Epitaxial thin films of multiferroic GaFeO3 on conducting indium tin oxide (001) buffered yttrium-stabilized zirconia (001) by pulsed laser deposition

2007 ◽  
Vol 91 (20) ◽  
pp. 202504 ◽  
Author(s):  
M. Trassin ◽  
N. Viart ◽  
G. Versini ◽  
J.-L. Loison ◽  
J.-P. Vola ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Epitaxial Thin Films ◽  
Stabilized Zirconia

Pulsed Laser Deposition of Low-Resistivity Indium Tin Oxide Thin Films at Low Substrate Temperature

1999 ◽  
Vol 38 (Part 1, No. 5A) ◽  
pp. 2710-2716 ◽  
Author(s):  
Frederick Ojo Adurodija ◽  
Hirokazu Izumi ◽  
Tsuguo Ishihara ◽  
Hideki Yoshioka ◽  
Hiroshi Matsui ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxide Thin Films ◽  
Low Resistivity

Pulsed Laser Deposition of Bi4Ti3O12 Thin Films on Indium Tin Oxide Coated Glass

1994 ◽  
Vol 343 ◽  
Author(s):  
H-J. Cho ◽  
William Jo ◽  
T. W. Noh
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Leakage Current ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Chemical Compositions ◽  
Coated Glass

ABSTRACTBi4Ti3O12 thin films have been grown on indium tin oxide coated glass by pulsed laser deposition. The films are rapidly thermal annealed at 650 °C in various kinds of ambients. X-ray diffraction and scanning electron microscopy are used to investigate crystallization and microstructures, respectively. Using Auger electron microscopy, chemical compositions and depth profiles are examined. Optical and current-voltage characteristics measurements of the films show that their transmittance and leakage current behaviors are strongly dependent upon the microstructures. O2 partial pressure in the rapid thermal annealing process is found to be an important parameter which determines crystallization, microstructures, and leakage current behaviors of the Bi4Ti3O12 thin films.

Pulsed laser deposition of conductive indium tin oxide thin films

2012 ◽  
Vol 48 (10) ◽  
pp. 1020-1025 ◽  
Author(s):  
I. A. Petukhov ◽  
A. N. Shatokhin ◽  
F. N. Putilin ◽  
M. N. Rumyantseva ◽  
V. F. Kozlovskii ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxide Thin Films

Low-temperature growth of low-resistivity indium-tin-oxide thin films by pulsed laser deposition

Vacuum ◽  
2000 ◽  
Vol 59 (2-3) ◽  
pp. 641-648 ◽  
Author(s):  
F.O Adurodija ◽  
H Izumi ◽  
T Ishihara ◽  
H Yoshioka ◽  
H Matsui ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Pulsed Laser Deposition ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Low Resistivity
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