scholarly journals Influence of capping layer and atomic interdiffusion on the strain distribution in single and double self-assembled InAs∕GaAs quantum dots

2008 ◽  
Vol 92 (8) ◽  
pp. 083112 ◽  
Author(s):  
Mou Yang ◽  
S. J. Xu ◽  
Jian Wang
Keyword(s):  
Quantum Dots ◽  
Strain Distribution ◽  
Capping Layer ◽  
Self Assembled

Strain distribution in self-assembled InP/GaInP quantum dots

2000 ◽  
Vol 88 (2) ◽  
pp. 710-715 ◽  
Author(s):  
N. Y. Jin-Phillipp ◽  
F. Phillipp
Keyword(s):  
Quantum Dots ◽  
Strain Distribution ◽  
Self Assembled

Strain distribution and optical phonons in InAs/InP self-assembled quantum dots

1999 ◽  
Vol 60 (23) ◽  
pp. 16013-16017 ◽  
Author(s):  
J. Groenen ◽  
C. Priester ◽  
R. Carles
Keyword(s):  
Quantum Dots ◽  
Strain Distribution ◽  
Optical Phonons ◽  
Self Assembled

How are Mismatched Systems Ruled by the Wedding Between Surfaces and Strains? Two Examples

1997 ◽  
Vol 11 (31) ◽  
pp. 3673-3689
Author(s):  
C. Priester
Keyword(s):  
Surface Tension ◽  
Quantum Dots ◽  
Quantum Well ◽  
Strain Distribution ◽  
Strain Relaxation ◽  
Self Assembled ◽  
Strained Quantum Well ◽  
Mismatched Heteroepitaxy

In mismatched heteroepitaxy, the two main leading parameters are strain relaxation and surface tension. We emphasize the role of surfaces in two cases: nucleation of self assembled quantum dots in highly mismatched heteroepitaxy and strain distribution in a strained quantum well deposited on the cleaved edge of a strained superlattice.

The influence of a capping layer on optical properties of self-assembled InGaN quantum dots

2007 ◽  
Vol 101 (11) ◽  
pp. 113520-113520 ◽  
Author(s):  
Q. Wang ◽  
T. Wang ◽  
P. J. Parbrook ◽  
J. Bai ◽  
A. G. Cullis
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Capping Layer ◽  
Self Assembled

Strain- and surface-induced modification of photoluminescence from self-assembled GaN/Al0.5Ga0.5N quantum dots: strong effect of capping layer and atmospheric condition

2014 ◽  
Vol 25 (30) ◽  
pp. 305703 ◽  
Author(s):  
Je-Hyung Kim ◽  
Donia Elmaghraoui ◽  
Mathieu Leroux ◽  
Maxim Korytov ◽  
Philippe Vennéguès ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Atmospheric Condition ◽  
Capping Layer ◽  
Self Assembled

Influence of capping layer thickness on electronic states in self assembled MOVPE grown InAs quantum dots in GaAs

2009 ◽  
Vol 46 (1-2) ◽  
pp. 324-327 ◽  
Author(s):  
P. Hazdra ◽  
J. Oswald ◽  
V. Komarnitskyy ◽  
K. Kuldová ◽  
A. Hospodková ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Layer Thickness ◽  
Electronic States ◽  
Inas Quantum Dots ◽  
Capping Layer ◽  
Self Assembled
Sign in / Sign up

Export Citation Format

Share Document