Stimulated emission at 474nm from an InGaN laser diode structure grown on a (112¯2) GaN substrate

2007 ◽  
Vol 91 (25) ◽  
pp. 251107 ◽  
Author(s):  
K. Kojima ◽  
M. Funato ◽  
Y. Kawakami ◽  
S. Masui ◽  
S. Nagahama ◽  
...  
Keyword(s):  
Laser Diode ◽  
Stimulated Emission ◽  
Diode Structure

Stimulated Emission from ZnSe-Based Laser Diode Structure Grown by Photoassisted MOVPE with Annealing Technique

1997 ◽  
Author(s):  
K. Ogata ◽  
N. Nishiyama ◽  
D. Kawaguchi ◽  
G. Peng ◽  
Sz. Fujita ◽  
...  
Keyword(s):  
Laser Diode ◽  
Stimulated Emission ◽  
Diode Structure

Recovery of degradation in II-VI laser diode structure

1999 ◽  
Vol 35 (15) ◽  
pp. 1281 ◽  
Author(s):  
C. Jordan ◽  
E.M. McCabe ◽  
J.F. Donegan ◽  
K. Nakano ◽  
A. Ishibashi ◽  
...  
Keyword(s):  
Laser Diode ◽  
Diode Structure

Effects of a prestrained InGaN interlayer on the emission properties of InGaN/GaN multiple quantum wells in a laser diode structure

2013 ◽  
Vol 22 (7) ◽  
pp. 076803 ◽  
Author(s):  
Wen-Yu Cao ◽  
Yong-Fa He ◽  
Zhao Chen ◽  
Wei Yang ◽  
Wei-Min Du ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Laser Diode ◽  
Diode Structure ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Emission Properties

GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature

2021 ◽  
Vol 42 (11) ◽  
pp. 112801
Author(s):  
Feng Liang ◽  
Degang Zhao ◽  
Zongshun Liu ◽  
Ping Chen ◽  
Jing Yang ◽  
...  
Keyword(s):  
Laser Diode ◽  
Room Temperature ◽  
Continuous Wave ◽  
Chemical Vapor ◽  
Threshold Current ◽  
Stimulated Emission ◽  
Blue Laser ◽  
Organic Chemical ◽  
Blue Laser Diode ◽  
Continuous Wave Operation

Abstract In this work, we reported the room-temperature continuous-wave operation of 6.0 W GaN-based blue laser diode (LD), and its stimulated emission wavelength is around 442 nm. The GaN-based high power blue LD is grown on a c-plane GaN substrate by metal organic chemical vapor deposition (MOCVD), and the width and length of the ridge waveguide structure are 30 and 1200 μm, respectively. The threshold current is about 400 mA, and corresponding threshold current density is 1.1 kA/cm2.

A novel distributed feedback laser diode structure for an optical wavelength tunable filter

1997 ◽  
Vol 12 (9) ◽  
pp. 1161-1165 ◽  
Author(s):  
H Ghafouri-Shiraz ◽  
S H Lew ◽  
P W Tan ◽  
S Kobayashi ◽  
I N Kamata ◽  
...  
Keyword(s):  
Laser Diode ◽  
Tunable Filter ◽  
Distributed Feedback ◽  
Diode Structure ◽  
Distributed Feedback Laser ◽  
Optical Wavelength ◽  
Wavelength Tunable

scholarly journals Effect of 405 nm Diode Laser with Varying Irradiation Time on BHK-21 Fibroblast Viability

2019 ◽  
Vol 9 (1) ◽  
pp. 13
Author(s):  
Kun Ismiyatin ◽  
Leidy Herlin Rumbiak ◽  
Widya Saraswati ◽  
Sri Kunarti ◽  
Anuj Bhardwaj
Keyword(s):  
Laser Diode ◽  
Irradiation Time ◽  
Control Cell ◽  
Stimulated Emission ◽  
Fibroblast Cells ◽  
Optical Amplification ◽  
Viability Test ◽  
Inhibition Response ◽  
Levene Test ◽  
Radiation Time

Background: Laser is a device that emits light through a process of optical amplification based on the stimulated emission of electromagnetic radiation; it can be used for surgery, detoxification, bio stimulation and antibacterial. However, lasers have Biphasic Dose Response (BDR), which is bio stimulation and bio inhibition. To determine if 405 nm laser diode is biocompatible, viability test is necessary before these lasers can be labeled as viable to use in dental therapy. Aim: To prove the variation of radiation time of the 405 nm laser diode radiation can cause bio stimulation and bio inhibition response that affects the viability of BHK-21 fibroblast cells. Method: Viability test was carried out using BHK-21 fibroblast cells which were inserted into 96-well microplate, then radiated with 405 nm laser diode with varying irradiation time of 30s, 60s, 120s, 240s and 480s. After radiation, the cells are then incubated for 24h. Cytotoxicity was observed using MTT assay and ELISA reader. Data was analyzed using the Kolmogorov-Smirnov test, Levene Test, Welch ANOVA, and Tukey HSD. Results: BHK-21 fibroblast cells radiated with 405 nm laser diode with radiation time of 30s, 60s, 120s, and 240s have the same viability as the control cell, while at 480 seconds the viability exceeds that of the control cell. Conclusion: 405 nm laser diode with radiation times of 30s, 60s, 120s, and 240s do not affect the viability of BHK-21 fibroblast cells. Meanwhile, 480s irradiation time of 405 nm laser diode causes bio stimulation response that increases the viability of BHK-21 fibroblast cells.

scholarly journals Atom probe tomography characterisation of a laser diode structure grown by molecular beam epitaxy

2012 ◽  
Vol 111 (5) ◽  
pp. 053508 ◽  
Author(s):  
Samantha E. Bennett ◽  
Tim M. Smeeton ◽  
David W. Saxey ◽  
George D. W. Smith ◽  
Stewart E. Hooper ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Laser Diode ◽  
Atom Probe Tomography ◽  
Molecular Beam ◽  
Atom Probe ◽  
Diode Structure

scholarly journals Defect annealing in a II–VI laser diode structure under intense optical excitation

1998 ◽  
Vol 72 (2) ◽  
pp. 194-196 ◽  
Author(s):  
C. Jordan ◽  
D. T. Fewer ◽  
J. F. Donegan ◽  
E. M. McCabe ◽  
A. Huynh ◽  
...  
Keyword(s):  
Laser Diode ◽  
Optical Excitation ◽  
Diode Structure ◽  
Defect Annealing
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