Crystalline structure and magnetic properties of Fe2CrSi Heusler alloy films: New ferromagnetic material for high-performance magnetic random access memory

2008 ◽  
Vol 103 (7) ◽  
pp. 07D716 ◽  
Author(s):  
S. Yoshimura ◽  
H. Asano ◽  
Y. Nakamura ◽  
K. Yamaji ◽  
Y. Takeda ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Crystalline Structure ◽  
Heusler Alloy ◽  
High Performance ◽  
Random Access ◽  
Random Access Memory ◽  
Ferromagnetic Material ◽  
Access Memory ◽  
Alloy Films ◽  
Magnetic Random Access Memory

3D Cross-Point Spin Transfer Torque Magnetic Random Access Memory

SPIN ◽  
2017 ◽  
Vol 07 (03) ◽  
pp. 1740011 ◽  
Author(s):  
Hongxin Yang ◽  
Xiaobin Wang ◽  
Xiaojie Hao ◽  
Zihui Wang ◽  
Roger Malmhall ◽  
...  
Keyword(s):  
High Performance ◽  
Low Cost ◽  
Random Access ◽  
Random Access Memory ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Access Memory ◽  
Cross Point ◽  
Magnetic Random Access Memory ◽  
Operation Speed

We explore a 3D cross-point spin transfer torque magnetic random access memory (STT-MRAM) array based on the integration of a perpendicular magnetic tunneling junction (pMTJ) with a matching two-terminal selector. The integrated two-terminal device provides a unique opportunity for a high density, low cost stackable storage class memory that can achieve a fast operation speed, long data retention, low bit error rate (BER) and high endurance. 55[Formula: see text]nm size pillar shaped pMTJ and selector devices have been fabricated and characterized. The selector is compatible with pMTJ whether it is in the high or low resistance state. The pMTJ can be RESET and SET after the selector turns on. We model the dynamic switching of the coupled pMTJ and selector devices. Our model shows the importance of the optimal matching of pMTJ magnetic properties with selector resistive properties to achieve high performance.

scholarly journals Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
High Performance ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

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