Temperature dependence of effective g factor in diluted magnetic semiconductor (Ga,Mn)As

2008 ◽  
Vol 103 (5) ◽  
pp. 053901 ◽  
Author(s):  
R. Zhou ◽  
B. Q. Sun ◽  
X. Z. Ruan ◽  
H. H. Luo ◽  
Y. Ji ◽  
...  
2009 ◽  
Vol 23 (17) ◽  
pp. 3596-3601 ◽  
Author(s):  
LJUDMILA SHCHUROVA ◽  
VLADIMIR KULBACHINSKII

We have investigated the thermodynamic, transport and magnetotransport properties of free charge carriers in a diluted magnetic semiconductor with a quantum well In0.17Ga0.83As in GaAs with δ-doped by C and Mn. In order to determine the density of the holes in a quantum well, we carried out thermodynamic calculations of the system of free holes, atoms Mn0 and ions Mn-. We calculated the temperature dependence of resistance and magnetoresistance of holes in the quantum well. The contributions of various scattering mechanisms of holes to the resistance were analyzed. The negative magnetoresistance are explained as the reduction of spin-flip scattering by aligning spins of the magnetic field.


Author(s):  
М.В. Ведь ◽  
М.В. Дорохин ◽  
В.П. Лесников ◽  
А.В. Кудрин ◽  
П.Б. Дёмина ◽  
...  

The possibility of using a diluted magnetic semiconductor (In,Fe)Sb as a functional layer for use in spintronics, namely, as a ferromagnetic injector in a spin light emitting diode, has been investigated. We studied the luminescent characteristics, as well as the temperature dependence of the circular polarization degree of a spin LED electroluminescence with an (In,Fe)Sb injector.


2018 ◽  
Vol 10 (5) ◽  
pp. 05005-1-05005-5
Author(s):  
I. D. Stolyarchuk ◽  
◽  
I. Rogalska ◽  
S. V. Koretskii ◽  
I. Stefaniuk ◽  
...  

2015 ◽  
Vol 15 ◽  
pp. S26-S29 ◽  
Author(s):  
Hee Chang Jeon ◽  
Mingkai Li ◽  
Seung Joo Lee ◽  
Gukhyung Ihm ◽  
Tae Won Kang ◽  
...  

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