scholarly journals Characterization of Fabry-Pérot microcavity modes in GaAs nanowires fabricated by selective-area metal organic vapor phase epitaxy

2007 ◽  
Vol 91 (13) ◽  
pp. 131112 ◽  
Author(s):  
Bin Hua ◽  
Junichi Motohisa ◽  
Ying Ding ◽  
Shinjiroh Hara ◽  
Takashi Fukui
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Selective Area ◽  
Gaas Nanowires ◽  
Fabry Perot ◽  
Metal Organic

Growth and Characterization of InGaAs Nanowires formed on GaAs(111)B by Selective-Area Metal Organic Vapor Phase Epitaxy

2009 ◽  
Author(s):  
M. Yoshimura ◽  
K. Tomioka ◽  
K. Hiruma ◽  
S. Hara ◽  
J. Motohisa ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Selective Area ◽  
Metal Organic

Characterization of nanowire light-emitting diodes grown by selective-area metal-organic vapor-phase epitaxy

2019 ◽  
Vol 30 (13) ◽  
pp. 134002 ◽  
Author(s):  
Junichi Motohisa ◽  
Hiroki Kameda ◽  
Masahiro Sasaki ◽  
Katsuhiro Tomioka
Keyword(s):  
Vapor Phase ◽  
Light Emitting Diodes ◽  
Vapor Phase Epitaxy ◽  
Light Emitting ◽  
Organic Vapor ◽  
Selective Area ◽  
Metal Organic

Growth and Characterization of a GaAs Quantum Well Buried in GaAsP/GaAs Vertical Heterostructure Nanowires by Selective-Area Metal Organic Vapor Phase Epitaxy

2011 ◽  
Vol 50 (4S) ◽  
pp. 04DH03 ◽  
Author(s):  
Shota Fujisawa ◽  
Takuya Sato ◽  
Shinjiro Hara ◽  
Junichi Motohisa ◽  
Kenji Hiruma ◽  
...  
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Selective Area ◽  
Metal Organic

Growth and Characterization of MnAs Nanoclusters Embedded in GaAs Nanowires by Metal–Organic Vapor Phase Epitaxy

2012 ◽  
Vol 51 (2) ◽  
pp. 02BH01 ◽  
Author(s):  
Masatoshi Yatago ◽  
Hiroko Iguchi ◽  
Shinya Sakita ◽  
Shinjiro Hara
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Gaas Nanowires ◽  
Metal Organic

Growth and Characterization of a GaAs Quantum Well Buried in GaAsP/GaAs Vertical Heterostructure Nanowires by Selective-Area Metal Organic Vapor Phase Epitaxy

2011 ◽  
Vol 50 (4) ◽  
pp. 04DH03 ◽  
Author(s):  
Shota Fujisawa ◽  
Takuya Sato ◽  
Shinjiro Hara ◽  
Junichi Motohisa ◽  
Kenji Hiruma ◽  
...  
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Selective Area ◽  
Metal Organic

Growth and Characterization of InGaAs Nanowires Formed on GaAs(111)B by Selective-Area Metal Organic Vapor Phase Epitaxy

2010 ◽  
Vol 49 (4) ◽  
pp. 04DH08 ◽  
Author(s):  
Masatoshi Yoshimura ◽  
Katsuhiro Tomioka ◽  
Kenji Hiruma ◽  
Shinjiro Hara ◽  
Junichi Motohisa ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Selective Area ◽  
Metal Organic

Bottom-Up Formation of Vertical Free-Standing Semiconductor Nanowires Hybridized with Ferromagnetic Nanoclusters

2014 ◽  
Vol 783-786 ◽  
pp. 1990-1995 ◽  
Author(s):  
Shinjiro Hara
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Free Standing ◽  
Bottom Up ◽  
Semiconductor Nanowire ◽  
Organic Vapor ◽  
Selective Area ◽  
Gaas Nanowires ◽  
Metal Organic ◽  
Inas Nanowires

The author introduces and summarizes the results on bottom-up formation and structural characterizations obtained so far for the MnAs nanoclusters and MnAs/semiconductor nanowire hybrids. First, MnAs nanoclusters were grown by selective-area metal-organic vapor phase epitaxy. They had a hexagonal NiAs-type crystal structure. Their <00(0)1> direction was parallel to <111>B direction of zinc-blende-type GaAs substrates. Hybrid MnAs/GaAs nanowires, subsequently, were fabricated by combining selective-area metal-organic vapor phase epitaxy of GaAs nanowire templates and endotaxial MnAs nanoclustering on them. MnAs nanoclusters ordered at six ridges of hexagonal GaAs nanowires were formed possibly owing to more atomic steps between {0-11} crystal facets. In the case of hybrid MnA/InAs nanowires, MnAs nanoclusters were not formed only on the {0-11} side-walls, and/or ridges between them, but on the top {111}B crystal facets of hexagonal InAs nanowires. MnAs nanoclusters were formed much deeper into the InAs nanowires than into the GaAs nanowires. These facts are possibly due to the InAs nanowires are thermally less stable than the GaAs nanowires. Some of the hybrid MnA/InAs nanowires were bent at the parts where the MnAs nanoclusters were grown into the host nanowires mainly owing to the strain effects.

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