Impact of the top silicon thickness on phonon-limited electron mobility in (110)-oriented ultrathin-body silicon-on-insulator n-metal-oxide-semiconductor field-effect transistors

Hui-Chang Moon; Seong-Je Kim; Tae-Hun Shim; Jea-Gun Park

doi:10.1063/1.2784079

Impact of the top silicon thickness on phonon-limited electron mobility in (110)-oriented ultrathin-body silicon-on-insulator n-metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.2784079 ◽

2007 ◽

Vol 102 (6) ◽

pp. 063520 ◽

Cited By ~ 8

Author(s):

Hui-Chang Moon ◽

Seong-Je Kim ◽

Tae-Hun Shim ◽

Jea-Gun Park

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Silicon Thickness

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Silicon thickness fluctuation scattering dependence of electron mobility in ultrathin body silicon-on-insulator n-metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.2902951 ◽

2008 ◽

Vol 103 (8) ◽

pp. 084503 ◽

Cited By ~ 4

Author(s):

Yong-Seon Lee ◽

Tae-Hun Shim ◽

Sang-Dong Yoo ◽

Jea-Gun Park

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Silicon Thickness

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Experimental Study on Electron Mobility in Accumulation-Mode Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.094101 ◽

2011 ◽

Vol 50 (9R) ◽

pp. 094101 ◽

Cited By ~ 7

Author(s):

Naotoshi Kadotani ◽

Teruyuki Ohashi ◽

Tsunaki Takahashi ◽

Shunri Oda ◽

Ken Uchida

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Accumulation Mode

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Empirical Models of Phonon-Limited Electron Mobility for Ultrathin-Body Single-Gate and Double-Gate Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors with (001) or (111) Si Surface Channel

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.3463 ◽

2007 ◽

Vol 46 (6A) ◽

pp. 3463-3470

Author(s):

Tsuyoshi Yamamura ◽

Shingo Sato ◽

Yasuhisa Omura

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Empirical Models ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate

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Experimental study on electron mobility in ultrathin-body silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.2785957 ◽

2007 ◽

Vol 102 (7) ◽

pp. 074510 ◽

Cited By ~ 66

Author(s):

Ken Uchida ◽

Junji Koga ◽

Shin-ichi Takagi

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor

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Experimental Study on Electron Mobility in Accumulation-Mode Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.094101 ◽

2011 ◽

Vol 50 (9) ◽

pp. 094101 ◽

Cited By ~ 5

Author(s):

Naotoshi Kadotani ◽

Teruyuki Ohashi ◽

Tsunaki Takahashi ◽

Shunri Oda ◽

Ken Uchida

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Accumulation Mode

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Dependence of temperature and self-heating on electron mobility in ultrathin body silicon-on-insulator n-metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.2913498 ◽

2008 ◽

Vol 103 (9) ◽

pp. 094522 ◽

Cited By ~ 4

Author(s):

Tae-Hun Shim ◽

Seong-Je Kim ◽

Gon-Sub Lee ◽

Kwan-Su Kim ◽

Won-Ju Cho ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Self Heating

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Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

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Self-consistent calculations of inversion-layer mobility in highly doped silicon-on-insulator metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1378329 ◽

2001 ◽

Vol 90 (2) ◽

pp. 866-870 ◽

Cited By ~ 6

Author(s):

Hideyuki Iwata

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Self Consistent ◽

Doped Silicon

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High-Electron-Mobility Ge n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y2O3

Applied Physics Express ◽

10.1143/apex.4.064201 ◽

2011 ◽

Vol 4 (6) ◽

pp. 064201 ◽

Cited By ~ 59

Author(s):

Tomonori Nishimura ◽

Choong Hyun Lee ◽

Toshiyuki Tabata ◽

Sheng Kai Wang ◽

Kosuke Nagashio ◽

...

Keyword(s):

High Pressure ◽

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility

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Electron Mobility Enhancement of Extremely Thin Body In$_{0.7}$Ga$_{0.3}$As-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates by Metal–Oxide–Semiconductor Interface Buffer Layers

Applied Physics Express ◽

10.1143/apex.5.014201 ◽

2011 ◽

Vol 5 (1) ◽

pp. 014201 ◽

Cited By ~ 22

Author(s):

SangHyeon Kim ◽

Masafumi Yokoyama ◽

Noriyuki Taoka ◽

Ryo Iida ◽

Sunghoon Lee ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Buffer Layers ◽

Oxide Semiconductor ◽

Thin Body ◽

Semiconductor Interface ◽

Si Substrates

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