Ion drag force on a small grain in highly collisional weakly anisotropic plasma: Effect of plasma production and loss mechanisms

2008 ◽  
Vol 15 (5) ◽  
pp. 053703 ◽  
Author(s):  
M. Chaudhuri ◽  
S. A. Khrapak ◽  
G. E. Morfill
2012 ◽  
Vol 2012 (8) ◽  
Author(s):  
Mariano Chernicoff ◽  
Daniel Fernández ◽  
David Mateos ◽  
Diego Trancanelli

2008 ◽  
Author(s):  
Manis Chaudhuri ◽  
Sergei A. Khrapak ◽  
Gregor E. Morfill ◽  
José Tito Mendonça ◽  
David P. Resendes ◽  
...  

2003 ◽  
Vol 766 ◽  
Author(s):  
Kosuke Takenaka ◽  
Masao Onishi ◽  
Manabu Takenshita ◽  
Toshio Kinoshita ◽  
Kazunori Koga ◽  
...  

AbstractAn ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H2 + C2H5OH[Cu(hfac)2] discharges with a ratio H2 / (H2 + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width.


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