Characteristics of long wavelength InGaN quantum well laser diodes

2008 ◽  
Vol 92 (10) ◽  
pp. 101103 ◽  
Author(s):  
K. S. Kim ◽  
J. K. Son ◽  
S. N. Lee ◽  
Y. J. Sung ◽  
H. S. Paek ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Long Wavelength ◽  
Quantum Well Laser

Evidence of gain enhancement in long wavelength strained quantum well laser diodes

1991 ◽  
Vol 27 (5) ◽  
pp. 469 ◽  
Author(s):  
J.S. Osinski ◽  
P. Grodzinski ◽  
Y. Zou ◽  
P.D. Dapkus
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Long Wavelength ◽  
Gain Enhancement ◽  
Quantum Well Laser ◽  
Strained Quantum Well

Highly efficient TE/TM mode switching of GaAsP/AlGaAs strained quantum‐well laser diodes

1994 ◽  
Vol 64 (2) ◽  
pp. 158-160 ◽  
Author(s):  
Hidenao Tanaka ◽  
Jun‐ichi Shimada ◽  
Yoshio Suzuki
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Mode Switching ◽  
Quantum Well Laser ◽  
Highly Efficient ◽  
Tm Mode ◽  
Strained Quantum Well

AlGaInP single quantum well laser diodes

1995 ◽  
Author(s):  
David P. Bour ◽  
David W. Treat ◽  
K. J. Beernink ◽  
Ross D. Bringans
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Laser

High‐power operation in InGaAs separate confinement heterostructure quantum well laser diodes

1988 ◽  
Vol 53 (1) ◽  
pp. 1-3 ◽  
Author(s):  
M. Kitamura ◽  
S. Takano ◽  
T. Sasaki ◽  
H. Yamada ◽  
I. Mito
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Laser Diodes ◽  
Quantum Well Laser ◽  
High Power Operation ◽  
Power Operation
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