Atomic assembly during ion-beam assisted growth: Kinetic modeling

2008 ◽  
Vol 103 (11) ◽  
pp. 114904 ◽  
Author(s):  
Yu. V. Trushin ◽  
D. V. Kulikov ◽  
K. L. Safonov ◽  
J. W. Gerlach ◽  
Th. Höche ◽  
...  
Keyword(s):  
Kinetic Modeling ◽  
Growth Kinetic ◽  
Ion Beam

scholarly journals Improved yield and control of spectra from high-intensity laser-generated neutron beams

2018 ◽  
Vol 36 (1) ◽  
pp. 15-21 ◽  
Author(s):  
Brian J. Albright ◽  
Lin Yin ◽  
Andrea Favalli
Keyword(s):  
Kinetic Modeling ◽  
State Of The Art ◽  
Ion Beam ◽  
Fourfold Increase ◽  
Neutron Spectra ◽  
Neutron Interrogation ◽  
Solid Density ◽  
High Intensity Laser ◽  
And Control ◽  
Intensity Laser

AbstractKinetic modeling of laser-ion beam generation from the “break-out afterburner” (BOA) has been modeled for several deuteron-rich solid-density target foils. Modeling the transport of these beams in a beryllium converter shows as much as a fourfold increase in neutron yield over the present state of the art through the use of alternative target materials. Additionally, species-separation dynamics during the BOA can be exploited to control the hardness of the neutron spectra, of interest for, for example, enhancing penetrability in shielded material in active neutron interrogation settings.

scholarly journals Direct Observation of Aggregative Nanoparticle Growth: Kinetic Modeling of the Size Distribution and Growth Rate

2014 ◽  
Vol 20 (S3) ◽  
pp. 1612-1613
Author(s):  
Taylor J. Woehl ◽  
Chiwoo Park ◽  
James E. Evans ◽  
Ilke Arslan ◽  
William D. Ristenpart ◽  
...  
Keyword(s):  
Growth Rate ◽  
Size Distribution ◽  
Direct Observation ◽  
Kinetic Modeling ◽  
Growth Kinetic ◽  
Nanoparticle Growth

Direct Observation of Aggregative Nanoparticle Growth: Kinetic Modeling of the Size Distribution and Growth Rate

Nano Letters ◽  
2013 ◽  
Vol 14 (1) ◽  
pp. 373-378 ◽  
Author(s):  
Taylor J. Woehl ◽  
Chiwoo Park ◽  
James E. Evans ◽  
Ilke Arslan ◽  
William D. Ristenpart ◽  
...  
Keyword(s):  
Growth Rate ◽  
Size Distribution ◽  
Direct Observation ◽  
Kinetic Modeling ◽  
Growth Kinetic ◽  
Nanoparticle Growth

Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

Effects of Ion Beam Milling on Surface Topography

1973 ◽  
Vol 31 ◽  
pp. 84-85
Author(s):  
P.G. Pawar ◽  
P. Duhamel ◽  
G.W. Monk
Keyword(s):  
Surface Topography ◽  
Ion Beam ◽  
Solid Material ◽  
Beam Current ◽  
Atomic Mass ◽  
Micro Milling ◽  
Ion Milling ◽  
Controlled Atmospheres ◽  
Milling Operations ◽  
Sufficient Energy

A beam of ions of mass greater than a few atomic mass units and with sufficient energy can remove atoms from the surface of a solid material at a useful rate. A system used to achieve this purpose under controlled atmospheres is called an ion miliing machine. An ion milling apparatus presently available as IMMI-III with a IMMIAC was used in this investigation. Unless otherwise stated, all the micro milling operations were done with Ar+ at 6kv using a beam current of 100 μA for each of the two guns, with a specimen tilt of 15° from the horizontal plane.It is fairly well established that ion bombardment of the surface of homogeneous materials can produce surface topography which resembles geological erosional features.

Nucleation and Early Growth of Sputtered thin Films

1970 ◽  
Vol 28 ◽  
pp. 516-517
Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Water Cooling ◽  
Stages Of Growth ◽  
Lens Assembly ◽  
Microscope Technique ◽  
Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

SEM analysis of DC magnetron sputtered beryllium films

1988 ◽  
Vol 46 ◽  
pp. 960-961
Author(s):  
E. F. Lindsey ◽  
C. W. Price ◽  
E. L. Pierce ◽  
E. J. Hsieh
Keyword(s):  
Fine Structure ◽  
Electron Emission ◽  
Secondary Electron ◽  
Low Voltage ◽  
Ion Beam ◽  
Secondary Electron Emission ◽  
Sem Analysis ◽  
Fused Silica ◽  
Grain Structure ◽  
Silica Substrate

Columnar structures produced by DC magnetron sputtering can be altered by using RF biased sputtering or by exposing the film to nitrogen pulses during sputtering, and these techniques are being evaluated to refine the grain structure in sputtered beryllium films deposited on fused silica substrates. Beryllium is brittle, and fractures in sputtered beryllium films tend to be intergranular; therefore, a convenient technique to analyze grain structure in these films is to fracture the coated specimens and examine them in an SEM. However, fine structure in sputtered deposits is difficult to image in an SEM, and both the low density and the low secondary electron emission coefficient of beryllium seriously compound this problem. Secondary electron emission can be improved by coating beryllium with Au or Au-Pd, and coating also was required to overcome severe charging of the fused silica substrate even at low voltage. The coating structure can obliterate much of the fine structure in beryllium films, but reasonable results were obtained by using the high-resolution capability of an Hitachi S-800 SEM and either ion-beam coating with Au-Pd or carbon coating by thermal evaporation.

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