Unpinning of the Fermi level and tunneling in metal oxide semiconductors

2008 ◽  
Vol 92 (16) ◽  
pp. 162104 ◽  
Author(s):  
C. Malagù ◽  
G. Martinelli ◽  
M. A. Ponce ◽  
C. M. Aldao
2019 ◽  
Vol 6 (7) ◽  
pp. 1767-1774 ◽  
Author(s):  
Yanfang Zhao ◽  
Xiaoxin Zou ◽  
Hui Chen ◽  
Xuefeng Chu ◽  
Guo-Dong Li

The elevated Fermi level and increased surface basicity of 5Y-In2O3 led to the improvement of response and selectivity towards formaldehyde.


Author(s):  
Samriti ◽  
Vishal Rajput ◽  
Raju Kumar Gupta ◽  
Jai Prakash

Fundamentals of doping engineering strategies of metal oxide semiconductors and various charge transfer processes for emerging SERS applications are discussed.


2021 ◽  
Vol MA2021-01 (39) ◽  
pp. 1251-1251
Author(s):  
Gerko Oskam ◽  
Ingrid Rodriguez Gutierrez ◽  
Manuel Rodríguez Pérez ◽  
Alberto Vega Poot ◽  
Geonel Rodriguez Gattorno ◽  
...  

Author(s):  
Jing Wang ◽  
Teunis van Ree ◽  
Yuping Wu ◽  
Peng Zhang ◽  
Lian Gao

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