Monte Carlo Simulation of the Optical Absorption of Hydrogenated Nanocrystalline Silicon Thin Films

2008 ◽  
Author(s):  
Fatiha Besahraoui ◽  
Jamal Dine Sib ◽  
Yahia Bouizem ◽  
Larbi Chahed ◽  
B. G. Sidharth ◽  
...  
Keyword(s):  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Optical Absorption ◽  
Nanocrystalline Silicon ◽  
Silicon Thin Films

Optical Absorption in Co-Deposited Mixed-Phase Hydrogenated Amorphous/Nanocrystalline Silicon Thin Films

2010 ◽  
Vol 1245 ◽  
Author(s):  
Lee Wienkes ◽  
Aaron Besaw ◽  
Curtis Anderson ◽  
David Bobela ◽  
Paul Stradins ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Absorption ◽  
Absorption Spectra ◽  
Defect Density ◽  
Amorphous Material ◽  
Nanocrystalline Silicon ◽  
Esr Spectra ◽  
Hydrogenated Silicon ◽  
Silicon Thin Films ◽  
Electron Donation

AbstractThe conductivity of amorphous/nanocrystalline hydrogenated silicon thin films (a/nc-Si:H) deposited in a dual chamber co-deposition system exhibits a non-monotonic dependence on the nanocrystal concentration. Optical absorption measurements derived from the constant photocurrent method (CPM) and preliminary electron spin resonance (ESR) data for similarly prepared materials are reported. The optical absorption spectra, in particular the subgap absorption, are found to be independent of nanocrystalline density for relatively small crystal fractions (< 4%). For films with a higher crystalline content, the absorption spectra indicate broader Urbach slopes and higher midgap absorption. The ESR spectra show an approximately constant defect density across all of the films. These data are interpreted in terms of a model involving electron donation from the nanocrystals into the amorphous material.

Magnetic Resonance in Hydrogenated Nanocrystalline Silicon Thin Films

2008 ◽  
Vol 1066 ◽  
Author(s):  
Tining Su ◽  
Tong Ju ◽  
Baojie Yan ◽  
Jeffrey Yang ◽  
Subhendu Guha ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Spin Resonance ◽  
Magnetic Resonance ◽  
Optical Absorption ◽  
Electronic States ◽  
Amorphous Region ◽  
Nanocrystalline Silicon ◽  
Silicon Thin Films ◽  
Exciting Photon ◽  
Spin Resonance

ABSTRACTWe have investigated the localized electronic states in mixed-phase hydrogenated nanocrystalline silicon thin films (nc-Si:H) with electron-spin-resonance (ESR). The dark ESR signal most likely arises from defects at the grain boundaries or within the crystallites. With illumination with photon energies ranging from 1.2 eV to 2.0 eV, there is no evidence of photo-induced carriers trapped in the bandtail states within the amorphous region. Dependence of the light-induced ESR (LESR) upon the exciting photon energy reveals that, at different excitation photon energies, different regions dominate the optical absorption. This behavior may have potential consequences for understanding the light-induced degradation in nc-Si:H.

scholarly journals Silicon thin films thickness estimation: A Monte Carlo simulation study

Optik ◽  
2015 ◽  
Vol 126 (9-10) ◽  
pp. 1040-1043 ◽  
Author(s):  
Mohammad Babazadeh ◽  
Hossein Movla ◽  
Farzad Ghafari Jouneghani ◽  
Davoud Salami
Keyword(s):  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Simulation Study ◽  
Monte Carlo Simulation Study ◽  
Thickness Estimation ◽  
Silicon Thin Films

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

Giant Anisotropy of Conductivity in Hydrogenated Nanocrystalline Silicon Thin Films

1998 ◽  
Vol 536 ◽  
Author(s):  
A. B. Pevtsov ◽  
N. A. Feoktistov ◽  
V. G. Golubev
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Percolation Theory ◽  
Nanocrystalline Silicon ◽  
Spatial Light Modulators ◽  
Light Emitting ◽  
Light Modulators ◽  
Silicon Thin Films ◽  
Longitudinal Conductivity ◽  
Transverse Conductivity

AbstractThin (<1000 Å) hydrogenated nanocrystalline silicon films are widely used in solar cells, light emitting diodes, and spatial light modulators. In this work the conductivity of doped and undoped amorphous-nanocrystalline silicon thin films is studied as a function of film thickness: a giant anisotropy of conductivity is established. The longitudinal conductivity decreases dramatically (by a factor of 109 − 1010) as the layer thickness is reduced from 1500 Å to 200 Å, while the transverse conductivity remains close to that of a doped a- Si:H. The data obtained are interpreted in terms of the percolation theory.

scholarly journals Influence of deposition parameters on the optical absorption of amorphous silicon thin films

2020 ◽  
Vol 2 (3) ◽  
Author(s):  
Lukas Terkowski ◽  
Iain W. Martin ◽  
Daniel Axmann ◽  
Malte Behrendsen ◽  
Felix Pein ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Absorption ◽  
Amorphous Silicon ◽  
Silicon Thin Films ◽  
Deposition Parameters
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