Growth of a-plane GaN on lattice-matched ZnO substrates using a room-temperature buffer layer

2007 ◽  
Vol 91 (19) ◽  
pp. 191905 ◽  
Author(s):  
Atsushi Kobayashi ◽  
Satoshi Kawano ◽  
Kohei Ueno ◽  
Jitsuo Ohta ◽  
Hiroshi Fujioka ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Room Temperature ◽  
Lattice Matched

Carrier Dynamics and Defects in Bulk 1eV InGaAsNSb Materials and InGaAs Layers with MBL Grown by MOVPE for Multi-junction Solar Cells

2013 ◽  
Vol 1493 ◽  
pp. 245-251 ◽  
Author(s):  
Yongkun Sin ◽  
Stephen LaLumondiere ◽  
Brendan Foran ◽  
William Lotshaw ◽  
Steven C. Moss ◽  
...  
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Triple Junction ◽  
Gaas Substrate ◽  
High Performance ◽  
Carrier Dynamics ◽  
Dilute Nitride ◽  
Metamorphic Buffer ◽  
Lattice Matched

ABSTRACTMulti-junction III-V solar cells are based on a triple-junction design that employs a 1eV bottom junction grown on the GaAs substrate with a GaAs middle junction and a lattice-matched InGaP top junction. There are two possible approaches implementing the triple-junction design. The first approach is to utilize lattice-matched dilute nitride materials such as InGaAsN(Sb) and the second approach is to utilize lattice-mismatched InGaAs employing a metamorphic buffer layer (MBL). Both approaches have a potential to achieve high performance triple-junction solar cells. A record efficiency of 43.5% was achieved from multi-junction solar cells using the first approach [1] and the solar cells using the second approach yielded an efficiency of 41.1% [2]. We studied carrier dynamics and defects in bulk 1eV InGaAsNSb materials and InGaAs layers with MBL grown by MOVPE for multi-junction solar cells.

GalnAsSb Materials for Thermophotovoltaics

1996 ◽  
Vol 450 ◽  
Author(s):  
C. A. Wang ◽  
G. W. Turner ◽  
M. J. Manfra ◽  
H. K. Choi ◽  
D. L. Spears
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Organometallic Vapor Phase Epitaxy ◽  
Room Temperature Photoluminescence ◽  
P Type ◽  
First Time ◽  
Lattice Matched ◽  
Comparable Quality ◽  
Peak Emission

ABSTRACTGai1−xInxASySb1-y (0.06 < x < 0.18, 0.05 < y < 0.14) epilayers were grown lattice-matched to GaSb substrates by low-pressure organometallic vapor phase epitaxy (OMVPE) using triethylgallium, trimethylindium, tertiarybutylarsine, and trimethylantimony. These epilayers have a mirror-like surface morphology, and exhibit room temperature photoluminescence (PL) with peak emission wavelengths (λP,300K) out to 2.4 μm. 4K PL spectra have a full width at half-maximum of 11 meV or less for λP,4K < 2.1 μm (λP,300K = 2.3 μm). Nominally undoped layers are p-type with typical 300K hole concentration of 9 × 1015 cm−3 and mobility ∼ 450 to 580 cm2/V-s for layers grown at 575°C. Doping studies are reported for the first time for GalnAsSb layers doped n type with diethyltellurium and p type with dimethylzinc. Test diodes of p-GalnAsSb/n-GaSb have an ideality factor that ranges from 1.1 to 1.3. A comparison of electrical, optical, and structural properties of epilayers grown by molecular beam epitaxy indicates OMVPE-grown layers are of comparable quality.

