scholarly journals Physical and chemical sputterings of solid surfaces irradiated by ethanol cluster ion beams

2008 ◽  
Vol 79 (2) ◽  
pp. 02C503 ◽  
Author(s):  
Gikan H. Takaoka ◽  
Masakazu Kawashita ◽  
Takeshi Okada
Keyword(s):  
Ion Beams ◽  
Solid Surfaces ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
Physical And Chemical

Irradiation Effects of Methanol Cluster Ion Beams on Solid Surfaces

2007 ◽  
Vol 1020 ◽  
Author(s):  
Gikan Takaoka ◽  
Masakazu Kawashita ◽  
Takeshi Okada
Keyword(s):  
Ion Irradiation ◽  
Ion Beams ◽  
Solid Surfaces ◽  
Reaction Products ◽  
Si Substrates ◽  
Chemical Sputtering ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
Sputtering Yield ◽  
Acceleration Voltage

AbstractIn order to investigate the interactions of methanol cluster ion beams with solid surfaces, Si substrates and SiO2 films were irradiated at different acceleration voltages. The sputtered depth increased with increase of the acceleration voltage. When the acceleration voltage was 9 kV, the sputtered depths of Si and SiO2 at a dose of 1×1016ions/cm2 were 1497.1 nm and 147.8 nm, respectively. The selectivity between Si and SiO2 surfaces arose from the volatility of the reaction products. Furthermore, the sputtering yield for the Si surface was approximately seven hundreds times larger than that by Ar monomer ion beams. This suggested that chemical sputtering was predominant for the methanol cluster ion irradiation. In addition, the etching and cleaning process by the methanol cluster ion irradiation was performed on the Si surfaces contaminated with a small amount of metal particles such as Au and Al. Thus, methanol cluster ion beams have unique characteristics such as surface etching and cleaning with high sputtering yield and smooth surface.

scholarly journals Irradiation effects on solid surfaces by water cluster ion beams

Vacuum ◽  
2009 ◽  
Vol 84 (5) ◽  
pp. 501-504 ◽  
Author(s):  
Hiromichi Ryuto ◽  
Keiji Tada ◽  
Gikan H. Takaoka
Keyword(s):  
Water Cluster ◽  
Ion Beams ◽  
Solid Surfaces ◽  
Irradiation Effects ◽  
Cluster Ion Beams ◽  
Cluster Ion

Bombarding Effects of Gas Cluster Ion Beams on Sapphire Surfaces; Characteristics of Modified Layers and their Mechanical and Optical Properties

1995 ◽  
Vol 396 ◽  
Author(s):  
D. Takeuchi ◽  
J. Matsuo ◽  
I. Yamada
Keyword(s):  
Ion Beams ◽  
Solid Surfaces ◽  
Cluster Ions ◽  
Cluster Bombardment ◽  
Damage Layer ◽  
Significant Difference ◽  
Unique Material ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
Average Size

AbstractGas cluster ions contain tens, hundreds or even more than thousands of atoms or molecules as ionized particles. It has been shown that the bombarding effects of gas cluster ions on solid surfaces are quite different from those by monomer ions and involve unique material processing characteristics. In order to make clear the bombarding effects, a study of surface modification of sapphire by Ar and CO2 gas cluster ion beams has been performed. Thickness of the damaged layer and surface roughness produced on sapphire depends strongly on cluster ion energy. Damage layer thickness on a sapphire surface bombarded by 150 keV clusters with average size of about 3000 atoms was 40Å. No significant difference was observed in IR transmittance after cluster bombardment. Mechanical properties of sapphire surfaces can be changed by cluster irradiation at a dose of 1011 ions/cm2.

SPUTTERING WITH GAS CLUSTER-ION BEAMS

1996 ◽  
Vol 03 (01) ◽  
pp. 1017-1021 ◽  
Author(s):  
J. MATSUO ◽  
M. AKIZUKI ◽  
J. NORTHBY ◽  
G.H. TAKAOKA ◽  
I. YAMADA
Keyword(s):  
Ion Irradiation ◽  
Removal Rate ◽  
Ion Beam ◽  
Solid Surfaces ◽  
Silicon Surfaces ◽  
Cluster Ions ◽  
Mass Filter ◽  
Cluster Bombardment ◽  
Cluster Ion Beams ◽  
Cluster Ion

A high-current (~100 nA) cluster-ion-beam equipment with a new mass filter has been developed to study the energetic cluster-bombardment effects on solid surfaces. A dramatic reduction of Cu concentration on silicon surfaces has been achieved by 20-keV Ar cluster (N~3000) ion bombardment. The removal rate of Cu with cluster ions is two orders of magnitude higher than that with monomer ions. A significantly higher sputtering yield is expected for cluster-ion irradiation. An energetic cluster-ion beam is quite suitable for removal of metal.

Cu pattern etching by oxygen gas cluster ion beams with acetic acid vapor

2014 ◽  
Author(s):  
N. Toyoda ◽  
M. Kojima ◽  
R. Hinoura ◽  
A. Yamaguchi ◽  
K. Hara ◽  
...  
Keyword(s):  
Acetic Acid ◽  
Ion Beams ◽  
Acid Vapor ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
Oxygen Gas
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