An investigation of correlation between transport characteristics and trap states in n-channel organic field-effect transistors

2008 ◽  
Vol 92 (16) ◽  
pp. 163307 ◽  
Author(s):  
Naoko Kawasaki ◽  
Yohei Ohta ◽  
Yoshihiro Kubozono ◽  
Atsushi Konishi ◽  
Akihiko Fujiwara
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Trap States ◽  
Organic Field Effect Transistors

Effect of dielectric surface passivation on organic field-effect transistors: spectral analysis of the density of trap-states

2021 ◽  
Vol 37 (1) ◽  
pp. 015015
Author(s):  
Yogesh Yadav ◽  
Samarendra Pratap Singh
Keyword(s):  
Contact Resistance ◽  
Field Effect ◽  
Surface Passivation ◽  
Field Effect Transistors ◽  
Contact Potential Difference ◽  
Dielectric Surface ◽  
Trap States ◽  
Organic Field Effect Transistors ◽  
The Impact ◽  
Lower Contact

Abstract The semiconductor/dielectric interface is arguably the most important region in field-effect transistors. This article investigates the performance-enhancing effects of passivation of the dielectric surface by a self-assembled layer (SAM) of silanes on organic field-effect transistors. Apart from conventional figures of merit for the devices, the energetic distribution of the density of the in-gap trap-states (trap-DOS) and the contact resistance are evaluated using numerical methods. The investigation reveals that the surface passivation of the dielectric SiO2 has a dual effect on device operation. Firstly, it establishes quantitatively that the surface passivation leads to a significant reduction in the density of both shallow and deep traps in the organic semiconductor PBTTT-C14. This effect outweighs the impact of the SAM dipoles on the device turn-on. Secondly, the contact resistance gets lowered by a factor of more than 10 due to the improved top-surface morphology of the PBTTT-C14 thin film. The lower contact resistance in devices is corroborated by lower contact potential difference between PBTTT-C14 and gold, measured using scanning kelvin probe microscopy.

Charge Effect in Organic Field-Effect Transistors - Analyzing Hall Measurements in the Accumulation Layer

2007 ◽  
Vol 31 ◽  
pp. 4-6 ◽  
Author(s):  
Harry L. Kwok
Keyword(s):  
Carrier Density ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Effective Means ◽  
Transport Layer ◽  
Trap States ◽  
Organic Field Effect Transistors ◽  
Accumulation Layer ◽  
Extract Information

Hall measurement is an effective means to measure carrier density and mobility in metals and semiconductors. This work examined the carrier mobility determined in the accumulation layer of organic field-effect transistors (OFETS) and proposed a method to explain data taken from rubrene single-crystal devices. The model was used to extract information on the trap states and the properties of the transport layer at different temperature.

Probing the density of trap states in the middle of the bandgap using ambipolar organic field-effect transistors

2018 ◽  
Vol 123 (16) ◽  
pp. 161574
Author(s):  
Roger Häusermann ◽  
Sophie Chauvin ◽  
Antonio Facchetti ◽  
Zhihua Chen ◽  
Jun Takeya ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Trap States ◽  
Organic Field Effect Transistors

Influence of distributed trap states on the characteristics of top and bottom contact organic field-effect transistors

2004 ◽  
Vol 19 (7) ◽  
pp. 2014-2027 ◽  
Author(s):  
T. Lindner ◽  
G. Paasch ◽  
S. Scheinert
Keyword(s):  
Gate Voltage ◽  
Field Effect ◽  
Ohmic Contacts ◽  
Field Effect Transistors ◽  
Analytical Approximation ◽  
Trap States ◽  
Organic Field Effect Transistors ◽  
Schottky Type ◽  
Internal Concentration ◽  
Free Case

Numerical simulations of organic field-effect transistors (OFET) of bottom and top contact (BOC, TOC) design with different source/drain contacts were carried out considering an exponential distribution of trap states in the gap of the active layer (a-Si model). For ohmic contacts, the current-voltage characteristics are similar to the trap-free case and there is not much difference between the two designs. However, the currents are lower due to immobile trapped charges, the threshold voltage is shifted, and the inverse subthreshold slope increases due to trap recharging. An analytical approximation for the effective mobility deviates from the simulation up to 20%. For low source/drain work function, there occur particular dependencies of the current on the gate voltage for the two designs, which are explained with the internal concentration and field profiles. A series resistance between source and channel causes in the TOC structure an abrupt transition from the gate voltage independent active region into saturation. In the BOC case, the reverse-biased Schottky-type source contact dominates the current. Through simulation of measured characteristics of prepared OFETs based on a modified poly-(phenylene-vinylene), the observed hysteresis is analyzed.

Polarization-Induced Transport: A Comparative Study of Ferroelectric and Non-Ferroelectric Dielectric-Gated Organic Field-Effect Transistors

MRS Advances ◽  
2017 ◽  
Vol 2 (51) ◽  
pp. 2951-2956 ◽  
Author(s):  
Amrit Laudari ◽  
Shubhra Gangopadhyay ◽  
Suchismita Guha
Keyword(s):  
Dielectric Constant ◽  
Comparative Study ◽  
Field Effect ◽  
Carrier Transport ◽  
Vinylidene Fluoride ◽  
Field Effect Transistors ◽  
Negative Temperature ◽  
Trap States ◽  
Organic Field Effect Transistors ◽  
Poly Vinylidene Fluoride

ABSTRACTA comparative study of ferroelectric and non-ferroelectric-gated organic field-effect transistors (FETs) have been carried out by using a small molecule semiconductor 6,13 bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) to understand the fundamental aspects of carrier transport in FET architectures. Temperature-dependent current-voltage characteristics from non-ferroelectric dielectric-gated FETs show a clear activated transport, independent of the dielectric constant. While using the ferroelectric dielectric polymer poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE), where the dielectric constant may be tuned by changing the temperature, a negative temperature coefficient of the carrier mobility is observed beyond 200 K. The polarization fluctuation dominant transport inherent to a ferroelectric dielectric in conjunction with the discrete nature of traps in TIPS-pentacene results in an effective de-trapping of the shallow trap states into more mobile states.

scholarly journals Quantitative analysis of the density of trap states at the semiconductor-dielectric interface in organic field-effect transistors

2015 ◽  
Vol 107 (10) ◽  
pp. 103303 ◽  
Author(s):  
Peter J. Diemer ◽  
Zachary A. Lamport ◽  
Yaochuan Mei ◽  
Jeremy W. Ward ◽  
Katelyn P. Goetz ◽  
...  
Keyword(s):  
Quantitative Analysis ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Trap States ◽  
Organic Field Effect Transistors ◽  
Dielectric Interface
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