Calculation of extracted ion beam particle distribution including within-extractor collisions from H-alpha Doppler shift measurements

2008 ◽  
Vol 79 (2) ◽  
pp. 02A704 ◽  
Author(s):  
Tae-Seong Kim ◽  
Jinchoon Kim ◽  
Sang Ryul In ◽  
Seung Ho Jeong
Keyword(s):  
Doppler Shift ◽  
Particle Distribution ◽  
Ion Beam ◽  
Beam Particle

Unmagnetized diffusion for azimuthally symmetric wave and particle distributions

1988 ◽  
Vol 40 (1) ◽  
pp. 179-198 ◽  
Author(s):  
P. B. Dusenbery ◽  
L. R. Lyons
Keyword(s):  
Magnetic Field ◽  
Diffusion Coefficients ◽  
Pitch Angle ◽  
Particle Distribution ◽  
Ion Beam ◽  
Distribution Model ◽  
Sound Waves ◽  
Linear Diffusion ◽  
Particle Distributions ◽  
Diffusion Rates

The general equations describing the quasi-linear diffusion of charged particles from resonant interactions with a spectrum of electrostatic waves are given, assuming the wave and particle distributions to be azimuthally symmetric. These equations apply when a magnetic field organizes the wave and particle distributions in space, but when the local interaction between the waves and particles can be evaluated assuming that no magnetic field is present. Such diffusion is, in general, two-dimensional and is similar to magnetized diffusion. The connection between the two types of diffusion is presented. In order to apply the general quasi-linear diffusion coefficients in pitch angle and speed, a specific particle-distribution model is assumed. An expression for the unmagnetized dielectric function is derived and evaluated for the assumed particle distribution model. It is found that slow-mode ion-sound waves are unstable for the range of plasma parameters considered. A qualitative interpretation of unmagnetized diffusion is presented. The diffusion coefficients are then evaluated for resonant ion interactions with ion-sound waves. The results illustrate how resonant ion diffusion rates vary with pitch angle and speed, and how the diffusion rates depend upon the distribution of wave energy in k–space. The results of this study have relevance for ion beam heating in the plasma-sheet boundary layer and upstream of the earth's bow shock.

scholarly journals Synthesizing a four-dimensional beam particle distribution frommultiple two-dimensional views

2002 ◽  
Author(s):  
A. Friedman ◽  
D.P. Grote ◽  
C.M. Celata ◽  
J.W. Staples
Keyword(s):  
Particle Distribution ◽  
Two Dimensional ◽  
Beam Particle

Evaluation of beam divergence of a negative hydrogen ion beam using Doppler shift spectroscopy diagnostics

2018 ◽  
Vol 123 (4) ◽  
pp. 043307 ◽  
Author(s):  
A. J. Deka ◽  
P. Bharathi ◽  
K. Pandya ◽  
M. Bandyopadhyay ◽  
M. Bhuyan ◽  
...  
Keyword(s):  
Doppler Shift ◽  
Ion Beam ◽  
Hydrogen Ion ◽  
Beam Divergence ◽  
Negative Hydrogen Ion

A CONVENIENT DOPPLER SHIFT METHOD FOR DETERMINING THE VELOCITY OF A FAST ION BEAM

1979 ◽  
Vol 40 (C1) ◽  
pp. C1-161-C1-162 ◽  
Author(s):  
S. Huldt ◽  
L. J. Curtis ◽  
R. M. Schectman
Keyword(s):  
Doppler Shift ◽  
Ion Beam ◽  
Shift Method ◽  
Fast Ion

Measurement of the transverse Doppler shift using a stored relativistic7Li+ ion beam

1992 ◽  
Vol 342 (4) ◽  
pp. 455-461 ◽  
Author(s):  
R. Klein ◽  
R. Grieser ◽  
L. Hoog ◽  
G. Huber ◽  
I. Klaft ◽  
...  
Keyword(s):  
Doppler Shift ◽  
Ion Beam

Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

Effects of Ion Beam Milling on Surface Topography

1973 ◽  
Vol 31 ◽  
pp. 84-85
Author(s):  
P.G. Pawar ◽  
P. Duhamel ◽  
G.W. Monk
Keyword(s):  
Surface Topography ◽  
Ion Beam ◽  
Solid Material ◽  
Beam Current ◽  
Atomic Mass ◽  
Micro Milling ◽  
Ion Milling ◽  
Controlled Atmospheres ◽  
Milling Operations ◽  
Sufficient Energy

A beam of ions of mass greater than a few atomic mass units and with sufficient energy can remove atoms from the surface of a solid material at a useful rate. A system used to achieve this purpose under controlled atmospheres is called an ion miliing machine. An ion milling apparatus presently available as IMMI-III with a IMMIAC was used in this investigation. Unless otherwise stated, all the micro milling operations were done with Ar+ at 6kv using a beam current of 100 μA for each of the two guns, with a specimen tilt of 15° from the horizontal plane.It is fairly well established that ion bombardment of the surface of homogeneous materials can produce surface topography which resembles geological erosional features.

Nucleation and Early Growth of Sputtered thin Films

1970 ◽  
Vol 28 ◽  
pp. 516-517
Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Water Cooling ◽  
Stages Of Growth ◽  
Lens Assembly ◽  
Microscope Technique ◽  
Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

SEM analysis of DC magnetron sputtered beryllium films

1988 ◽  
Vol 46 ◽  
pp. 960-961
Author(s):  
E. F. Lindsey ◽  
C. W. Price ◽  
E. L. Pierce ◽  
E. J. Hsieh
Keyword(s):  
Fine Structure ◽  
Electron Emission ◽  
Secondary Electron ◽  
Low Voltage ◽  
Ion Beam ◽  
Secondary Electron Emission ◽  
Sem Analysis ◽  
Fused Silica ◽  
Grain Structure ◽  
Silica Substrate

Columnar structures produced by DC magnetron sputtering can be altered by using RF biased sputtering or by exposing the film to nitrogen pulses during sputtering, and these techniques are being evaluated to refine the grain structure in sputtered beryllium films deposited on fused silica substrates. Beryllium is brittle, and fractures in sputtered beryllium films tend to be intergranular; therefore, a convenient technique to analyze grain structure in these films is to fracture the coated specimens and examine them in an SEM. However, fine structure in sputtered deposits is difficult to image in an SEM, and both the low density and the low secondary electron emission coefficient of beryllium seriously compound this problem. Secondary electron emission can be improved by coating beryllium with Au or Au-Pd, and coating also was required to overcome severe charging of the fused silica substrate even at low voltage. The coating structure can obliterate much of the fine structure in beryllium films, but reasonable results were obtained by using the high-resolution capability of an Hitachi S-800 SEM and either ion-beam coating with Au-Pd or carbon coating by thermal evaporation.

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

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