Ballistic electron emission spectroscopy/microscopy of self-assembled InAs quantum dots of different sizes embedded in GaAs∕AlGaAs heterostructure

2008 ◽  
Vol 92 (1) ◽  
pp. 012101 ◽  
Author(s):  
J. Walachová ◽  
J. Zelinka ◽  
V. Malina ◽  
J. Vaniš ◽  
F. Šroubek ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Emission ◽  
Emission Spectroscopy ◽  
Inas Quantum Dots ◽  
Ballistic Electron ◽  
Self Assembled

Study of InAs quantum dots in AlGaAs∕GaAs heterostructure by ballistic electron emission microscopy/spectroscopy

2007 ◽  
Vol 91 (4) ◽  
pp. 042110 ◽  
Author(s):  
J. Walachová ◽  
J. Zelinka ◽  
V. Malina ◽  
J. Vaniš ◽  
F. Šroubek ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Emission ◽  
Ballistic Electron Emission Microscopy ◽  
Inas Quantum Dots ◽  
Ballistic Electron ◽  
Emission Microscopy

Effect of incorporating an InAlAs layer on electron emission in self-assembled InAs quantum dots

2006 ◽  
Vol 99 (1) ◽  
pp. 014303 ◽  
Author(s):  
J. F. Chen ◽  
R. S. Hsiao ◽  
M. F. Hsieh ◽  
J. S. Wang ◽  
J. Y. Chi
Keyword(s):  
Quantum Dots ◽  
Electron Emission ◽  
Inas Quantum Dots ◽  
Self Assembled

Imaging and Spectroscopy of Single InAs Self-Assembled Quantum Dots using Ballistic Electron Emission Microscopy

1996 ◽  
Vol 77 (26) ◽  
pp. 5268-5271 ◽  
Author(s):  
M. E. Rubin ◽  
G. Medeiros-Ribeiro ◽  
J. J. O'Shea ◽  
M. A. Chin ◽  
E. Y. Lee ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Emission ◽  
Ballistic Electron Emission Microscopy ◽  
Ballistic Electron ◽  
Emission Microscopy ◽  
Self Assembled ◽  
Imaging And Spectroscopy

Ballistic Electron Emission Luminescence of InAs Quantum Dots Embedded in a GaAs/AlxGa1−xAs Heterostructure

2004 ◽  
Vol 838 ◽  
Author(s):  
Wei Yi ◽  
Ian Appelbaum ◽  
Kasey J. Russell ◽  
Venkatesh Narayanamurti ◽  
Micah P. Hanson ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Tunnel Junction ◽  
Electron Emission ◽  
Single Photon ◽  
Photon Counting ◽  
Hot Electron ◽  
Inas Quantum Dots ◽  
Ballistic Electron ◽  
Collector Voltage ◽  
Photon Counting Mode

ABSTRACTBallistic electron emission luminescence (BEEL) is a further development of ballistic electron emission microscopy (BEEM) combining three-terminal hot electron injection and interband radiative recombination in direct-gap semiconductor materials. By using a planar tunnel-junction emitter rather than a STM tip, a spectrographic analysis of the induced electroluminescence can be performed with the help of much higher current injection level. We demonstrate the operational principle of BEEL in a GaAs/AlxGa1−xAs heterostructure with a layer of InAs quantum dots (QDs) as the optical active layer. The wavelength-resolved BEEL spectra from planar tunnel-junction devices disclose the QD luminescence as a peak near 1.34 eV accompanied with a linear quantum-confined Stark shift. At higher collector voltage, luminescence from bulk states of GaAs peaked at 1.48 eV is observed. The spectrally integrated BEEL intensity as a function of collector voltage fits well with the results from STM tip injection, which is measured in a single-photon-counting mode. Measurement of ballistic electron current spectroscopy is made possible by freezing out the thermionic leakage current at low temperatures. Our results indicate that it is feasible to simultaneously acquire topographic, electronic and photonic information of buried light-emitting semiconductor heterostructures.

Magnetotunneling spectroscopy imaging of electron wave functions in self-assembled InAs quantum dots

2001 ◽  
Vol 171 (12) ◽  
pp. 1365
Author(s):  
E.E. Vdovin ◽  
Yu.N. Khanin ◽  
Yu.V. Dubrovskii ◽  
A. Veretennikov ◽  
A. Levin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Wave Functions ◽  
Electron Wave ◽  
Inas Quantum Dots ◽  
Self Assembled
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