The impact of thermal annealing and adhesion film thickness on the resistivity and the agglomeration behavior of titanium/platinum thin films

2008 ◽  
Vol 103 (5) ◽  
pp. 054902 ◽  
Author(s):  
Ulrich Schmid
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Thermal Annealing ◽  
The Impact

The impact of substrate properties and thermal annealing on tantalum nitride thin films

2012 ◽  
Vol 258 (7) ◽  
pp. 2894-2900 ◽  
Author(s):  
M. Grosser ◽  
M. Münch ◽  
H. Seidel ◽  
C. Bienert ◽  
A. Roosen ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Tantalum Nitride ◽  
Substrate Properties ◽  
The Impact

The impact of thermal annealing on the temperature dependent resistance behavior of Pt thin films sputtered on Si and Al2O3 substrates

2019 ◽  
Vol 685 ◽  
pp. 372-378 ◽  
Author(s):  
Xingkai Lin ◽  
Congchun Zhang ◽  
Shenyong Yang ◽  
Wei Guo ◽  
Yu Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Temperature Dependent ◽  
The Impact

Fabrication of C54-TiSi2 Thin Films Using Cathodic Arc Deposition and Rapid Thermal Annealing

2007 ◽  
Vol 1052 ◽  
Author(s):  
Hui Xia ◽  
William R. Knudsen ◽  
Paul L. Bergstrom
Keyword(s):  
Thin Films ◽  
Phase Transformation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Substrate Bias ◽  
Cathodic Arc Deposition ◽  
The Impact ◽  
Cathodic Arc ◽  
Arc Deposition

AbstractDue to its low electrical resistivity and high thermal stability, C54-TiSi2 thin films can be used in some MEMS application, such as RF MEMS, to reduce RC delay and improve dynamic performance. In this paper, TiSi2 thin films have been prepared for the first time by using cathodic arc deposition to study the impact of energetic ion bombardment on the film microstructure and subsequent C49-C54 phase transformation during annealing. TiSi2 compound was used as the cathode and a substrate bias was varied to control kinetic energy of the ions during the film growth. Rutherford backscattering spectrometry and transmission electron microscopy were utilized to characterize the film composition and microstructure. The composition of the resultant TiSix thin films varies from x=2.4 to x=1.4 when the substrate bias was varied from floating to –200V. The as-deposited TiSix films are amorphous under no substrate heating and a phase separation at nano scale with inhomogeneous distribution of Ti and Si atoms was observed within the amorphous phase. Si atoms are seen to segregate on the boundary of Ti-rich domains and the domain size increased with the substrate bias. For a 90nm-thick TiSi2 film deposited on a SiO2/Si substrate, kinetics of the C49-C54 phase transformation was studied by measuring the change of film resistivity upon rapid thermal annealing. It was found that the C49-C54 phase transition temperature is higher (>900°C) for the arc-deposited TiSi2 thin films compared to evaporated and sputtered films and the activation energy for the transformation was calculated to be 6.1±0.2eV.

scholarly journals Impact of Thickness on the Optical Properties of Selenium Thin Films

2021 ◽  
Vol 25 ◽  
Author(s):  
Shiva Udachan ◽  
Narasimha Ayachit ◽  
Lingappa Udachan ◽  
Raghunanda Halembre
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Film Thickness ◽  
Band Gap ◽  
Optical Density ◽  
Energy Gap ◽  
Band Gap Energy ◽  
Primary Objective ◽  
Gap Energy ◽  
The Impact

Objectives: The primary objective of this investigation is to make a systematic study on the impact of thickness on optical properties, such as energy gap, absorption coefficient, optical density etc., for selenium thin films. Understanding of the band gap energy and its influence on film thickness is of utmost importance in acquiring the intended electrical characterization of semiconducting films. Materials and methods: Ultra-purity selenium (99.99 %) was deposited on glass substrates. During deposition, the glass substrate with its holder were rotated with constant speed to have a smooth coating. Results and discussions: The XRD findings indicate that selenium is amorphous in nature. The optical band gap energy is found to be decreasing form (2.3 to 2eV) with the rise of film thickness in interval (200 to 1000 nm). The band gap energy obeys inverse square law with respect to thickness. Conclusion: We have properly grown thin films of Se below the De Broglie wavelength limit by thermal evaporation in vacuum. The optical density varies directly with film thickness. The absorption coefficients were in the interval (0.5 to 4) × 107m-1. The AFM results confirmed that the Se nano-size increases with the increase in thickness. Both the grain boundaries and sub-grain regions are clearly visible in the SEM micrographs

scholarly journals Effects of PCBM Loading and Thermal Annealing on Nanomorphology of Blend of Polymer/Fullerene Thin Films Solar Cells: Impact on Charge Carrier Mobility and Efficiency

2013 ◽  
Vol 467 ◽  
pp. 160-165
Author(s):  
T.S. Shafai ◽  
O. Oklobia
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Charge Carrier ◽  
Power Conversion Efficiency ◽  
Thermal Annealing ◽  
Conversion Efficiency ◽  
Short Circuit ◽  
Power Conversion ◽  
Optical Absorption Spectroscopy ◽  
The Impact

Blend of P3HT/Fullerene thin films solar cell with two different percentage ratio of PCBM loading is investigated. Optical absorption spectroscopy is employed to elucidate the nature of PCBM cluster formation upon thermal annealing. Sandwich structures comprising of ITO/ Cs2CO3/ P3HT: PCBM/ LiF/ Al (electron only device), and ITO/ PEDOT:PSS/ P3HT:PCBM/ Au (hole only device) are fabricated using spin coating for the investigations concerning electron and hole mobilities. The impact of charge carrier mobilities on bimolecular recombination and ultimately the power conversion efficiency for two different PCBM loading is also investigated. A direct correlation between Langev in recombination rate and short circuit current density as a function of thermal annealing is realized. The maximum power conversion efficiency is measured at 150°C for P3HT: PCBM (1:1) solar cell.

L10 Ordering of FePt Thin Films by Rapid Thermal Annealing

2003 ◽  
Vol 27 (11) ◽  
pp. 1083-1086 ◽  
Author(s):  
H. Ito ◽  
T. Kusunoki ◽  
H. Saito ◽  
S. Ishio
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Fept Thin Films

Giant Anisotropy of Conductivity in Hydrogenated Nanocrystalline Silicon Thin Films

1998 ◽  
Vol 536 ◽  
Author(s):  
A. B. Pevtsov ◽  
N. A. Feoktistov ◽  
V. G. Golubev
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Percolation Theory ◽  
Nanocrystalline Silicon ◽  
Spatial Light Modulators ◽  
Light Emitting ◽  
Light Modulators ◽  
Silicon Thin Films ◽  
Longitudinal Conductivity ◽  
Transverse Conductivity

AbstractThin (<1000 Å) hydrogenated nanocrystalline silicon films are widely used in solar cells, light emitting diodes, and spatial light modulators. In this work the conductivity of doped and undoped amorphous-nanocrystalline silicon thin films is studied as a function of film thickness: a giant anisotropy of conductivity is established. The longitudinal conductivity decreases dramatically (by a factor of 109 − 1010) as the layer thickness is reduced from 1500 Å to 200 Å, while the transverse conductivity remains close to that of a doped a- Si:H. The data obtained are interpreted in terms of the percolation theory.

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