scholarly journals Spin cast ferroelectric beta poly(vinylidene fluoride) thin films via rapid thermal annealing

2008 ◽  
Vol 92 (1) ◽  
pp. 012921 ◽  
Author(s):  
Seok Ju Kang ◽  
Youn Jung Park ◽  
Jinwoo Sung ◽  
Pil Sung Jo ◽  
Cheolmin Park ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Vinylidene Fluoride ◽  
Poly Vinylidene Fluoride

Effects of Annealing on the Optical and Electronic Properties of Poly (vinylidene fluoride-trifluoroethylene) Copolymer Thin Films

2009 ◽  
Vol 79-82 ◽  
pp. 919-922 ◽  
Author(s):  
Yu Xiang Li ◽  
Yan Wang ◽  
Qing Pu Wang ◽  
Chun Lei Ma
Keyword(s):  
Thin Films ◽  
Electronic Properties ◽  
Thermal Annealing ◽  
Annealing Time ◽  
Vinylidene Fluoride ◽  
Oxide Semiconductor ◽  
K Value ◽  
Spin Casting ◽  
Optical And Electronic Properties ◽  
Poly Vinylidene Fluoride

Thin films of vinylidene fluoride with trifluoroethylene [P(VDF-TrFE)] copolymer have been deposited onto bare Si and SiO2 by spin casting from methylethylketone solutions. The structures and optical and electronic properties for P(VDF-TrFE) films after vacuum and forming gas annealing were studied. The degree of structural order and the crystallinity determined by X-ray diffraction were increased with the thermal annealing time. Ellipsometry spectroscopy were employed to investigate the changes in the thickness, refractive indices n, and the anisotropic properties. The results reflected that the n was increased with the thermal annealing time and temperature, and the anisotropy of the annealed films was strengthened with the annealing time and temperature. Metal-polymer-(oxide)-semiconductor capacitors were used to measure the static dielectric constant K and interfacial electronic properties of P(VDF-TrFE) on Si which the K increase with film thickness and thermal annealing. The interface at Al-P(VDF-TrFE) and/or P(VDF-TrFE)-Si affect the K value which is sensitive for films thinner than 120 nm. The Si-P(VDF-TrFE) interface quality determined using capacitance-voltage and current-voltage measurementswas found to be improved after forming gas annealed.

L10 Ordering of FePt Thin Films by Rapid Thermal Annealing

2003 ◽  
Vol 27 (11) ◽  
pp. 1083-1086 ◽  
Author(s):  
H. Ito ◽  
T. Kusunoki ◽  
H. Saito ◽  
S. Ishio
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Fept Thin Films

Effect of rapid thermal annealing on sprayed Cu2SnS3 thin films for solar-cell application

2020 ◽  
Vol 59 (10) ◽  
pp. 105503
Author(s):  
Wafaa Magdy ◽  
Ayaka Kanai ◽  
F. A. Mahmoud ◽  
E. T. El Shenawy ◽  
S. A. Khairy ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solar Cell Application

Rapid Thermal Annealing Effects in CdTe (111) Thin Films Grown on GaAs (100) Substrates

1996 ◽  
Vol 35 (Part 1, No. 8) ◽  
pp. 4220-4224 ◽  
Author(s):  
M. D. Kim ◽  
T. W. Kang ◽  
M. S. Han ◽  
T. W. Kim
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Effects

Effect of Interface and Crystallinity on the Ferroelectric Properties of Poly(Vinylidene Fluoride-Trifluoroethylene) Copolymer Thin Films

2001 ◽  
Vol 665 ◽  
Author(s):  
Feng Xia ◽  
H.S. Xu ◽  
Babak Razavi ◽  
Q. M. Zhang
Keyword(s):  
Thin Films ◽  
Vinylidene Fluoride ◽  
Ferroelectric Properties ◽  
Large Change ◽  
Thickness Dependence ◽  
Dielectric Measurement ◽  
Switching Speed ◽  
Wide Range ◽  
Poly Vinylidene Fluoride ◽  
Polarization Level

