ABSTRACTRoom temperature photoluminescence (PL) spectra from zinc oxide (ZnO) nanostructures were studied. ZnO samples were produced via thermal chemical vapor deposition (thermal-CVD) and a variety of ZnO nanostructures were synthesized by adjusting the oxygen content during the growth process. All samples exhibit a sharp and strong ultra-violet near-band-edge (NBE) emission at about 3.18 eV. The visible emission from the samples deposited under an oxygen-deficient condition were dominated by blue-green band emission at 2.34 eV. The intensity of the blue-green band was greatly reduced (so-called green band free) for the ZnO deposited at the center of the wafer while strong violet-blue emission bands and broad bands at yellow-orange-red range were collected from the ZnO grown along the edge of the wafer. We believe that the spatial inhomogeniety was caused by turbulent gas flow in the reaction chamber, which resulted in different local oxygen concentration. Origin of visible luminescence from ZnO nanostructures will be discussed and a model to explain the observed visible luminescence process will be presented.
Isoelectronic centers and type-II quantum dots: Mechanisms for the green band emission in ZnSeTe alloy