scholarly journals Electrical and optical properties of phosphorus-doped p-type ZnO films grown by metalorganic chemical vapor deposition

2008 ◽  
Vol 103 (2) ◽  
pp. 023708 ◽  
Author(s):  
X. H. Pan ◽  
J. Jiang ◽  
Y. J. Zeng ◽  
H. P. He ◽  
L. P. Zhu ◽  
...  
2006 ◽  
Vol 21 (7) ◽  
pp. 1632-1637 ◽  
Author(s):  
Maria Losurdo ◽  
Maria M. Giangregorio ◽  
A. Sacchetti ◽  
Pio Capezzuto ◽  
Giovanni Bruno ◽  
...  

ZnO thin films have been grown by metalorganic chemical vapor deposition (MOCVD) and plasma-assisted (PA) MOCVD on c-axis-oriented sapphire (0001) and Si (001) substrates using the novel Zn(2-thenoyltrifluoroacetonate)2·N,N,N′,N′-tetramethylethylendiamine precursor. The structural, morphological, and optical properties of ZnO films have been investigated. The results show that the O2 PA growth results in highly c-axis-oriented hexagonal ZnO thin films also on cubic substrates. PA-MOCVD ZnO films have good optical properties, as inferred by the presence of a sharp and intense exciton in the dielectric function.


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