scholarly journals Hydrogen concentration and bonding configuration in polycrystalline diamond films: From micro-to nanometric grain size

2007 ◽  
Vol 102 (11) ◽  
pp. 113516 ◽  
Author(s):  
Sh. Michaelson ◽  
O. Ternyak ◽  
R. Akhvlediani ◽  
A. Hoffman ◽  
A. Lafosse ◽  
...  
Keyword(s):  
Grain Size ◽  
Hydrogen Concentration ◽  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Bonding Configuration

Characterization of homoepitaxial diamond films by Electron microscopy

1991 ◽  
Vol 49 ◽  
pp. 880-881
Author(s):  
D.P. Malta ◽  
S.A. Willard ◽  
R.A. Rudder ◽  
G.C. Hudson ◽  
J.B. Posthill ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Surface Defects ◽  
Substrate Surface ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Large Degree ◽  
Rf Plasma ◽  
Semiconducting Diamond

Semiconducting diamond films have the potential for use as a material in which to build active electronic devices capable of operating at high temperatures or in high radiation environments. A major goal of current device-related diamond research is to achieve a high quality epitaxial film on an inexpensive, readily available, non-native substrate. One step in the process of achieving this goal is understanding the nucleation and growth processes of diamond films on diamond substrates. Electron microscopy has already proven invaluable for assessing polycrystalline diamond films grown on nonnative surfaces.The quality of the grown diamond film depends on several factors, one of which is the quality of the diamond substrate. Substrates commercially available today have often been found to have scratched surfaces resulting from the polishing process (Fig. 1a). Electron beam-induced current (EBIC) imaging shows that electrically active sub-surface defects can be present to a large degree (Fig. 1c). Growth of homoepitaxial diamond films by rf plasma-enhanced chemical vapor deposition (PECVD) has been found to planarize the scratched substrate surface (Fig. 1b).

Polycrystalline Diamond Films and Single Crystal Diamonds Grown by Combustion Synthesis

CIRP Annals ◽  
1990 ◽  
Vol 39 (1) ◽  
pp. 585-588 ◽  
Author(s):  
R. Komanduri ◽  
L.L. Fehrenbacher ◽  
L.M. Hanssen ◽  
A. Morrish ◽  
K.A. Snail ◽  
...  
Keyword(s):  
Single Crystal ◽  
Combustion Synthesis ◽  
Diamond Films ◽  
Polycrystalline Diamond

Low energy ion-induced damage of polycrystalline diamond films

1994 ◽  
Vol 3 (4-6) ◽  
pp. 663-671 ◽  
Author(s):  
J. Ullmann ◽  
A. Weber ◽  
B. Mainz ◽  
J. Stiegler ◽  
T. Schuhrke
Keyword(s):  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Low Energy

On the Nature of Grain Boundaries in Nanocrystalline Diamond

MRS Bulletin ◽  
1998 ◽  
Vol 23 (9) ◽  
pp. 36-41 ◽  
Author(s):  
P. Keblinski ◽  
D. Wolf ◽  
F. Cleri ◽  
S.R. Phillpot ◽  
H. Gleiter
Keyword(s):  
Grain Size ◽  
Grain Boundaries ◽  
Active Sites ◽  
Critical Role ◽  
Diamond Films ◽  
Structural Disorder ◽  
Nanocrystalline Diamond ◽  
High Wear Resistance ◽  
Atomic Structures ◽  
Nanocrystalline Diamond Films

The low-pressure synthesis of rather pure nanocrystalline diamond films from fullerene precursors suggests that for a small enough grain size the diamond structure may be energetically preferred over graphite. Because of the small grain size of typically about 15 nm in these films, a significant fraction of the carbon atoms is situated in the grain boundaries (GBs). The surprisingly high wear resistance of these films even after the substrate is removed and their high corrosion resistance suggest that the grains are strongly bonded. Grain-boundary carbon is also believed to be responsible for the absorption and scattering of light in these films, for their electrical conductivity, and for their electron-emission properties. In spite of all these indications of a critical role played by GB carbon in achieving the remarkable properties of nanocrystalline diamond films, to date the atomic structures of the GBs are essentially not known.It is well-known that the electronic and optical properties of polycrystalline silicon films are significantly affected by the presence of GBs. For example GBs can provide active sites for the recombination of electron-hole pairs in photovoltaic applications. Also, in electronic devices such as thin-film transistors, GBs are known to play an important role. Because of silicon's strong energetic preference for sp3 hybridization over other electronic configurations, the structural disorder in silicon GBs is accommodated by a distortion of the tetrahedral nearestneighbor bonds and in the extreme by the creation of dangling bonds—that is, of three-coordinated Si atoms each having one unsaturated, bound electron in an otherwise more or less tetrahedrally coordinated environment.

