Detection of 130nm magnetic particles by a portable electronic platform using spin valve and magnetic tunnel junction sensors

2008 ◽  
Vol 103 (7) ◽  
pp. 07A310 ◽  
Author(s):  
F. A. Cardoso ◽  
J. Germano ◽  
R. Ferreira ◽  
S. Cardoso ◽  
V. C. Martins ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Magnetic Particles ◽  
Spin Valve ◽  
Magnetic Tunnel Junction

Room temperature spin valve effect in the NiFe/Gr–hBN/Co magnetic tunnel junction

2016 ◽  
Vol 4 (37) ◽  
pp. 8711-8715 ◽  
Author(s):  
Muhammad Zahir Iqbal ◽  
Salma Siddique ◽  
Ghulam Hussain ◽  
Muhammad Waqas Iqbal
Keyword(s):  
Boron Nitride ◽  
Tunnel Junction ◽  
Room Temperature ◽  
Hexagonal Boron Nitride ◽  
Spin Valve ◽  
Magnetic Tunnel Junction ◽  
Valve Effect ◽  
First Time

Graphene and hexagonal boron nitride (hBN) have shown fascinating features in spintronics due to their metallic and tunneling behaviors, respectively. In this work, we report for the first time room temperature spin valve effect in NiFe/Gr–hBN/Co configuration.

scholarly journals Double Pinned Perpendicular-Magnetic-Tunnel-Junction Spin-Valve Providing Multi-level Resistance States

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Jin-Young Choi ◽  
Hansol Jun ◽  
Kei Ashiba ◽  
Jong-Ung Baek ◽  
Tae-Hun Shim ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Spin Valve ◽  
Magnetic Tunnel Junction ◽  
Multi Level ◽  
Level Resistance

Double-pinned magnetic tunnel junction sensors with spin-valve-like sensing layers

2015 ◽  
Vol 118 (5) ◽  
pp. 053904 ◽  
Author(s):  
Z. H. Yuan ◽  
L. Huang ◽  
J. F. Feng ◽  
Z. C. Wen ◽  
D. L. Li ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Spin Valve ◽  
Magnetic Tunnel Junction

Magnetically pinned ring dots for spin valve or magnetic tunnel junction memory cells

2005 ◽  
Vol 286 ◽  
pp. 31-36 ◽  
Author(s):  
Ryoichi Nakatani ◽  
Tetsuo Yoshida ◽  
Yasushi Endo ◽  
Yoshio Kawamura ◽  
Masahiko Yamamoto ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Spin Valve ◽  
Magnetic Tunnel Junction ◽  
Memory Cells

scholarly journals Multi-level resistance uniformity of double pinned perpendicular magnetic-tunnel-junction spin-valve depending on top MgO barrier thickness

AIP Advances ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 065126
Author(s):  
Han-Sol Jun ◽  
Jin-Young Choi ◽  
Kei Ashiba ◽  
Sun-Hwa Jung ◽  
Miri Park ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Spin Valve ◽  
Magnetic Tunnel Junction ◽  
Barrier Thickness ◽  
Multi Level ◽  
Level Resistance

BIAS DEPENDENCE OF SPIN TRANSFER TORQUE IN A MAGNETIC TUNNEL JUNCTION

2009 ◽  
Vol 23 (05) ◽  
pp. 695-702
Author(s):  
J. CUI ◽  
Y. H. YANG ◽  
J. WANG
Keyword(s):  
Tunnel Junction ◽  
Continuum Model ◽  
Theoretical Study ◽  
Spin Valve ◽  
Magnetic Tunnel Junction ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Function Technique ◽  
Current Direction ◽  
Analytic Expression

We report a theoretical study on the bias dependence of the current-induced torque in the noncollinear ferromagnet/barrier/ferromagnet (FM) tunnel junction. By using the Keldysh–Green function technique, we derived an analytic expression of the spin transfer torque (STT) based on a continuum model. It was found that for finite bias, the torque induced by current increases monotonically with bias and is nearly antisymmetric with regard to the current direction, which agrees with the experimental observation on the STT in the spin valve system.

Resonant and Switching Fields for a Weakly Coupled Magnetic Tunnel Junction System

SPIN ◽  
2016 ◽  
Vol 06 (04) ◽  
pp. 1640011 ◽  
Author(s):  
A. Layadi
Keyword(s):  
Tunnel Junction ◽  
Spin Valve ◽  
Magnetic Tunnel Junction ◽  
Anisotropy Field ◽  
Interlayer Exchange Coupling ◽  
Magnetization Switching ◽  
Weakly Coupled ◽  
Plane Anisotropy ◽  
Coupling Parameters ◽  
Interlayer Exchange

The ferromagnetic resonance (FMR) and the magnetization switching fields have been analytically determined for weakly coupled Magnetic Tunnel Junction or spin valve systems. Such systems consist of an antiferromagnetic (AF) and two ferromagnetic (F) thin films separated by a nonmagnetic one. Both bilinear [Formula: see text] and biquadratic [Formula: see text] coupling parameters are used to describe the interlayer exchange coupling, while the exchange anisotropy field [Formula: see text] characterizes the interfacial ([Formula: see text]/AF) interaction. It will be shown how [Formula: see text], [Formula: see text], [Formula: see text] and the in-plane anisotropy fields can be derived for the experimental measure of the FMR field and the different magnetization switching fields.

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