Effect of Varying Quantum Well Thickness on the Performance of InGaN∕GaN Single Quantum Well Laser Diode

2008 ◽  
Author(s):  
S. M. Thahab ◽  
H. Abu Hassan ◽  
Z. Hassan ◽  
H. B. Senin ◽  
G. Carini ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Laser

Widely separate wavelength switching of single quantum well laser diode by injection‐current control

1986 ◽  
Vol 49 (24) ◽  
pp. 1629-1631 ◽  
Author(s):  
Yasunori Tokuda ◽  
Noriaki Tsukada ◽  
Kenzo Fujiwara ◽  
Koichi Hamanaka ◽  
Takashi Nakayama
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Current Control ◽  
Injection Current ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Wavelength Switching ◽  
Quantum Well Laser

High-power, 8W CW, single-quantum-well laser diode array

1988 ◽  
Vol 24 (2) ◽  
pp. 113 ◽  
Author(s):  
D.F. Welch ◽  
B. Chan ◽  
W. Streifer ◽  
D.R. Scifres
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
High Power ◽  
Diode Array ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Laser Diode Array ◽  
Quantum Well Laser

A 1.3-µm GaInNAs/GaAs Single-Quantum-Well Laser Diode with a High Characteristic Temperature over 200 K

2000 ◽  
Vol 39 (Part 2, No. 2A) ◽  
pp. L86-L87 ◽  
Author(s):  
Takeshi Kitatani ◽  
Kouji Nakahara ◽  
Masahiko Kondow ◽  
Kazuhisa Uomi ◽  
Toshiaki Tanaka
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Characteristic Temperature ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Laser

Improved Characteristic Temperature (TO) of a 1.3-μm GaInNAs/GaAs Single-Quantum-Well Laser Diode Through Thermal Annealing

1999 ◽  
Vol 597 ◽  
Author(s):  
T. Kitatani ◽  
M. Kondow ◽  
K. Nakahara ◽  
K. Uomi ◽  
T. Tanaka
Keyword(s):  
Quantum Well ◽  
Thermal Annealing ◽  
Laser Diode ◽  
Continuous Wave ◽  
Characteristic Temperature ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Lasing Wavelength ◽  
Quantum Well Laser ◽  
Continuous Wave Operation

AbstractThrough optimal thermal annealing of the active region of a 1.3 μm GaInNAs/GaAs single-quantum-well laser diode, we obtained a characteristic temperature (T0) of 215 K under pulsed operation from 20°C to 80°C. This is the highest yet reported value for a 1.3-μm semiconductor laser. Even under continuous-wave operation, the T0 was as high as 147 K. The lasing-wavelength change with temperature was as small as 0.39 nm/°C, indicating the excellent stability for a GalnNAs laser diode with T0 of over 200 K. These results demonstrate that GaInNAs is a promising material for fabricating long-wavelength laser diodes used for opticalfiber communications.

Low‐threshold (≤ 92 A/cm2) 1.6 μm strained‐layer single quantum well laser diodes optically pumped by a 0.8 μm laser diode

1990 ◽  
Vol 57 (16) ◽  
pp. 1608-1609 ◽  
Author(s):  
C. E. Zah ◽  
R. Bhat ◽  
K. W. Cheung ◽  
N. C. Andreadakis ◽  
F. J. Favire ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Laser Diodes ◽  
Single Quantum ◽  
Optically Pumped ◽  
Single Quantum Well ◽  
Strained Layer ◽  
Quantum Well Laser ◽  
Low Threshold
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