Paramagnetic-ferromagnetic phase transition and magnetic properties of ultrathin CoFe∕Cu(110) films

2007 ◽  
Vol 102 (8) ◽  
pp. 083902 ◽  
Author(s):  
D. Küpper ◽  
S. Easton ◽  
J. A. C. Bland
2012 ◽  
Vol 26 (15) ◽  
pp. 1250097
Author(s):  
Y. P. HAN ◽  
X. J. WANG ◽  
Q. R. HOU ◽  
Q. W. WANG ◽  
J. X. WANG

The Fe 0.95 Co 0.05 Si 2 semiconducting film has been successfully grown on glass substrate by magnetron sputtering at substrate temperature of 637 K and then thermal annealing at 823 K for one hour in high vacuum. The Raman data and high Seebeck coefficient suggested that the β- Fe 0.95 Co 0.05 Si 2 semiconducting film was achieved. Room temperature ferromagnetism was observed, and the ferromagnetic phase transition was at about 380 K. The possible reason for the ferromagnetism of the β- Fe 0.95 Co 0.05 Si 2 semiconducting film was discussed.


1999 ◽  
Vol 11 (43) ◽  
pp. 8445-8451 ◽  
Author(s):  
E Dudzik ◽  
H A Dürr ◽  
S S Dhesi ◽  
G van der Laan ◽  
D Knabben ◽  
...  

1997 ◽  
Vol 488 ◽  
Author(s):  
M. Tokumoto ◽  
Y. Tsubaki ◽  
K. Pokhodnya ◽  
Y. sakakibara ◽  
A. Omerzu ◽  
...  

AbstractRecent progress in the study on magnetic properties of molecular soft ferromagnet TDAE-C60 (where TDAE is tetrakis(dimethylamino) ethylene) is reported. Both crystalline and thin film samples are prepared by the diffusion method and the temperature and field dependence of magnetization are studied by SQUID magnetometer. The magnetic behaviors of single crystals were found to vary from sample to sample. In best single crystals, the saturation magnetization as high as 1.0 μB/C60 has been observed. Spontaneous magnetization and its temperature dependence was evaluated from the Arrott plot. The ferromagnetic phase transition was also observed in TDAE-C60 thin films.


2006 ◽  
Vol 243 (6) ◽  
pp. 1352-1359 ◽  
Author(s):  
S. Tuleja ◽  
J. Kecer ◽  
V. Ilkovič

1999 ◽  
Vol 59 (1) ◽  
pp. 364-368 ◽  
Author(s):  
M. N. Iliev ◽  
A. P. Litvinchuk ◽  
H.-G. Lee ◽  
C. L. Chen ◽  
M. L. Dezaneti ◽  
...  

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