Influence of electrode configuration on dielectric properties of ferroelectric films with interdigital and parallel plate electrodes

2007 ◽  
Vol 91 (18) ◽  
pp. 182907 ◽  
Author(s):  
Hong Liu ◽  
Jianguo Zhu ◽  
Dingquan Xiao ◽  
Xiaogang Gong ◽  
Jin-e Liang ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Parallel Plate ◽  
Electrode Configuration ◽  
Ferroelectric Films

scholarly journals Piezoelectric and Dielectric Characterization of MWCNT-Based Nanocomposite Flexible Films

2018 ◽  
Vol 2018 ◽  
pp. 1-15 ◽  
Author(s):  
S. Banerjee ◽  
W. Du ◽  
U. Sundar ◽  
K. A. Cook-Chennault
Keyword(s):  
Dielectric Properties ◽  
Parallel Plate ◽  
Volume Fraction ◽  
Sol Gel ◽  
Deposition Process ◽  
Contact Method ◽  
Dielectric Polarization ◽  
Multiwalled Carbon ◽  
Dielectric Characterization ◽  
Piezoelectric Strain

PZT-epoxy-multiwalled carbon nanotube (MWCNT) flexible thick film actuators were fabricated using a sol-gel and spin coat and deposition process. Films were characterized in terms of their piezoelectric and dielectric properties as a function of MWCNT volume fraction and polarization process. Correlations between surface treatment of the MWCNTs and composite performance were made. The surface morphology and filler distribution were observed with the aid of SEM and TEM images. The volume fraction of PZT was held constant at 30%, and the volume fraction of MWCNTs varied from 1% to 10%. Two forms of dielectric polarization were compared. Corona discharge polarization induced enhanced piezoelectric and dielectric properties by a factor of 10 in comparison to the parallel-plate contact method (piezoelectric strain coefficient and dielectric constant were 0.59 pC/N and 61.81, respectively, for the parallel-plate contact method and 9.22 pC/N and 103.59 for the corona polarization method, respectively). The percolation threshold range was observed to occur at a MWCNT volume fraction range between 5% and 6%.

Ferroelectric films of deuterated glycine phosphite: Structure and dielectric properties

2013 ◽  
Vol 55 (5) ◽  
pp. 995-1001 ◽  
Author(s):  
E. V. Balashova ◽  
B. B. Krichevtsov ◽  
F. B. Svinarev ◽  
V. V. Lemanov
Keyword(s):  
Dielectric Properties ◽  
Ferroelectric Films

STUDIES ON ORIENTED DOMAIN POLYSTYRENE-TGS COMPOSITE FILMS

1995 ◽  
Vol 09 (17) ◽  
pp. 1039-1044
Author(s):  
S.C. MATHUR ◽  
D.S. RAWAT ◽  
H.O. YADAV ◽  
D.C. DUBE ◽  
A.S. BHALLA
Keyword(s):  
Dielectric Constant ◽  
Transition Temperature ◽  
Dielectric Properties ◽  
Domain Structure ◽  
Spontaneous Polarization ◽  
Coercive Field ◽  
Composite Films ◽  
Microwave Frequency ◽  
Ferroelectric Films ◽  
Microwave Frequencies

Polymer ferroelectric films were prepared by dispersing TGS powder in polystyrene. Permittivity versus temperature plots exhibit a peak at around the transition temperature of TGS. The peak gets suppressed with increasing frequency and the trend continues up to microwave frequencies. We observed that the dielectric constant of films at microwave frequency stays close to the dielectric constant of polystyrene. The domain structure of TGS crystals essentially seems to affect their dielectric properties. Single domain films exhibit a higher spontaneous polarization and a higher coercive field.

Preparation and Dielectric Properties of Cerium and Manganese Codoped Ba0.6Sr0.4TiO3 Ferroelectric Films

2013 ◽  
Vol 144 (1) ◽  
pp. 107-111 ◽  
Author(s):  
Jiaxuan Liao ◽  
Peng Wang ◽  
Xubo Wei ◽  
Ziqiang Xu ◽  
Xiongbang Wei ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Ferroelectric Films

Dependence of capacitance on electrode configuration for ferroelectric films with interdigital electrodes

2003 ◽  
Vol 66 (1-4) ◽  
pp. 880-886 ◽  
Author(s):  
Y. Wang ◽  
N. Chong ◽  
Y.L. Cheng ◽  
H.L.W. Chan ◽  
C.L. Choy
Keyword(s):  
Electrode Configuration ◽  
Ferroelectric Films ◽  
Interdigital Electrodes

(100) Oriented Sputter-deposited Pt Thin Films on MgO/Fe Composite Bilayers using SiO2/Si substrates With Addition of O2 During Pt Sputtering

2010 ◽  
Vol 1255 ◽  
Author(s):  
Shigeki Nakagawa ◽  
Hiroshi Nakano ◽  
Yuji Murashima ◽  
Kazuki Komaki ◽  
Tatsuro Matsumoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Surface Energy ◽  
Bottom Electrode ◽  
Oxide Films ◽  
Oxide Thin Films ◽  
Ferroelectric Films ◽  
Si Substrates ◽  
20 Nm ◽  
Perovskite Type

AbstractPerovskite type oxide thin films have attracted a lot of attention, because they are essential materials which will be used for various electric devices such as ferroelectric random access memory (FeRAM) and tunable filter devices. When the materials are used for such capacitive devices, bottom electrode layers for oxide films are very important, since they significantly affect the crystallinity of the oxide films. Platinum (Pt) is one of the well known bottom electrode materials used for the oxide thin films. Pt provides also better nucleation sites for such perovskite materials due to small lattice misfit. Since dielectric properties of ferroelectric films are originated from the displacement of ions in a crystal along the c-axis direction, c-axis oriented ferroelectric thin films are required to attain better dielectric properties. (100) oriented Pt layers are required to attain c-axis oriented perovskite type ferroelectric films. In our previous report, we succeeded in preparing (100)-oriented Pt thin films with thickness of 20 nm on SiO2/Si substrate at substrate temperature Ts above 400 °C using MgO (100) buffer layers which deposited on Fe (100) seed layers. However, the growth of Pt(111) texture appeared when the thickness was increased from 20 nm to 100 nm, since (100) texture has relatively higher surface energy than (111) closely packed texture for Pt surface. It suggested that surface energy of the films changed during the deposition. In order to keep the surface energy, addition of O2 gas was performed during Pt deposition. Pt thin films with (100) preferred orientation with thickness above 100 nm were deposited on the (100) oriented MgO layer prepared on very thin seed Fe layers deposited on SiO2/Si substrates at Ts of 500 °C by facing-targets sputtering. It was also succeeded to attain (100) oriented perovskite oxide layer when they were deposited on the Pt(100)/Mg(100)/Fe/SiO2/Si underlayer.

Sign in / Sign up

Export Citation Format

Share Document