Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro- and nanoscale

2008 ◽  
Vol 103 (1) ◽  
pp. 014314 ◽  
Author(s):  
Haiyong Gao ◽  
Fawang Yan ◽  
Yang Zhang ◽  
Jinmin Li ◽  
Yiping Zeng ◽  
...  
Keyword(s):  
Output Power ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Light Output Power ◽  
Light Emitting ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

scholarly journals Performance of InGaN Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates with Modified Top-Tip Cone Shapes

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Hsu-Hung Hsueh ◽  
Sin-Liang Ou ◽  
Chiao-Yang Cheng ◽  
Dong-Sing Wuu ◽  
Ray-Hua Horng
Keyword(s):  
Light Emitting Diodes ◽  
Substrate Surface ◽  
Light Output ◽  
Chemical Vapor ◽  
Wet Etching ◽  
Light Output Power ◽  
Light Emitting ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

InGaN light-emitting diodes (LEDs) were fabricated on cone-shaped patterned sapphire substrates (PSSs) by using low-pressure metalorganic chemical vapor deposition. To enhance the crystal quality of the GaN epilayer and the optoelectronic performance of the LED device, the top-tip cone shapes of the PSSs were further modified using wet etching. Through the wet etching treatment, some dry-etched induced damage on the substrate surface formed in the PSS fabrication process can be removed to achieve a high epilayer quality. In comparison to the LEDs prepared on the conventional sapphire substrate (CSS) and cone-shaped PSS without wet etching, the LED grown on the cone-shaped PSS by performing wet etching for 3 min exhibited 55% and 10% improvements in the light output power (at 350 mA), respectively. This implies that the modification of cone-shaped PSSs possesses high potential for LED applications.

Improved Light Output Power of GaN-Based Light-Emitting Diodes Using Double Photonic Quasi-Crystal Patterns

2009 ◽  
Vol 30 (11) ◽  
pp. 1152-1154 ◽  
Author(s):  
Hung-Wen Huang ◽  
Chung-Hsiang Lin ◽  
Zhi-Kai Huang ◽  
Kang-Yuan Lee ◽  
Chang-Chin Yu ◽  
...  
Keyword(s):  
Output Power ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Light Output Power ◽  
Light Emitting

Electroluminescence Properties of Eu-doped GaN-based Light-emitting Diodes Grown by Organometallic Vapor Phase Epitaxy

2011 ◽  
Vol 1342 ◽  
Author(s):  
Atsushi Nishikawa ◽  
Naoki Furukawa ◽  
Dong-gun Lee ◽  
Kosuke Kawabata ◽  
Takanori Matsuno ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Output Power ◽  
Active Layer ◽  
Vapor Phase ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Active Layer Thickness ◽  
Organometallic Vapor Phase Epitaxy ◽  
Light Output Power ◽  
Light Emitting

ABSTRACTWe investigated the electroluminescence (EL) properties of Eu-doped GaN-based light-emitting diodes (LEDs) grown by organometallic vapor phase epitaxy (OMVPE). The thickness of the active layer was varied to increase the light output power. With increasing the active layer thickness, the light output power monotonically increased. The maximum light output power of 50 μW was obtained for an active layer thickness of 900 nm with an injected current of 20 mA, which is the highest value ever reported. The corresponding external quantum efficiency was 0.12%. The applied voltage for the LED operation also increased with the active layer thickness due to an increase in the resistance of the LED. Therefore, in terms of power efficiency, the optimized active layer thickness was around 600 nm. These results indicate that the optimization of the LED structure would effectively improve the luminescence properties.

Ni-assisted Fabrication of GaN Based Surface Nano-textured Light Emitting Diodes for Improved Light Output Power

2015 ◽  
Vol 15 (4) ◽  
pp. 454-461 ◽  
Author(s):  
Mumta Hena Mustary ◽  
Beo Deul Ryu ◽  
Min Han ◽  
Jong Han Yang ◽  
Volodymyr V. Lysak ◽  
...  
Keyword(s):  
Output Power ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Light Output Power ◽  
Light Emitting

Improved Light Output Power of GaN-based Light Emitting Diodes using Double Photonic Quasi-Crystal Patterned

2009 ◽  
Author(s):  
J. K. Huang ◽  
H. W. Huang ◽  
C. H. Lin ◽  
K. Y. Lee ◽  
C. C. Yu ◽  
...  
Keyword(s):  
Output Power ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Light Output Power ◽  
Light Emitting
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