Thermal Strain Study of Almost Lattice-Matched Epitaxial InuGa1-uAs1-vP1-v Films on InP(100) Substrates

1989 ◽  
Vol 160 ◽  
Author(s):  
G. Bai ◽  
M-A. Nicolet ◽  
S.-J. Kim ◽  
R.G. Sobers ◽  
J.W. Lee ◽  
...  
Keyword(s):  
Room Temperature ◽  
Epitaxial Film ◽  
Lattice Mismatch ◽  
Thermal Strain ◽  
Growth Direction ◽  
Epitaxial Films ◽  
Double Crystal ◽  
X Ray ◽  
Lattice Matched ◽  
Coherent Interfaces

AbstractSingle layers of ~ 0.5µm thick InuGa1-uAs1-vPv (0.52 < u < 0.63 and 0.03 < v < 0.16) were grown epitaxially on InP(100) substrates by liquid phase epitaxy at ~ 630°C. The compositions of the films were chosen to yield a constant banndgap of ~ 0.8 eV (λ = 1.55 µm) at room temperature. The lattice mismatch at room temperature between the epitaxial film and the substrate varies from - 4 × 10-3 to + 4 × 10-3. The strain in the films was characterized in air by x-ray double crystal diffractometry with a controllable heating stage from 23°C to ~ 700°C. All the samples have an almost coherent interfaces from 23°C to about ~ 330°C with the lattice mismatch accomodated mainly by the tetragonal distortion of the epitaxial films. In this temperature range, the x-ray strain in the growth direction increases linearly with temperature at a rate of (2.0 ± 0.4) × 10-6/°C and the strain state of the films is reversible. Once the samples are heated above ~ 300°C, a significant irreversible deterioration of the epitaxial films sets in.

Room-temperature, CW operation of lattice-matched long-wavelength VCSELs

2000 ◽  
Vol 36 (17) ◽  
pp. 1465 ◽  
Author(s):  
E. Hall ◽  
S. Nakagawa ◽  
G. Almuneau ◽  
J.K. Kim ◽  
L.A. Coldren
Keyword(s):  
Room Temperature ◽  
Long Wavelength ◽  
Cw Operation ◽  
Lattice Matched

scholarly journals Room-temperature luminescence of excitons in ZnO/(Mg, Zn)O multiple quantum wells on lattice-matched substrates

2000 ◽  
Vol 77 (7) ◽  
pp. 975 ◽  
Author(s):  
T. Makino ◽  
C. H. Chia ◽  
Nguen T. Tuan ◽  
H. D. Sun ◽  
Y. Segawa ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Lattice Matched ◽  
Room Temperature Luminescence

Chemical Beam Epitaxy Grown Indium Gallium Arsenide Tunnel Junctions

1993 ◽  
Vol 300 ◽  
Author(s):  
N. Medelci ◽  
A. Bensaoula ◽  
M. F. Vilela ◽  
A. Freundlich
Keyword(s):  
Indium Gallium Arsenide ◽  
Room Temperature ◽  
Lattice Mismatch ◽  
Tunnel Junctions ◽  
Chemical Beam Epitaxy ◽  
Temperature Peak ◽  
Temperature Dependent ◽  
Peak Current ◽  
Device Structures ◽  
Lattice Matched

ABSTRACTp+/n+ In0.53Ga0.47As tunnel junctions with room temperature peak to valley ratio of 9:1 are demonstrated. The device structures were grown on both InP and GaAs (4% lattice mismatch) using Chemical Beam Epitaxy (CBE). Be and Si were used as dopants. The devices grown on InP exhibit room temperature peak current in excess of 1000 A/cm2. The peak current of 452 A/cm2 achieved on lattice mismatched material (GaAs) is comparable to the highest results previously reported on lattice matched material (InP). Finally, The device characteristics and the influence of different fabrication steps on the performance of these devices are discussed based on temperature dependent I-V measurements.

Room temperature solution processed tungsten carbide as an efficient hole extraction layer for organic photovoltaics

2014 ◽  
Vol 2 (11) ◽  
pp. 3734-3740 ◽  
Author(s):  
Wei Cui ◽  
Zhongwei Wu ◽  
Changhai Liu ◽  
Mingxing Wu ◽  
Tingli Ma ◽  
...  
Keyword(s):  
Solar Cell ◽  
Tungsten Carbide ◽  
Buffer Layer ◽  
Organic Photovoltaics ◽  
Organic Solar Cell ◽  
High Performance ◽  
Room Temperature ◽  
Solution Processed ◽  
Anode Buffer Layer ◽  
Temperature Solution

We demonstrated tungsten carbide (WC) as an efficient anode buffer layer for a high-performance inverted organic solar cell.

Sign in / Sign up

Export Citation Format

Share Document