Investigation on the Machining of Thick Diamond Films by EDM Together with Mechanical Polishing

2007 ◽  
Vol 24-25 ◽  
pp. 377-382
Author(s):  
Rong Fa Chen ◽  
Dun Wen Zuo ◽  
Yu Li Sun ◽  
Wen Zhuang Lu ◽  
D.S. Li ◽  
...  
Keyword(s):  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Mechanical Polishing ◽  
Polishing Process ◽  
Two Stage ◽  
Efficient Manner ◽  
Raman Scattering Spectroscopy ◽  
Electro Discharge Machining ◽  
Diamond Polishing ◽  
Cost Efficient

Although research on various diamond polishing techniques has been carried for years, some issues still need to be examined in order to facilitate application on large areas in a cost-efficient manner. A compositive technique for machining efficiently thick diamond films prepared by DC plasma arc jet is reported in the present paper. A two-stage polishing was applied on thick polycrystalline diamond films, by employing first electro-discharge machining (EDM) for rough polishing and subsequently mechanical polishing for finishing operations. Experimental results obtained clearly indicate the applicability of the proposed two-stage technique for fabricating transparent diamond films that can be used for the production of X-ray windows. Appropriate etching with EDM is an effective pretreatment method for enhancing the efficiency of rough polishing process in mechanical polishing of thick diamond film. The machined surfaces of diamond films are studied by Scanning Electron Microscope (SEM) and Raman Scattering Spectroscopy (Raman).

YBa2Cu3O7 Thin Films on Polycrystalline Diamond Films with Buffer Layers

1992 ◽  
Vol 275 ◽  
Author(s):  
G. Cui ◽  
C. P. Beetz ◽  
B. A. Lincoln ◽  
P. S. Kirlin
Keyword(s):  
Thin Films ◽  
Diamond Films ◽  
Rf Sputtering ◽  
Polycrystalline Diamond ◽  
Fast Response ◽  
Buffer Layers ◽  
Multichip Modules ◽  
Ir Detectors ◽  
Ybco Films ◽  
First Time

ABSTRACTThe deposition of in-situ YBa2CU3O7-δ Superconducting films on polycrystalline diamond thin films has been demonstrated for the first time. Three different composite buffer layer systems have been explored for this purpose: (1) Diamond/Zr/YSZ/YBCO, (2) Diamond/Si3N4/YSZ/YBCO, and (3) Diamond/SiO2/YSZ/YBCO. The Zr was deposited by dc sputtering on the diamond films at 450 to 820 °C. The YSZ was deposited by reactive on-axis rf sputtering at 680 to 750 °C. The Si3N4 and SiO2 were also deposited by on-axis rf sputtering at 400 to 700 °C. YBCO films were grown on the buffer layers by off-axis rf sputtering at substrate temperatures between 690 °C and 750 °C. In all cases, the as-deposited YBCO films were superconducting above 77 K. This demonstration enables the fabrication of low heat capacity, fast response time bolometric IR detectors and paves the way for the use of HTSC on diamond for interconnect layers in multichip modules.

Trap-assisted photon-enhanced thermionic emission from polycrystalline diamond films

2015 ◽  
Vol 212 (11) ◽  
pp. 2583-2588 ◽  
Author(s):  
S. Elfimchev ◽  
M. Chandran ◽  
R. Akhvlediani ◽  
A. Hoffman
Keyword(s):  
Diamond Films ◽  
Thermionic Emission ◽  
Polycrystalline Diamond
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