Low leakage current and enhanced ferroelectric properties of Ti and Zn codoped BiFeO3 thin film

2008 ◽  
Vol 92 (19) ◽  
pp. 192905 ◽  
Author(s):  
G. D. Hu ◽  
S. H. Fan ◽  
C. H. Yang ◽  
W. B. Wu
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Ferroelectric Properties ◽  
Bifeo3 Thin Film ◽  
Low Leakage ◽  
Low Leakage Current

Low leakage current and good ferroelectric properties of SrBi2(Ta0.7Nb0.3)2O9–Bi3TiTaO9 solid solution thin film

2001 ◽  
Vol 79 (13) ◽  
pp. 2067-2069 ◽  
Author(s):  
Masatoshi Mitsuya ◽  
Norimasa Nukaga ◽  
Takayuki Watanabe ◽  
Hiroshi Funakubo ◽  
Keisuke Saito ◽  
...  
Keyword(s):  
Thin Film ◽  
Solid Solution ◽  
Leakage Current ◽  
Ferroelectric Properties ◽  
Low Leakage ◽  
Low Leakage Current

High k PVP titanium dioxide composite dielectric with low leakage current for thin film transistor

2021 ◽  
pp. 106413
Author(s):  
Yuexin Yang ◽  
Zhuohui Xu ◽  
Tian Qiu ◽  
Honglong Ning ◽  
Jinyao Zhong ◽  
...  
Keyword(s):  
Thin Film ◽  
Titanium Dioxide ◽  
Leakage Current ◽  
Thin Film Transistor ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High K

REDUCED LEAKAGE CURRENT AND ENHANCED MAGNETIC PROPERTIES OF (Bi,Nd)FeO3 THIN FILMS GROWN ON (Ba,Sr)TiO3 BOTTOM LAYER

2012 ◽  
Vol 05 (03) ◽  
pp. 1250032 ◽  
Author(s):  
C. B. MA ◽  
X. G. TANG ◽  
D. G. CHEN ◽  
Q. X. LIU ◽  
Y. P. JIANG ◽  
...  
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Room Temperature ◽  
Bottom Electrode ◽  
Coupling Reaction ◽  
Bottom Layer ◽  
Rf Magnetron Sputtering ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Multiferroic Heterostructure

A multiferroic heterostructure composed of ( Bi 0.875 Nd 0.125) FeO 3 (BNF) are grown on ( Ba 0.65 Sr 0.35) TiO 3(BST) buffered Pt/Ti/SiO2/Si(100) substrate by rf-magnetron sputtering. The heterostructure BNF/BST exhibits a quite low leakage current (3.7 × 10-7 A/cm2 at 300 kV/cm) and dielectric loss (0.0036 at 100 kHz) at room temperature. The saturated magnetization and the coercive field of the BST/BNF heterostructure are 37.7 emu/cm3 and 357.6 Oe, respectively. The low leakage current owed to the action of BST in the charge transfer between BNF and the bottom electrode, the coupling reaction between BST and BNF films. And the better crystallization in BNF/BST heterostructure thin film lead to the ferromagnetic properties enhanced.

scholarly journals Low Dielectric Loss and Multiferroic Properties in Ferroelectric/Mutiferroic/Ferroelectric Sandwich Structured Thin Films

Coatings ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 502
Author(s):  
Zhi-Yong Wu ◽  
Cai-Bin Ma
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Room Temperature ◽  
Bismuth Ferrite ◽  
Ferroelectric Properties ◽  
Rf Sputtering ◽  
Low Dielectric ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Electronic Field

Bismuth ferrite (BiFeO3) has proven to be promising for a wide variety of microelectric and magnetoelectric devices applications. In this work, a dense (Ba0.65Sr0.35)TiO3(BST)/(Bi0.875Nd0.125)FeO3(BNF)/BST trilayered thin film grown on Pt-coated Si (100) substrates was developed by the rf-sputtering. For comparison, single-layered BNF and BST were also prepared on the same substrates, respectively. The results show that the dielectric loses suppression in BST/BNF/BST trilayered thin films at room temperature but has enhanced ferromagnetic and ferroelectric properties. The remnant polarization (Pr) and coercive electronic field (Ec) were 5.51 μC/cm2 and 18.3 kV/cm, and the remnant magnetization (Mr) and coercive magnetic field (Hc) were 10.1 emu/cm3 and 351 Oe, respectively, for the trilayered film. We considered that the bismuth’s volatilization was limited by BST bottom layers making the Bi/Fe in good station, and the action of BST layer in the charge transfer between BNF thin film and electrode led to the quite low leakage current and enhanced multiferroic property. The origin of the mechanism of the highly enhanced dielectric constant and decreased loss tanδ was discussed.

Low Leakage Current Vertical Thin-Film Transistors With InSnO-Stabilized ZnO Channel

2020 ◽  
Vol 41 (2) ◽  
pp. 248-251
Author(s):  
Xuemei Yin ◽  
Sunbin Deng ◽  
Guoyuan Li ◽  
Wei Zhong ◽  
Rongsheng Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Thin Film Transistors ◽  
Low Leakage ◽  
Low Leakage Current

Oxygen transport during annealing of Pb(Zr,Ti)O3 thin films in O2 gas and its effect on their conductivity

2001 ◽  
Vol 16 (10) ◽  
pp. 3005-3008 ◽  
Author(s):  
F. Ayguavives ◽  
B. Agius ◽  
B. EaKim ◽  
I. Vickridge
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Leakage Current ◽  
Lead Zirconate Titanate ◽  
Lead Zirconate ◽  
Low Leakage ◽  
Pzt Film ◽  
Low Leakage Current ◽  
Pzt Thin Film ◽  
Current Densities

Lead zirconate titanate (PZT) thin films were deposited in a reactive argon/oxygen gas mixture by radio-frequency-magnetron sputtering. The use of a metallic target allows us to control the oxygen incorporation in the PZT thin film and also, using oxygen 18 as a tracer, to study the oxygen diffusion in the thin films. Electrical properties and crystallization were optimized with a 90-nm PZT thin film grown on RuO2 electrodes. These PZT films, annealed with a very modest thermal budget (550 °C) show very low leakage current densities (J = 2 × 10−8 A/cm2 at 1 V). In this article we show that a strong correlation exists between the oxygen composition in the PZT film and the leakage current density.

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