The electrical and mechanical properties of Au–V and Au–V2O5 thin films for wear-resistant RF MEMS switches

2008 ◽  
Vol 103 (8) ◽  
pp. 083522 ◽  
Author(s):  
Thirumalesh Bannuru ◽  
Walter L. Brown ◽  
Suparut Narksitipan ◽  
Richard P. Vinci
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Rf Mems ◽  
Wear Resistant ◽  
Mems Switches ◽  
Rf Mems Switches ◽  
V2o5 Thin Films

Electrical and mechanical properties of layered gold–chromium thin films for ohmic contacts in RF-MEMS switches

2009 ◽  
Vol 163 (3) ◽  
pp. 199-203 ◽  
Author(s):  
V. Mulloni ◽  
R. Bartali ◽  
S. Colpo ◽  
F. Giacomozzi ◽  
N. Laidani ◽  
...  
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Ohmic Contacts ◽  
Rf Mems ◽  
Mems Switches ◽  
Rf Mems Switches

Development of capacitive RF MEMS switches with TaN and Ta 2 O 5 thin films

2011 ◽  
Author(s):  
Anna Persano ◽  
Fabio Quaranta ◽  
Adriano Cola ◽  
Giorgio De Angelis ◽  
Romolo Marcelli ◽  
...  
Keyword(s):  
Thin Films ◽  
Rf Mems ◽  
Mems Switches ◽  
Rf Mems Switches

Development of Piezoelectric RF-MEMS Switch Driven by Low Operating Voltage

2005 ◽  
Author(s):  
Isaku Kanno ◽  
Takaaki Suzuki ◽  
Hironobo Endo ◽  
Hidetoshi Kotera
Keyword(s):  
Thin Films ◽  
Rf Mems ◽  
Low Voltage ◽  
Operating Voltage ◽  
Pzt Thin Films ◽  
Mems Switches ◽  
Mems Switch ◽  
Low Voltage Operation ◽  
Rf Components ◽  
Rf Mems Switches

This paper presents the possibility of piezoelectric RF-MEMS switches for low voltage operation. The switches we fabricated consist of micro-cantilevers using PZT thin films with the length of 490 μm and the width of 87 μm. The cantilevers are actuated as unimorph actuators that can be deflected by applying voltage between upper and lower electrodes. We could obtain large tip deflection of 3 μm even at the low voltage of 5.0V, which is well compatible with conventional IC drivers. This result indicates that the RF-MEMS switches using piezoelectric PZT thin films is advantageous to the low voltage switching devices in RF components compared with conventionally proposed electrostatic ones.

scholarly journals Ta2O5Thin Films for Capacitive RF MEMS Switches

2010 ◽  
Vol 2010 ◽  
pp. 1-5 ◽  
Author(s):  
Anna Persano ◽  
Fabio Quaranta ◽  
Adriano Cola ◽  
Antonietta Taurino ◽  
Giorgio De Angelis ◽  
...  
Keyword(s):  
Thin Films ◽  
Rf Mems ◽  
Electrical Characterization ◽  
Mems Switches ◽  
Dielectric Layers ◽  
Rf Mems Switches ◽  
High Dielectric ◽  
Deposited Films ◽  
Better Than

Shunt capacitive RF MEMS switches have been developed using III-V technology and employing (tantalum pentoxide) Ta2O5thin films as dielectric layers. In order to evaluate the potential of the Ta2O5thin films for the considered application, the compositional, structural, and electrical characterization of the deposited films has been performed, demonstrating that they are good candidates to be used as dielectric layers for the fabrication of RF MEMS switches. Specifically, Ta2O5films are found to show a leakage current density of few nA/cm2forE∼1 MV/cm and a high dielectric constant of 32. Moreover, the charging process has been investigated, finding that it follows a stretched exponential law. The fabricated switches show actuation voltages in the range 15–20 V, an insertion loss better than −0.8 dB up to 30 GHz, and an isolation of ~−40 dB at the resonant frequency which is around 25 GHz.

scholarly journals Load-Deflection Behavior of RF-MEMS Switches: FEA and Analytical Modeling for Prediction of Mechanical Properties

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 968
Author(s):  
Chiara De Pascali ◽  
Alvise Bagolini ◽  
Donatella Duraccio ◽  
Pietro Siciliano ◽  
Luca Francioso
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Analytical Modeling ◽  
Rf Mems ◽  
Element Analysis ◽  
Mems Switches ◽  
Calculated Stress ◽  
Rf Mems Switches ◽  
Point Pressure ◽  
Prediction Of Mechanical Properties

SixNy/a-Si/SixNy thin film RF-MEMS switches were fabricated by unconventional PECVD process using surface micromachining approach. The mechanical properties of tri-layer were measured by nanoindentation and wafer curvature method. Deflections of switches clamped on two opposite edges were measured by a profilometer applying increasing quasi-point pressure loads. Finite Element Analysis (FEA) was used to study the mechanical behavior of clamped-clamped switches. An analytical solution was developed and validated, numerically and experimentally, to describe the load-deflection response of perforated membranes to quasi-point loads. The proposed function was used to determine the internal stress of the investigated membranes; the relative error between the predicted and calculated stress values was in the range 2.1–8.5%.

Transport and charging mechanisms in Ta2O5 thin films for capacitive RF MEMS switches application

2010 ◽  
Vol 107 (11) ◽  
pp. 114502 ◽  
Author(s):  
A. Persano ◽  
F. Quaranta ◽  
M. C. Martucci ◽  
P. Cretì ◽  
P. Siciliano ◽  
...  
Keyword(s):  
Thin Films ◽  
Rf Mems ◽  
Mems Switches ◽  
Rf Mems Switches
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