High capacitance density metal-insulator-metal structures based on a high-κ HfNxOy–SiO2–HfTiOy laminate stack

2008 ◽  
Vol 92 (13) ◽  
pp. 132902 ◽  
Author(s):  
V. Mikhelashvili ◽  
P. Thangadurai ◽  
W. D. Kaplan ◽  
G. Eisenstein
Keyword(s):  
Metal Insulator ◽  
Capacitance Density ◽  
Metal Structures ◽  
High Capacitance ◽  
Metal Insulator Metal

Metal-insulator-metal capacitor with high capacitance density and low leakage current using ZrTiO4 film

2009 ◽  
Vol 95 (11) ◽  
pp. 113502 ◽  
Author(s):  
Yung-Hsien Wu ◽  
Bo-Yu Chen ◽  
Lun-Lun Chen ◽  
Jia-Rong Wu ◽  
Min-Lin Wu
Keyword(s):  
Leakage Current ◽  
Metal Insulator ◽  
Capacitance Density ◽  
High Capacitance ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Metal Insulator Metal

New Stacked Metal–Insulator–Metal Capacitor with High Capacitance Density for Future InP-Based ICs

2011 ◽  
Vol 50 (4S) ◽  
pp. 04DF09 ◽  
Author(s):  
Takuya Tsutsumi ◽  
Suehiro Sugitani ◽  
Kazumi Nishimura ◽  
Minoru Ida
Keyword(s):  
Metal Insulator ◽  
Capacitance Density ◽  
High Capacitance ◽  
Metal Insulator Metal

New Stacked Metal–Insulator–Metal Capacitor with High Capacitance Density for Future InP-Based ICs

2011 ◽  
Vol 50 (4) ◽  
pp. 04DF09 ◽  
Author(s):  
Takuya Tsutsumi ◽  
Suehiro Sugitani ◽  
Kazumi Nishimura ◽  
Minoru Ida
Keyword(s):  
Metal Insulator ◽  
Capacitance Density ◽  
High Capacitance ◽  
Metal Insulator Metal

Dielectric Relaxation and Reliability of Al2O3-HfO2-Al2O3 Sandwiched Metal-Insulator-Metal (MIM) Capacitor

2013 ◽  
Vol 658 ◽  
pp. 116-119
Author(s):  
Ho Young Kwak ◽  
Hyuk Min Kwon ◽  
Sung Kyu Kwon ◽  
Jae Hyung Jang ◽  
Seung Yong Sung ◽  
...  
Keyword(s):  
Dielectric Relaxation ◽  
Charge Trapping ◽  
Dissipation Factor ◽  
Metal Insulator ◽  
Capacitance Density ◽  
High Capacitance ◽  
Voltage Coefficient ◽  
Low Dissipation ◽  
Metal Insulator Metal ◽  
Sandwiched Structure

. In this paper, dielectric relaxation and reliability of high capacitance density metal-insulator-metal (MIM) capacitor using Al2O3-HfO2-Al2O3 sandwiched structure were analyzed. It is shown that multilayer MIM capacitor provides high capacitance density and low dissipation factor at room temperature. The dielectric relaxation voltage shows little dependence on the capacitor area. The capacitance density (C0) increases and quadratic voltage coefficient (α) decreases as a function of stress time under constant voltage stress (CVS) because of the charge trapping effect in the high-k dielectric.

Surface plasmon modes of nanomesh-on-mirror nanocavities prepared by nanosphere lithography

Nanoscale ◽  
2018 ◽  
Vol 10 (37) ◽  
pp. 17983-17989 ◽  
Author(s):  
Christian Stelling ◽  
Stefan Fossati ◽  
Jakub Dostalek ◽  
Markus Retsch
Keyword(s):  
Surface Plasmon ◽  
Self Assembly ◽  
Nanosphere Lithography ◽  
Analytical Theory ◽  
Narrow Gap ◽  
Metal Insulator ◽  
Metal Structures ◽  
Metal Insulator Metal ◽  
Plasmon Modes

Metal–insulator–metal structures prepared by self-assembly exhibit narrow gap plasmon modes, which are fully described by analytical theory.

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