scholarly journals DEVELOPMENT OF THIRD HARMONIC GENERATION AS A SHORT PULSE PROBE OF SHOCK HEATED MATERIAL

2008 ◽  
Author(s):  
W. Grigsby ◽  
B. I. Cho ◽  
A. C. Bernstein ◽  
H. J. Quevedo ◽  
J. Colvin ◽  
...  
2002 ◽  
Vol 27 (17) ◽  
pp. 1561 ◽  
Author(s):  
N. A. Papadogiannis ◽  
G. Nersisyan ◽  
E. Goulielmakis ◽  
T. P. Rakitzis ◽  
E. Hertz ◽  
...  

2016 ◽  
Vol 34 (1) ◽  
pp. 171-177 ◽  
Author(s):  
Shivani Vij ◽  
Niti Kant ◽  
Munish Aggarwal

AbstractA model is presented for the resonant third harmonic generation of short pulse lasers in cluster plasma in the presence of density ripple. Because of ripple in cluster density and plasma electron density outside the cluster, the phase-matching condition for the third harmonic process is satisfied, leading to resonant enhancement of harmonic generation. We explore the impact of laser intensity, cluster size, and collisional frequency of electrons on the efficiency of third harmonic generation. Moreover, since the group velocity of the third harmonic wave is greater than that of the fundamental wave, it causes the slippage of the generated harmonic pulse out of the fundamental laser pulse and its amplitude increases with time.


Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3194
Author(s):  
Adrian Petris ◽  
Petronela Gheorghe ◽  
Tudor Braniste ◽  
Ion Tiginyanu

The ultrafast third-order optical nonlinearity of c-plane GaN crystal, excited by ultrashort (fs) high-repetition-rate laser pulses at 1550 nm, wavelength important for optical communications, is investigated for the first time by optical third-harmonic generation in non-phase-matching conditions. As the thermo-optic effect that can arise in the sample by cumulative thermal effects induced by high-repetition-rate laser pulses cannot be responsible for the third-harmonic generation, the ultrafast nonlinear optical effect of solely electronic origin is the only one involved in this process. The third-order nonlinear optical susceptibility of GaN crystal responsible for the third-harmonic generation process, an important indicative parameter for the potential use of this material in ultrafast photonic functionalities, is determined.


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