scholarly journals Spin injection from Co2MnGa into an InGaAs quantum well

2008 ◽  
Vol 92 (23) ◽  
pp. 232101 ◽  
Author(s):  
M. C. Hickey ◽  
C. D. Damsgaard ◽  
S. N. Holmes ◽  
I. Farrer ◽  
G. A. C. Jones ◽  
...  
Keyword(s):  
Quantum Well ◽  
Spin Injection ◽  
Ingaas Quantum Well

Highly polarized emission from electrical spin injection into an InGaAs quantum well with free carriers

2013 ◽  
Vol 103 (21) ◽  
pp. 212403 ◽  
Author(s):  
C. H. Li ◽  
G. Kioseoglou ◽  
A. Petrou ◽  
M. Korkusinski ◽  
P. Hawrylak ◽  
...  
Keyword(s):  
Quantum Well ◽  
Spin Injection ◽  
Free Carriers ◽  
Polarized Emission ◽  
Electrical Spin ◽  
Ingaas Quantum Well

scholarly journals Spin injection between epitaxial Co2.4Mn1.6Ga and an InGaAs quantum well

2005 ◽  
Vol 86 (25) ◽  
pp. 252106 ◽  
Author(s):  
M. C. Hickey ◽  
C. D. Damsgaard ◽  
I. Farrer ◽  
S. N. Holmes ◽  
A. Husmann ◽  
...  
Keyword(s):  
Quantum Well ◽  
Spin Injection ◽  
Ingaas Quantum Well

scholarly journals Experimental and Modeling Study on the High-Performance p++-GaAs/n++-GaAs Tunnel Junctions with Silicon and Tellurium Co-Doped InGaAs Quantum Well Inserted

Crystals ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1092
Author(s):  
Yudan Gou ◽  
Jun Wang ◽  
Yang Cheng ◽  
Yintao Guo ◽  
Xiao Xiao ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Performance ◽  
High Efficiency ◽  
Tunnel Junctions ◽  
Peak Current Density ◽  
Co Doping ◽  
Trap Assisted Tunneling ◽  
Carrier Tunneling ◽  
High Concentrations ◽  
Ingaas Quantum Well

The development of high-performance tunnel junctions is critical for achieving high efficiency in multi-junction solar cells (MJSC) that can operate at high concentrations. We investigate silicon and tellurium co-doping of InGaAs quantum well inserts in p++-GaAs/n++-GaAs tunnel junctions and report a peak current density as high as 5839 A cm−2 with a series resistance of 5.86 × 10−5 Ω cm2. In addition, we discuss how device performance is affected by the growth temperature, thickness, and V/III ratio in the InGaAs layer. A simulation model indicates that the contribution of trap-assisted tunneling enhances carrier tunneling.

scholarly journals 830-nm InGaAs Quantum Well Lasers With Very Low Beam Divergence

2017 ◽  
Vol 9 (5) ◽  
pp. 1-8
Author(s):  
Bocang Qiu ◽  
Hai Martin Hu ◽  
Weimin Wang ◽  
James Ho ◽  
Wenbin Liu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Beam Divergence ◽  
Ingaas Quantum Well

Hybrid InGaAs quantum well–dots nanostructures for light-emitting and photo-voltaic applications

2015 ◽  
Vol 26 (38) ◽  
pp. 385202 ◽  
Author(s):  
S A Mintairov ◽  
N A Kalyuzhnyy ◽  
V M Lantratov ◽  
M V Maximov ◽  
A M Nadtochiy ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting ◽  
Photo Voltaic ◽  
Ingaas Quantum Well

GaAs‐InGaAs quantum‐well resonant‐tunneling switching device grown by molecular beam epitaxy

1994 ◽  
Vol 64 (20) ◽  
pp. 2685-2687 ◽  
Author(s):  
Wen‐Chau Liu ◽  
Der‐Feng Guo ◽  
Shiuh‐Ren Yih ◽  
Jing‐Tong Liang ◽  
Lih‐Wen Liah ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Resonant Tunneling ◽  
Molecular Beam ◽  
Switching Device ◽  
Ingaas Quantum Well

InGaAs quantum well-dots based GaAs subcell with enhanced photocurrent for multijunction GaInP/GaAs/Ge solar cells

2016 ◽  
Vol 32 (1) ◽  
pp. 015006 ◽  
Author(s):  
S A Mintairov ◽  
N A Kalyuzhnyy ◽  
M V Maximov ◽  
A M Nadtochiy ◽  
A E Zhukov
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Ingaas Quantum Well
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