Metal-semiconductor-metal photodetectors based on single-walled carbon nanotube film–GaAs Schottky contacts

2008 ◽  
Vol 103 (11) ◽  
pp. 114315 ◽  
Author(s):  
Ashkan Behnam ◽  
Jason Johnson ◽  
Yongho Choi ◽  
Leila Noriega ◽  
M. Günhan Ertosun ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Schottky Contacts ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Carbon Nanotube Film ◽  
Metal Semiconductor Metal

Metal-Semiconductor-Metal (MSM) Photodetectors Based on Single-walled Carbon Nanotube Film-GaAs Schottky Contacts

2007 ◽  
Vol 1057 ◽  
Author(s):  
Jason L. Johnson ◽  
Ashkan Behnam ◽  
Yongho Choi ◽  
Leila Noriega ◽  
Gunhan Ertosun ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Dark Current ◽  
Thermionic Emission ◽  
Schottky Contacts ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Carbon Nanotube Film ◽  
Metal Semiconductor Metal ◽  
Control Devices ◽  
Msm Photodetectors

ABSTRACTWe experimentally study the dark and photocurrent in metal-semiconductor-metal (MSM) photodetectors based on single-walled carbon nanotube film Schottky contacts on GaAs. We find that above ∼260°K, thermionic emission of electrons with a barrier height of ∼0.54 eV is the dominant dark current transport mechanism. Furthermore, MSM devices with CNT film electrodes exhibit a higher photocurrent-to-dark current ratio while maintaining a comparable responsivity relative to control devices. This work demonstrates that nanotube films can be integrated as Schottky electrodes in conventional semiconductor optoelectronic devices.

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