deposition of pure silicon carbide and the co-deposition of silicon and/or carbon. In the first part of the article, attention is paid to the study of CVD from the point of view of the mechanisms of chemical reactions, the design of the deposition apparatus, the substrates for deposition.

Chemical Vapor Deposition of Niobium Carbide using a Novel Organometallic Precursor.

1989 ◽  
Vol 168 ◽  
Author(s):  
Paul D. Stupik ◽  
Linda K. Cheatham ◽  
John J. Graham ◽  
Andrew R. Barron
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Atmospheric Pressure ◽  
Niobium Carbide ◽  
Chemical Vapor ◽  
Stoichiometric Ratio ◽  
X Ray ◽  
Organometallic Precursor ◽  
Scanning Electron

AbstractChemical vapor deposition from (MeCp)2Nb(allyl) at atmospheric pressure yields niobium carbide films at temperatures as low as 300°C. X-ray photoelectron spectroscopy (XPS) studies indicate that the bulk films contain a carbide phase and a nearly stoichiometric ratio of niobium to carbon. The morphology of the films has been examined by scanning electron microscopy (SEM).

Control of stoichiometry, microstructure, and mechanical properties in SiC coatings produced by fluidized bed chemical vapor deposition

2008 ◽  
Vol 23 (6) ◽  
pp. 1785-1796 ◽  
Author(s):  
E. López-Honorato ◽  
P.J. Meadows ◽  
J. Tan ◽  
P. Xiao
Keyword(s):  
Mechanical Properties ◽  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Young’S Modulus ◽  
Fluidized Bed ◽  
Vapor Deposition ◽  
Young's Modulus ◽  
Chemical Vapor ◽  
Carbide Coatings ◽  
Fuel Particles

Stoichiometric silicon carbide coatings the same as those used in the formation of TRISO (TRistructural ISOtropic) fuel particles were produced by the decomposition of methyltrichlorosilane in hydrogen. Fluidized bed chemical vapor deposition at around 1500 °C, produced SiC with a Young’s modulus of 362 to 399 GPa. In this paper we demonstrate the deposition of stoichiometric silicon carbide coatings with refined microstructure (grain size between 0.4 and 0.8 μm) and enhanced mechanical properties (Young’s modulus of 448 GPa and hardness of 42 GPa) at 1300 °C by the addition of propene. The addition of ethyne, however, had little effect on the deposition of silicon carbide. The effect of deposition temperature and precursor concentration were correlated to changes in the type of molecules participating in the deposition mechanism.

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