Infrared spectra of (HCOOH)2 and (DCOOH)2 in rare gas matrices: A comparative study with gas phase spectra

2008 ◽  
Vol 128 (11) ◽  
pp. 114310 ◽  
Author(s):  
Fumiyuki Ito
1972 ◽  
Vol 25 (1) ◽  
pp. 27 ◽  
Author(s):  
CG Barraclough ◽  
DJ Kew

The infrared spectra of ReOCl4 and OsOCl4 have been measured in the gas phase, in the condensed phase, and in a variety of solvents. In the gas phase spectra the absorption band envelopes corresponding to the metal-oxygen stretching vibrations have been observed and the data are discussed in terms of possible square pyramidal or trigonal bipyramidal structures for the molecules. Evidence is presented showing that acetone and diethyl ether molecules will readily coordinate to these oxide tetrachlorides when dissolved in inert solvents. The effect of traces of water on the same solutions is also described and discussed. Both ReOCl4 and OsOCl4 react with the solvent if dissolved in acetone or diethyl ether and the possibility of the formation of the unknown oxide trichlorides is discussed.


1979 ◽  
Vol 34 (11) ◽  
pp. 1269-1274 ◽  
Author(s):  
Erik Bjarnov

Vinyl ketene (1,3-butadiene-1-one) has been synthesized by vacuum pyrolysis of 3-butenoic 2-butenoic anhydride. The microwave and infrared spectra of vinyl ketene in the gas phase at room temperature have been studied. The trans-rotamer has been identified, and the spectroscopic constants were found to be Ã= 39571(48) MHz, B̃ = 2392.9252(28) MHz, C̃ = 2256.0089(28) MHz, ⊿j = 0.414(31) kHz, and ⊿JK = - 34.694(92) kHz. The electrical dipole moment was found to be 0.987(23) D with μa = 0.865(14) D and μb = 0.475(41) D. A tentative assignment has been made for 17 of the 21 normal modes of vibration


2021 ◽  
Vol 23 (7) ◽  
pp. 4334-4343
Author(s):  
Sandra D. Wiersma ◽  
Alessandra Candian ◽  
Joost M. Bakker ◽  
Giel Berden ◽  
John R. Eyler ◽  
...  

We present the gas-phase infrared spectra of the phenyl cation, phenylium, in its perprotio (C6H5+) and perdeutero (C6D5+) forms, in the 260–1925 cm−1 (5.2–38 μm) spectral range, and investigate the observed photofragmentation.


2010 ◽  
Vol 259 (1) ◽  
pp. 11-15 ◽  
Author(s):  
Lars Biemann ◽  
Michaela Braun ◽  
Karl Kleinermanns

1994 ◽  
Vol 100 (10) ◽  
pp. 7079-7086 ◽  
Author(s):  
S. Li ◽  
R. J. Van Zee ◽  
W. Weltner
Keyword(s):  

2011 ◽  
Vol 50 (3) ◽  
pp. 771-782 ◽  
Author(s):  
Lucie Ducháčková ◽  
Jana Roithová ◽  
Petr Milko ◽  
Jan Žabka ◽  
Nikos Tsierkezos ◽  
...  

1999 ◽  
Vol 572 ◽  
Author(s):  
Jingxi Sun ◽  
J. M. Redwing ◽  
T. F. Kuech

ABSTRACTA comparative study of two different MOVPE reactors used for GaN growth is presented. Computational fluid dynamics (CFD) was used to determine common gas phase and fluid flow behaviors within these reactors. This paper focuses on the common thermal fluid features of these two MOVPE reactors with different geometries and operating pressures that can grow device-quality GaN-based materials. Our study clearly shows that several growth conditions must be achieved in order to grow high quality GaN materials. The high-temperature gas flow zone must be limited to a very thin flow sheet above the susceptor, while the bulk gas phase temperature must be very low to prevent extensive pre-deposition reactions. These conditions lead to higher growth rates and improved material quality. A certain range of gas flow velocity inside the high-temperature gas flow zone is also required in order to minimize the residence time and improve the growth uniformity. These conditions can be achieved by the use of either a novel reactor structure such as a two-flow approach or by specific flow conditions. The quantitative ranges of flow velocities, gas phase temperature, and residence time required in these reactors to achieve high quality material and uniform growth are given.


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