scholarly journals Electron irradiation-induced increase of minority carrier diffusion length, mobility, and lifetime in Mg-doped AlN∕AlGaN short period superlattice

2007 ◽  
Vol 91 (18) ◽  
pp. 182103 ◽  
Author(s):  
O. Lopatiuk-Tirpak ◽  
L. Chernyak ◽  
B. A. Borisov ◽  
V. V. Kuryatkov ◽  
S. A. Nikishin ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Minority Carrier Diffusion Length ◽  
Carrier Diffusion ◽  
Short Period ◽  
Mg Doped

scholarly journals Doping level dependence of electron irradiation-induced minority carrier diffusion length increase in Mg-doped GaN

2007 ◽  
Vol 91 (9) ◽  
pp. 092107 ◽  
Author(s):  
O. Lopatiuk-Tirpak ◽  
L. Chernyak ◽  
Y. L. Wang ◽  
F. Ren ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Doping Level ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Minority Carrier Diffusion Length ◽  
Carrier Diffusion ◽  
Length Increase ◽  
Mg Doped

Surface recombination effects on minority carrier diffusion length measurements using electron beam-induced current

1990 ◽  
Vol 48 (4) ◽  
pp. 744-745
Author(s):  
D.P. Malta ◽  
M.L. Timmons
Keyword(s):  
Electron Beam ◽  
Beam Energy ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Effective Diffusion ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Logarithmic Scale ◽  
Minority Carrier Diffusion Length ◽  
Carrier Diffusion

Measurement of the minority carrier diffusion length (L) can be performed by measurement of the rate of decay of excess minority carriers with the distance (x) of an electron beam excitation source from a p-n junction or Schottky barrier junction perpendicular to the surface in an SEM. In an ideal case, the decay is exponential according to the equation, I = Ioexp(−x/L), where I is the current measured at x and Io is the maximum current measured at x=0. L can be obtained from the slope of the straight line when plotted on a semi-logarithmic scale. In reality, carriers recombine not only in the bulk but at the surface as well. The result is a non-exponential decay or a sublinear semi-logarithmic plot. The effective diffusion length (Leff) measured is shorter than the actual value. Some improvement in accuracy can be obtained by increasing the beam-energy, thereby increasing the penetration depth and reducing the percentage of carriers reaching the surface. For materials known to have a high surface recombination velocity s (cm/sec) such as GaAs and its alloys, increasing the beam energy is insufficient. Furthermore, one may find an upper limit on beam energy as the diameter of the signal generation volume approaches the device dimensions.

Study of the spatial distribution of minority carrier diffusion length in epiplanar detector structures

2015 ◽  
Vol 23 (4) ◽  
Author(s):  
T. Piotrowski ◽  
M. Węgrzecki ◽  
M. Stolarski ◽  
T. Krajewski
Keyword(s):  
Spatial Distribution ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Silicon Detector ◽  
Monochromatic Radiation ◽  
Minority Carrier Diffusion Length ◽  
Carrier Diffusion ◽  
Spot Diameter ◽  
Photoelectric Current ◽  
Effective Carrier

AbstractOne of the key parameters determining detection properties of silicon PIN detector structures (pThe paper presents a method for measuring the spatial distribution of effective carrier diffusion length in silicon detector structures, based on the measurement of photoelectric current of a non-polarised structure illuminated (spot diameter of 250 μm) with monochromatic radiation of two wavelengths λ

scholarly journals Measuring the minority carrier diffusion length in n-GaN using bulk STEM EBIC

2018 ◽  
Vol 24 (S1) ◽  
pp. 1842-1843
Author(s):  
Zoey Warecki ◽  
Vladimir Oleshko ◽  
Kimberlee Celio ◽  
Andrew Armstrong ◽  
Andrew Allerman ◽  
...  
Keyword(s):  
Minority Carrier ◽  
Diffusion Length ◽  
Minority Carrier Diffusion Length ◽  
Carrier Diffusion
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