Spin-polarized current and spin accumulation in a three-terminal two quantum dots ring

2008 ◽  
Vol 92 (17) ◽  
pp. 172104 ◽  
Author(s):  
Feng Chi ◽  
Jun Zheng ◽  
Lian-Liang Sun
Keyword(s):  
Quantum Dots ◽  
Spin Accumulation ◽  
Spin Polarized

scholarly journals Chiral Magneto-Electrochemistry

2018 ◽  
Vol 4 (3) ◽  
pp. 36 ◽  
Author(s):  
Anup Kumar ◽  
Prakash Mondal ◽  
Claudio Fontanesi
Keyword(s):  
Magnetic Field ◽  
Experimental Studies ◽  
Spin Accumulation ◽  
Chiral Molecules ◽  
Electrochemical System ◽  
Ferromagnetic Electrodes ◽  
Spin Polarized ◽  
The Magnetic Field ◽  
Research Domain

Magneto-electrochemistry (MEC) is a unique paradigm in science, where electrochemical experiments are carried out as a function of an applied magnetic field, creating a new horizon of potential scientific interest and technological applications. Over time, detailed understanding of this research domain was developed to identify and rationalize the possible effects exerted by a magnetic field on the various microscopic processes occurring in an electrochemical system. Notably, until a few years ago, the role of spin was not taken into account in the field of magneto-electrochemistry. Remarkably, recent experimental studies reveal that electron transmission through chiral molecules is spin selective and this effect has been referred to as the chiral-induced spin selectivity (CISS) effect. Spin-dependent electrochemistry originates from the implementation of the CISS effect in electrochemistry, where the magnetic field is used to obtain spin-polarized currents (using ferromagnetic electrodes) or, conversely, a magnetic field is obtained as the result of spin accumulation.

Effective modulation of spin accumulation using a ferromagnetic/nonmagnetic bilayer spin channel

2021 ◽  
Author(s):  
Taisei Ariki ◽  
Tatsuya Nomura ◽  
Kohei Ohnishi ◽  
Takashi Kimura
Keyword(s):  
Spin Injection ◽  
Spin Valve ◽  
Transverse Spin ◽  
Spin Accumulation ◽  
Spin Channel ◽  
Relative Angle ◽  
Channel Layer ◽  
Spin Polarized ◽  
Resistance Model ◽  
Large Spin

Abstract A lateral spin valve consisting of highly spin-polarized CoFeAl electrodes with a CoFeAl/Cu bilayer spin channel has been developed. Despite a large spin absorption into the CoFeAl capping channel layer, an efficient spin injection and detection using the CoFeAl electrodes enable us to observe a clear spin valve signal. We demonstrate that the nonlocal spin accumulation signal is significantly modulated depending on the relative angle of the magnetizations between the spin injector and absorber. The observed modulation phenomena is explained by the longitudinal and transverse spin absorption effects into the CoFeAl channel layer with the spin resistance model.

Spin-polarized transport through the T-shaped double quantum dots

2008 ◽  
Vol 17 (4) ◽  
pp. 1383-1388 ◽  
Author(s):  
Yang Fu-Bin ◽  
Wu Shao-Quan ◽  
Yan Cong-Hua ◽  
Huang Rui ◽  
Hou Tao ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Double Quantum ◽  
Double Quantum Dots ◽  
Spin Polarized ◽  
Polarized Transport ◽  
Spin Polarized Transport

1-BIT FULL ADDER IMPLEMENTATION USING SINGLE SPIN LOGIC PARADIGM

SPIN ◽  
2012 ◽  
Vol 02 (02) ◽  
pp. 1250012 ◽  
Author(s):  
SOUMITRA SHUKLA ◽  
BAHNIMAN GHOSH ◽  
MOHAMMAD WASEEM AKRAM
Keyword(s):  
Quantum Dots ◽  
Scanning Tunneling Microscopy ◽  
Full Adder ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Single Spin ◽  
Transmission Gate ◽  
Spin Logic ◽  
Spin Polarized ◽  
Fair Comparison

This paper presents the implementation of important full adder circuits using quantum dots (QDs) and Spin Polarized Scanning Tunneling Microscopy (SPSTM) in Single Spin Logic (SSL) paradigm. A fair comparison among these adders shows that the mirror adder implementation in SSL paradigm does not carry any advantage over the CMOS adder in terms of complexity and number of QDs, opposite to the trend observed in their charge-based counterparts. On the contrary, the transmission gate adder, static and dynamic Manchester carry gate adders in SSL reduces the complexity and number of QDs, in harmony with the trend shown in transistor adders.

scholarly journals Spin-polarized conductance in double quantum dots: Interplay of Kondo, Zeeman, and interference effects

2013 ◽  
Vol 87 (20) ◽  
Author(s):  
Luis G. G. V. Dias da Silva ◽  
E. Vernek ◽  
K. Ingersent ◽  
N. Sandler ◽  
S. E. Ulloa
Keyword(s):  
Quantum Dots ◽  
Double Quantum ◽  
Interference Effects ◽  
Double Quantum Dots ◽  
Spin Polarized

Electrical injection of spin-polarized electrons into single quantum dots

2009 ◽  
Vol 246 (4) ◽  
pp. 788-790
Author(s):  
T. Kümmell ◽  
R. Arians ◽  
J. Huang ◽  
J. Wenisch ◽  
K. Brunner ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Single Quantum ◽  
Polarized Electrons ◽  
Spin Polarized ◽  
Single Quantum Dots ◽  
Electrical Injection
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