scholarly journals Surface plasmon coupling effect in an InGaN∕GaN single-quantum-well light-emitting diode

2007 ◽  
Vol 91 (17) ◽  
pp. 171103 ◽  
Author(s):  
Dong-Ming Yeh ◽  
Chi-Feng Huang ◽  
Cheng-Yen Chen ◽  
Yen-Cheng Lu ◽  
C. C. Yang
Keyword(s):  
Quantum Well ◽  
Surface Plasmon ◽  
Coupling Effect ◽  
Light Emitting Diode ◽  
Plasmon Coupling ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Light Emitting ◽  
Surface Plasmon Coupling

Recombination dynamics of carriers in an InGaN/AlGaN single-quantum-well light-emitting diode under reverse-bias voltages

2000 ◽  
Vol 76 (12) ◽  
pp. 1546-1548 ◽  
Author(s):  
Hiromitsu Kudo ◽  
Hiroki Ishibashi ◽  
Ruisheng Zheng ◽  
Yoichi Yamada ◽  
Tsunemasa Taguchi
Keyword(s):  
Quantum Well ◽  
Reverse Bias ◽  
Light Emitting Diode ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Light Emitting ◽  
Recombination Dynamics

Reduction in the efficiency droop effect of a light-emitting diode through surface plasmon coupling

2010 ◽  
Vol 96 (26) ◽  
pp. 261104 ◽  
Author(s):  
Chih-Feng Lu ◽  
Che-Hao Liao ◽  
Chih-Yen Chen ◽  
Chieh Hsieh ◽  
Yean-Woei Kiang ◽  
...  
Keyword(s):  
Surface Plasmon ◽  
Light Emitting Diode ◽  
Efficiency Droop ◽  
Plasmon Coupling ◽  
Light Emitting ◽  
Surface Plasmon Coupling

Single-quantum well InGaN green light emitting diode degradation under high electrical stress

1999 ◽  
Vol 39 (8) ◽  
pp. 1219-1227 ◽  
Author(s):  
Daniel L. Barton ◽  
Marek Osinski ◽  
Piotr Perlin ◽  
Petr G. Eliseev ◽  
Jinhyun Lee
Keyword(s):  
Quantum Well ◽  
Light Emitting Diode ◽  
Green Light ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Light Emitting ◽  
Electrical Stress

scholarly journals Modeling and Simulations of 4H-SiC/6H-SiC/4H-SiC Single Quantum-Well Light Emitting Diode Using Diffusion Bonding Technique

Micromachines ◽  
2021 ◽  
Vol 12 (12) ◽  
pp. 1499
Author(s):  
Muhammad Haroon Rashid ◽  
Ants Koel ◽  
Toomas Rang ◽  
Nadeem Nasir ◽  
Haris Mehmood ◽  
...  
Keyword(s):  
Quantum Well ◽  
Power Efficiency ◽  
Semiconductor Device ◽  
Light Emission ◽  
Light Emitting Diode ◽  
Design Parameters ◽  
Diffusion Welding ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Light Emitting

In the last decade, Silicon carbide (SiC) has emerged as a potential material for high-frequency electronics and optoelectronics applications that may require elevated temperature processing. SiC exists in more than 200 different crystallographic forms, referred to as polytypes. Based on their remarkable physical and electrical characteristics, such as better thermal and electrical conductivities, 3C-SiC, 4H-SiC, and 6H-SiC are considered as the most distinguished polytypes of SiC. In this article, physical device simulation of a light-emitting diode (LED) based on the unique structural configuration of 4H-SiC and 6H-SiC layers has been performed which corresponds to a novel material joining technique, called diffusion welding/bonding. The proposed single quantum well (SQW) edge-emitting SiC-based LED has been simulated using a commercially available semiconductor device simulator, SILVACO TCAD. Moreover, by varying different design parameters, the current-voltage characteristics, luminous power, and power spectral density have been calculated. Our proposed LED device exhibited promising results in terms of luminous power efficiency and external quantum efficiency (EQE). The device numerically achieved a luminous efficiency of 25% and EQE of 16.43%, which is at par performance for a SQW LED. The resultant LED structure can be customized by choosing appropriate materials of varying bandgaps to extract the light emission spectrum in the desired wavelength range. It is anticipated that the physical fabrication of our proposed LED by direct bonding of SiC-SiC wafers will pave the way for the future development of efficient and cost-effective SiC-based LEDs.

Sign in / Sign up

Export Citation Format

Share Document