Prepassivation surface treatment effects on pulsed and dc I-V performance of AlGaN∕GaN high-electron-mobility transistors

David J. Meyer; Joseph R. Flemish; Joan M. Redwing

doi:10.1063/1.2928236

Prepassivation surface treatment effects on pulsed and dc I-V performance of AlGaN∕GaN high-electron-mobility transistors

Applied Physics Letters ◽

10.1063/1.2928236 ◽

2008 ◽

Vol 92 (19) ◽

pp. 193505 ◽

Cited By ~ 5

Author(s):

David J. Meyer ◽

Joseph R. Flemish ◽

Joan M. Redwing

Keyword(s):

Surface Treatment ◽

Electron Mobility ◽

Treatment Effects ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Current collapse reduction in InAlGaN/GaN high electron mobility transistors by surface treatment of thermally stable ultrathin in situ SiN passivation

Solid-State Electronics ◽

10.1016/j.sse.2013.09.001 ◽

2013 ◽

Vol 89 ◽

pp. 207-211 ◽

Cited By ~ 8

Author(s):

A. Alexewicz ◽

M. Alomari ◽

D. Maier ◽

H. Behmenburg ◽

C. Giesen ◽

...

Keyword(s):

Surface Treatment ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Thermally Stable ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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Surface Treatment, Fabrication, and Performances of GaN-Based Metal–Oxide–Semiconductor High-Electron Mobility Transistors

Nano-Semiconductors ◽

10.1201/9781315217468-22 ◽

2018 ◽

pp. 429-474

Keyword(s):

Metal Oxide ◽

Surface Treatment ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Improvement of Current Collapse by Surface Treatment and Passivation Layer in p-GaN Gate GaN High-Electron-Mobility Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.04cf08 ◽

2013 ◽

Vol 52 (4S) ◽

pp. 04CF08 ◽

Cited By ~ 12

Author(s):

Takashi Katsuno ◽

Masakazu Kanechika ◽

Kenji Itoh ◽

Koichi Nishikawa ◽

Tsutomu Uesugi ◽

...

Keyword(s):

Surface Treatment ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Passivation Layer ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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High Voltage AlGaN/GaN High-Electron-Mobility Transistors Employing Surface Treatment by Deposition and Removal of Silicon Dioxide Layer

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04df06 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DF06 ◽

Cited By ~ 1

Author(s):

Young-Hwan Choi ◽

Sun-Jae Kim ◽

Young-Shil Kim ◽

Min-Ki Kim ◽

Ogyun Seok ◽

...

Keyword(s):

Silicon Dioxide ◽

Surface Treatment ◽

High Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Silicon Dioxide Layer ◽

High Electron Mobility ◽

Electron Mobility Transistors

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AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with ZnO gate layer and (NH4)2Sx surface treatment

Applied Physics Letters ◽

10.1063/1.3467056 ◽

2010 ◽

Vol 97 (3) ◽

pp. 032107 ◽

Cited By ~ 21

Author(s):

Ya-Lan Chiou ◽

Chi-Sen Lee ◽

Ching-Ting Lee

Keyword(s):

Metal Oxide ◽

Surface Treatment ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Gate Layer

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Reduction of Current Collapse in GaN High-Electron Mobility Transistors Using a Repeated Ozone Oxidation and Wet Surface Treatment

IEEE Electron Device Letters ◽

10.1109/led.2015.2445495 ◽

2015 ◽

Vol 36 (8) ◽

pp. 757-759 ◽

Cited By ~ 6

Author(s):

Shuxun Lin ◽

Maojun Wang ◽

Bing Xie ◽

Cheng P. Wen ◽

Min Yu ◽

...

Keyword(s):

Surface Treatment ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Ozone Oxidation ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse ◽

Wet Surface

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Effective surface treatment for GaN metal–insulator–semiconductor high-electron-mobility transistors using HF plus N2plasma prior to SiN passivation

Japanese Journal of Applied Physics ◽

10.7567/jjap.55.01ad06 ◽

2015 ◽

Vol 55 (1S) ◽

pp. 01AD06 ◽

Cited By ~ 1

Author(s):

Shih-Chien Liu ◽

Hai-Dang Trinh ◽

Gu-Ming Dai ◽

Chung-Kai Huang ◽

Chang-Fu Dee ◽

...

Keyword(s):

Surface Treatment ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Effective Surface ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Electron Mobility Transistors

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Off-state leakage current reduction in AlGaN/GaN high electron mobility transistors by combining surface treatment and post-gate annealing

Semiconductor Science and Technology ◽

10.1088/0268-1242/31/5/055019 ◽

2016 ◽

Vol 31 (5) ◽

pp. 055019 ◽

Cited By ~ 10

Author(s):

Xing Lu ◽

Huaxing Jiang ◽

Chao Liu ◽

Xinbo Zou ◽

Kei May Lau

Keyword(s):

Surface Treatment ◽

Leakage Current ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Reduction

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Study of an Al2O3/GaN Interface for Normally Off MOS-Channel High-Electron-Mobility Transistors Using XPS Characterization: The Impact of Wet Surface Treatment on Threshold Voltage VTH

ACS Applied Electronic Materials ◽

10.1021/acsaelm.0c01023 ◽

2021 ◽

Author(s):

Laura Vauche ◽

Antoine Chanuel ◽

Eugénie Martinez ◽

Marie-Christine Roure ◽

Cyrille Le Royer ◽

...

Keyword(s):

Surface Treatment ◽

Threshold Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Xps Characterization ◽

Wet Surface ◽

The Impact

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Effects of N2O surface treatment on the electrical properties of the InAlN/GaN high electron mobility transistors

Journal of Physics D Applied Physics ◽

10.1088/1361-6463/ab5728 ◽

2019 ◽

Vol 53 (6) ◽

pp. 065103

Author(s):

Peng Cui ◽

Jie Zhang ◽

Tzu-Yi Yang ◽

Hang Chen ◽

Haochen Zhao ◽

...

Keyword(s):

Electrical Properties ◽

Surface Treatment ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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