Thermoelectric properties of directionally solidified half-Heusler compound NbCoSn alloys

2008 ◽  
Vol 92 (1) ◽  
pp. 012105 ◽  
Author(s):  
Yoshisato Kimura ◽  
Yukio Tamura ◽  
Takuji Kita
Keyword(s):  
Thermoelectric Properties ◽  
Directionally Solidified ◽  
Heusler Compound

Enhanced thermoelectric properties of Hf doped half-Heusler compound NbFeSb

2020 ◽  
Author(s):  
Narender Kumar ◽  
Hardev S. Saini ◽  
Nisha ◽  
Mukhtiyar Singh ◽  
Manish K. Kashyap
Keyword(s):  
Thermoelectric Properties ◽  
Heusler Compound

Tailoring thermoelectric properties of Zr0.43Hf0.57NiSn half-Heusler compound by defect engineering

Rare Metals ◽  
2020 ◽  
Vol 39 (6) ◽  
pp. 659-670
Author(s):  
Krzysztof Gałązka ◽  
Wenjie Xie ◽  
Sascha Populoh ◽  
Myriam H. Aguirre ◽  
Songhak Yoon ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Defect Engineering ◽  
Heusler Compound

High Temperature Thermoelectric Properties of Half-Heusler Compound PtYSb

2013 ◽  
Vol 52 (4R) ◽  
pp. 041804 ◽  
Author(s):  
Guanghe Li ◽  
Ken Kurosaki ◽  
Yuji Ohishi ◽  
Hiroaki Muta ◽  
Shinsuke Yamanaka
Keyword(s):  
High Temperature ◽  
Thermoelectric Properties ◽  
Heusler Compound

The electronic and thermoelectric properties of a d2/d0type tetragonal half-Heusler compound, HfSiSb: a FP-LAPW method

2017 ◽  
Vol 4 (10) ◽  
pp. 105506 ◽  
Author(s):  
H Joshi ◽  
D P Rai ◽  
E Deligoz ◽  
H B Ozisik ◽  
R K Thapa
Keyword(s):  
Thermoelectric Properties ◽  
Heusler Compound

scholarly journals Synthesis and thermoelectric properties of n-type half-Heusler compound VCoSb with valence electron count of 19

2016 ◽  
Vol 654 ◽  
pp. 321-326 ◽  
Author(s):  
Hao Zhang ◽  
Yumei Wang ◽  
Lihong Huang ◽  
Shuo Chen ◽  
Heshab Dahal ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Valence Electron ◽  
Heusler Compound

scholarly journals Improving the Thermoelectric Properties of the Half-Heusler Compound VCoSb by Vanadium Vacancy

Materials ◽  
2019 ◽  
Vol 12 (10) ◽  
pp. 1637 ◽  
Author(s):  
Lihong Huang ◽  
Junchen Wang ◽  
Xiaobo Mo ◽  
Xiaobo Lei ◽  
Sude Ma ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Secondary Phase ◽  
Thermoelectric Performance ◽  
Heusler Compound

The effects of V vacancy on the thermoelectric performance of the half-Heusler compound VCoSb have been investigated in this study. A certain amount of CoSb secondary phase is generated in the VCoSb matrix when the content of V vacancy is more than 0.1 at%. According to the results, a ZT value of 0.6, together with a power factor of 29 μW cm−1 K−2 at 873 K, were achieved for the nonstoichiometric sample V0.9CoSb. This proved that moderate V vacancy could improve the thermoelectric (TE) properties of VCoSb. The noticeable improvements are mainly owing to the incremental Seebeck coefficient, which may benefit from the optimized carrier concentration. However, too much V vacancy will result in more CoSb impurity and deteriorate the TE performances of VCoSb owing to the increased thermal conductivity.

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