Effective passivation of highly aluminum-doped p-type silicon surfaces using amorphous silicon

2007 ◽  
Vol 91 (11) ◽  
pp. 112112 ◽  
Author(s):  
Robert Bock ◽  
Jan Schmidt ◽  
Rolf Brendel
Keyword(s):  
Amorphous Silicon ◽  
Silicon Surfaces ◽  
Type Silicon ◽  
P Type

Properties of the contact on ion cleaned n and p type silicon surfaces

1983 ◽  
Vol 26 (4) ◽  
pp. 325-331 ◽  
Author(s):  
E. Vieujot-Testemale ◽  
J.M. Palau ◽  
A. Ismail ◽  
L. Lassabatere
Keyword(s):  
Silicon Surfaces ◽  
Type Silicon ◽  
P Type

Localized Gold Electrodeposition onto p-type Silicon surfaces

2019 ◽  
Vol 6 (8) ◽  
pp. 209-222
Author(s):  
Lionel Santinacci ◽  
Thierry Djenizian ◽  
A. Etcheberry ◽  
Patrik Schmuki
Keyword(s):  
Silicon Surfaces ◽  
Type Silicon ◽  
P Type

Wet Chemical Oxidation of Silicon Surfaces Prior to the Deposition of All-PECVD AlOx/a-SiNx Passivation Stacks for Silicon Solar Cells

2012 ◽  
Vol 195 ◽  
pp. 310-313 ◽  
Author(s):  
Abdelazize Laades ◽  
Heike Angermann ◽  
Hans Peter Sperlich ◽  
Uta Stürzebecher ◽  
Carlos Alberto Díaz Álvarez ◽  
...  
Keyword(s):  
Solar Cells ◽  
Surface Passivation ◽  
Chemical Vapor ◽  
Chemical Oxidation ◽  
Silicon Surfaces ◽  
Silicon Solar Cells ◽  
Rear Side ◽  
Type Silicon ◽  
Wet Chemical ◽  
P Type

Aluminum oxide (AlOx) is currently under intensive investigation for use in surface passivation schemes in solar cells. AlOx films contain negative charges and therefore generate an accumulation layer on p-type silicon surfaces, which is very favorable for the rear side of p-type silicon solar cells as well as the p+-emitter at the front side of n-type silicon solar cells. However, it has been reported that quality of an interfacial silicon sub-oxide layer (SiOx), which is usually observed during deposition of AlOx on Silicon, strongly impacts the silicon/AlOx interface passivation properties [1]. The present work demonstrates that a convenient way to control the interface is to form thin wet chemical oxides of high quality prior to the deposition of AlOx/a-SiNx:H stacks by the plasma enhanced chemical vapor deposition (PECVD).

Percolation network in resistive switching devices with the structure of silver/amorphous silicon/p-type silicon

2014 ◽  
Vol 104 (4) ◽  
pp. 043502 ◽  
Author(s):  
Yanhong Liu ◽  
Ping Gao ◽  
Xuening Jiang ◽  
Kaifeng Bi ◽  
Hongxia Xu ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Resistive Switching ◽  
Type Silicon ◽  
P Type ◽  
Percolation Network ◽  
Switching Devices

Formation and characterization of semiconductor Ca2Si layers prepared on p-type silicon covered by an amorphous silicon cap

2012 ◽  
Vol 48 (7) ◽  
pp. 2872-2882 ◽  
Author(s):  
L. Dózsa ◽  
G. Molnár ◽  
Z. Zolnai ◽  
L. Dobos ◽  
B. Pécz ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Type Silicon ◽  
P Type
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