Low-temperature inelastic collisions between hydrogen molecules and helium atoms

2008 ◽  
Vol 128 (22) ◽  
pp. 224308 ◽  
Author(s):  
G. Tejeda ◽  
F. Thibault ◽  
J. M. Fernández ◽  
S. Montero
Keyword(s):  
Low Temperature ◽  
Inelastic Collisions ◽  
Helium Atoms ◽  
Hydrogen Molecules

Inelastic collisions between hydrogen and helium atoms

1967 ◽  
Vol 90 (1) ◽  
pp. 73-80 ◽  
Author(s):  
D R Bates ◽  
D S F Crothers
Keyword(s):  
Inelastic Collisions ◽  
Helium Atoms

Investigation of rotational state-changing collisions of C2N− ions with helium

2019 ◽  
Vol 15 (S350) ◽  
pp. 443-444
Author(s):  
Jan Franz ◽  
Francesco Antonio Gianturco
Keyword(s):  
Dipole Moment ◽  
Potential Energy ◽  
Potential Energy Surface ◽  
Cross Sections ◽  
Energy Surface ◽  
Inelastic Collisions ◽  
Atomic Gases ◽  
Molecular Anion ◽  
Helium Atoms ◽  
Molecular Anions

AbstractThe cross sections for rotational inelastic collisions between atoms and a molecular anion can be very large, if the anion has a dipole moment. This makes molecular anions very efficient in cooling atomic gases. We address rotational inelastic collisions of Helium atoms with the molecular anion C2N–. Here we present preliminary calculations of the potential energy surface.

Layer Transfer of Hydrogen-Implanted Silicon Wafers by Thermal-Microwave Co-Activation

2006 ◽  
Vol 913 ◽  
Author(s):  
Y. Y. Yang ◽  
C. H. Huang ◽  
Y. -K. Hsu ◽  
S. -J. Jeng ◽  
C. -C. Tai ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Silicon On Insulator ◽  
Hydrogen Ions ◽  
Silicon Thin Film ◽  
Projected Range ◽  
Hydrogen Molecules ◽  
Bonded Interface ◽  
Hydrogen Implantation ◽  
Short Time

AbstractSilicon on insulator (SOI) substrate is a key materials for nano-scaling IC device and the requirement for its crystal structure and quality is really high. Nanothick silicon thin film can be transferred onto a handle wafer from a donation wafer to form a SOI wafer after this process including hydrogen implantation of donation wafer, wafer bonding, and thermal treatment at moderately high temperatures of 400 to 600 degree centigrade. The expansion of the hydrogen molecular evolving from the implanted hydrogen ions interacting with silicon dangling bonds and trapped inside the microcavities located near the ion projected range resulted in exfoliation of the silicon thin film in the final heating step. The hydrogen molecules inside the microcavities tend to expand along the bonded interface rather than radially to form individual blisters. Finally, the fracture failure of ion implanted area parallel to the bonded interface near the projected ion range is formed by the sideway expansion of the cavities due to the diffusion supply of implanted hydrogen excited by thermal energy. Microwave processing can lower the activity energy to speed the chemical reaction so that it leads the format of microcavities occurring at low temperature by directly exciting the implanted hydrogen ions by microwave energy and also results in decreasing the critical dosage for layer splitting. However, microwave irradiation alone at room temperature causes the formation of lots of nucleus sites of micro-voids filled by hydrogen molecule which is immobility in silicon resulting in the issue of uniformity of transferred layer. In this study, the hydrogen implanted silicon substrate was irradiated by microwave at low temperature (200 degree centigrade) rather than microwave alone to co-activate the implanted hydrogen ions in silicon to increase not only kinetic energy but also mobility to successfully achieve a completely transferred layer in a short time.

scholarly journals Rotational excitation of formaldehyde by hydrogen molecules: ortho-H2CO at low temperature

2008 ◽  
Vol 493 (2) ◽  
pp. 687-696 ◽  
Author(s):  
N. Troscompt ◽  
A. Faure ◽  
L. Wiesenfeld ◽  
C. Ceccarelli ◽  
P. Valiron
Keyword(s):  
Low Temperature ◽  
Rotational Excitation ◽  
Hydrogen Molecules

ORTHO-PARA HYDROGEN CONVERSION ON METAL SURFACES

1991 ◽  
Vol 05 (18) ◽  
pp. 1191-1198 ◽  
Author(s):  
E. ILISCA
Keyword(s):  
Charge Transfer ◽  
Low Temperature ◽  
Metal Surfaces ◽  
Noble Metals ◽  
Large Family ◽  
Para Hydrogen ◽  
Electron Hole ◽  
Efficient Mechanism ◽  
Hydrogen Molecules ◽  
Metal Electron

EELS experiments of H 2 absorbed at low temperature on Noble Metals have indicated that the o-p H 2 conversion can be very fast on metals, even in absence of chemisorption, in contradiction with the usual belief that the catalyst must be magnetic to be efficient. We examine a large family of processes which convert the hydrogen molecules on the basis of the emission of metal electron-hole pairs. The most efficient mechanism found is the Coulomb-Contact one based on a virtual charge transfer, back and forth, from the metal to the molecule, having a rate in agreement with experiment.

Rotational excitation of hydrogen molecules in low temperature plasmas

2009 ◽  
Vol 16 (3) ◽  
pp. 033504 ◽  
Author(s):  
T. Shikama ◽  
S. Kado ◽  
K. Kurihara ◽  
Y. Kuwahara
Keyword(s):  
Low Temperature ◽  
Rotational Excitation ◽  
Hydrogen Molecules ◽  
Low Temperature Plasmas

EFFECTIVE POTENTIAL FOR TWO-BODY INTERACTIONS

1990 ◽  
Vol 04 (13) ◽  
pp. 2005-2023 ◽  
Author(s):  
RUGGERO VAIA ◽  
VALERIO TOGNETTI
Keyword(s):  
Correlation Function ◽  
Effective Potential ◽  
Pair Correlation Function ◽  
Pair Correlation ◽  
Body System ◽  
Characteristic Parameters ◽  
Helium Atoms ◽  
Lennard Jones ◽  
Hydrogen Molecules ◽  
Exact Data

A new kind of effective potential, which permits the calculation of the quantum equilibrium averages of configuration dependent observables in a classical-like way, is used for calculating the quantum pair correlation function of a two-body system. The main feature of this effective potential is the capability to fully account for the quantum harmonic effects, so it proves much more efficient than the analogous one defined by the Wigner expansion. Applications and comparisons with exact data are made for the Lennard-Jones interaction, with the characteristic parameters of helium atoms and hydrogen molecules.

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