ABSTRACTFerroelectric polymer thin films are attractive for a wide range of applications such as MEMS, IR sensors, and memory devices. We present the results of a recent investigation on the thickness dependence of the ferroelectric properties of poly(vinylidene fluoridetrifluoroethylene) copolymer spin cast films on electroded Si substrate. We show that as the film thickness is reduced, there exist two thickness regions. For films at thickness above 100 nm, the thickness dependence of the ferroelectric properties can be attributed to the interface effect. However, for thinner films, there is a large change in the ferroelectric properties such as the polarization level, the coercive field, and polarization switching speed, which is related to the large drop of the crystallinity in the ultrathin film region (below 100 nm). The results from Xray, dielectric measurement, and AFM all indicate that there is a threshold thickness at about 100 nm below which the crystallinity in the film reduces abruptly.

Rapid Thermal Transformation of A-15 Crystal Structure Metallic Thin Films

1995 ◽  
Vol 387 ◽  
Author(s):  
M. J. O'Keefe ◽  
C. L. Cerny
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Physical Vapor Deposition ◽  
Thermal Transformation ◽  
The Body ◽  
Cubic Phase ◽  
Body Centered Cubic ◽  
Body Center Cubic

AbstractPhysical vapor deposition of Group VI elements (Cr, Mo, W) can lead to the formation of a metastable A-15 crystal structure under certain processing conditions. Typically, a thermally induced transformation of the metastable A-15 structure into the equilibrium body centered cubic structure has been accomplished by conventional furnace annealing at T/Tm ≈ 0.3 from tens of minutes to several hours. In this study we report on the use of rapid thermal annealing to transform sputter deposited A- 15 crystal structure tungsten and chromium thin films into body centered cubic films within the same temperature range but at times on the order of one minute. The minimum annealing times and temperatures required for complete transformation of the A-15 phase into the BCC phase varied from sample to sample, indicating that the transformation was dependent on the film characteristics. The electrical resistivity of A-15 Cr and W films was measured before and after rapid thermal annealing and was found to significantly decrease after transformation into the body center cubic phase.

STRUCTURAL CHARACTERISTICS OF (Ba,Sr)TiO3 THIN FILMS BY RAPID THERMAL ANNEALING

2007 ◽  
Vol 14 (01) ◽  
pp. 141-145
Author(s):  
Q. Y. ZHANG ◽  
S. W. JIANG ◽  
Y. R. LI
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Heating Rate ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Rapid Heating ◽  
Structural Characteristics ◽  
High Heating Rate ◽  
Duration Time ◽  
Temperature Heating

The rapid thermal annealing (RTA) process was adapted to crystallize the amorphous ( Ba,Sr ) TiO 3 thin films prepared on Si (111) substrates by RF magnetic sputtering deposition. The effect of annealing temperature, heating rate and duration time on crystallization was studied through X-ray diffraction and atomic force microscopy. The result shows that the crystallinity and grain size were strongly dependent on the temperature, heating rate, and duration time. Higher heating rate leads to smaller grain size. In high heating rate, the grain size shows different dependence of temperature from that of low heating rate. For a heating rate of 50°C/s, the grain size decreased with temperature increasing below 700°C, while after that temperature, the grain size increased slightly with the temperature increasing. At a certain temperature, the crystallinity and surface roughness improved with increase in annealing time, while grain size changed little. The effect of rapid heating rate on the nucleation and grain growth has been discussed, which contributes to the limited grain size of the annealed ( Ba,Sr ) TiO 3 thin films.

Rapid thermal annealing of YBaCuO thin films sputtered on substrates

1990 ◽  
Vol 164-165 ◽  
pp. 359-365 ◽  
Author(s):  
J. Baixeras ◽  
F. Carrie ◽  
F.Hosseini Teherani ◽  
A. Kreisler
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing
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