Influence of the Ge concentration in the virtual substrate on the low frequency noise in strained-Si surface n-channel metal-oxide-semiconductor field-effect transistors

2008 ◽  
Vol 103 (4) ◽  
pp. 044501 ◽  
Author(s):  
Kristel Fobelets ◽  
Sergey L. Rumyantsev ◽  
Michael S. Shur ◽  
Sarah H. Olsen
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Strained Si

Low frequency noise in 4H-SiC metal oxide semiconductor field effect transistors

2008 ◽  
Vol 104 (9) ◽  
pp. 094505 ◽  
Author(s):  
S. L. Rumyantsev ◽  
M. S. Shur ◽  
M. E. Levinshtein ◽  
P. A. Ivanov ◽  
J. W. Palmour ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Frequency Noise ◽  
Low Frequency Noise

Analysis of the Low-Frequency Noise Reduction in Si(100) Metal–Oxide–Semiconductor Field-Effect Transistors

2011 ◽  
Vol 50 (4) ◽  
pp. 04DC01 ◽  
Author(s):  
Philippe Gaubert ◽  
Akinobu Teramoto ◽  
Rihito Kuroda ◽  
Yukihisa Nakao ◽  
Hiroaki Tanaka ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Noise Reduction ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Frequency Noise ◽  
Low Frequency Noise
Sign in / Sign up

Export Citation Format

Share Document