A terahertz quantum cascade laser grown by low-pressure metalorganic vapor phase epitaxy

2008 ◽  
Vol 92 (18) ◽  
pp. 181111 ◽  
Author(s):  
Lorenzo Sirigu ◽  
Alok Rudra ◽  
Eli Kapon ◽  
Maria I. Amanti ◽  
Giacomo Scalari ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Quantum Cascade Laser ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Quantum Cascade

scholarly journals Photoluminescence and Raman spectroscopies as an optical approach of stress determining in MOVPE grown quantum cascade laser structures

2020 ◽  
Vol 50 (2) ◽  
Author(s):  
Adriana Łozińska ◽  
Mikołaj Badura ◽  
Joanna Jadczak ◽  
Katarzyna Bielak ◽  
Beata Ściana
Keyword(s):  
Vapor Phase ◽  
Quantum Cascade Laser ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Thin Layers ◽  
Raman Shift ◽  
Quantum Cascade

In the presented work, an optical approach of stress determining in metalorganic vapor phase epitaxy (MOVPE) grown quantum cascade laser (QCL) structures was reported. In the case of such sophisticated structures containing hundreds of thin layers, it is important to minimize the stress generated in the QCL core. Techniques enabling determination of stress in such thin layers as those described in the article are photoluminescence and Raman spectroscopies. Based on Raman shift or changes in photoluminescence signal, it is possible to analyze stress occurring in the structure.

Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy

2011 ◽  
Vol 50 (9) ◽  
pp. 095502 ◽  
Author(s):  
Yuki Shimahara ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu ◽  
Fumitsugu Fukuyo ◽  
Tomoyuki Okada ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Si Doped

Optical properties of very narrow GaInAs/InP quantum wells grown by low‐pressure metalorganic vapor phase epitaxy

1988 ◽  
Vol 52 (11) ◽  
pp. 872-873 ◽  
Author(s):  
D. Grützmacher ◽  
K. Wolter ◽  
H. Jürgensen ◽  
P. Balk ◽  
C. W. T. Bulle Lieuwma
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

The effect of the Si/N treatment of a nitridated sapphire surface on the growth mode of GaN in low-pressure metalorganic vapor phase epitaxy

1998 ◽  
Vol 73 (9) ◽  
pp. 1278-1280 ◽  
Author(s):  
S. Haffouz ◽  
H. Lahrèche ◽  
P. Vennéguès ◽  
P. de Mierry ◽  
B. Beaumont ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Growth Mode ◽  
Sapphire Surface ◽  
N Treatment

Fabrication of GaN with Buried Tungsten (W) Structures Using Epitaxial Lateral Overgrowth (ELO) via LP-MOVPE

1999 ◽  
Vol 595 ◽  
Author(s):  
Hideto Miyake ◽  
Motoo Yamaguchi ◽  
Masahiro Haino ◽  
Atsushi Motogaito ◽  
Kazumasa Hiramatsu ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Catalytic Effect ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Epitaxial Lateral Overgrowth ◽  
Severe Damage ◽  
Metal Mask ◽  
Lateral Overgrowth ◽  
Window Region

AbstractA buried tungsten (W) mask structure with GaN is successfully obtained by epitaxial lateral overgrowth (ELO) technique via low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The selectivity of GaN growth on the window region vs. the mask region is good. An underlying GaN with a striped W metal mask is easily decomposed above 500 °C by the W catalytic effect, by which radical hydrogen is reacted with GaN. It is difficult to bury the W mask because severe damage occurs in the GaN epilayer under the mask. It is found that an underlying AlGaN/GaN layer with a narrow W stripe mask width (mask/window = 2/2 νm) leads the ELO GaN layer to be free from damage, resulting in an excellent W-buried structure.

Composition profile of an AlGaAs epilayer on a V‐grooved substrate grown by low‐pressure metalorganic vapor phase epitaxy

1995 ◽  
Vol 67 (7) ◽  
pp. 959-961 ◽  
Author(s):  
Wugen Pan ◽  
Hiroyuki Yaguchi ◽  
Kentaro Onabe ◽  
Ryoichi Ito ◽  
Yasuhiro Shiraki
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Composition Profile
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