scholarly journals Lateral electron tunneling through single self-assembled InAs quantum dots coupled to superconducting nanogap electrodes

2007 ◽  
Vol 91 (11) ◽  
pp. 112102 ◽  
Author(s):  
Kenji Shibata ◽  
Christo Buizert ◽  
Akira Oiwa ◽  
Kazuhiko Hirakawa ◽  
Seigo Tarucha
Keyword(s):  
Quantum Dots ◽  
Electron Tunneling ◽  
Inas Quantum Dots ◽  
Self Assembled ◽  
Nanogap Electrodes

Electron tunneling through single self-assembled InAs quantum dots coupled to nanogap electrodes

2008 ◽  
Vol 5 (9) ◽  
pp. 2869-2872
Author(s):  
K. Shibata ◽  
M. Jung ◽  
C. Buizert ◽  
A. Oiwa ◽  
K. Hirakawa ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Tunneling ◽  
Inas Quantum Dots ◽  
Self Assembled ◽  
Nanogap Electrodes

Shell structures in self-assembled InAs quantum dots probed by lateral electron tunneling structures

2005 ◽  
Vol 87 (20) ◽  
pp. 203109 ◽  
Author(s):  
M. Jung ◽  
T. Machida ◽  
K. Hirakawa ◽  
S. Komiyama ◽  
T. Nakaoka ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Tunneling ◽  
Shell Structures ◽  
Inas Quantum Dots ◽  
Self Assembled

Electron transport through single self-assembled InAs quantum dots coupled to superconducting nanogap electrodes

2008 ◽  
Vol 5 (1) ◽  
pp. 178-181
Author(s):  
K. Shibata ◽  
C. Buizert ◽  
A. Oiwa ◽  
K. Hirakawa ◽  
S. Tarucha
Keyword(s):  
Quantum Dots ◽  
Electron Transport ◽  
Inas Quantum Dots ◽  
Self Assembled ◽  
Nanogap Electrodes

Effect of In–Ga intermixing on the electronic states in self-assembled InAs quantum dots probed by nanogap electrodes

2009 ◽  
Vol 94 (16) ◽  
pp. 162107 ◽  
Author(s):  
K. Shibata ◽  
M. Jung ◽  
K. M. Cha ◽  
M. Sotome ◽  
K. Hirakawa
Keyword(s):  
Quantum Dots ◽  
Electronic States ◽  
Inas Quantum Dots ◽  
Self Assembled ◽  
Nanogap Electrodes

Dislocation-induced spatial alignment of self-assembled InAs/GaAs quantum dots

2002 ◽  
Vol 737 ◽  
Author(s):  
H. S. Lee ◽  
J. Y. Lee ◽  
T. W. Kim ◽  
Y. J. Park
Keyword(s):  
Quantum Dots ◽  
Electron Tunneling ◽  
Structural Characteristics ◽  
Misfit Dislocations ◽  
Inas Quantum Dots ◽  
Strained Layer ◽  
Spatial Alignment ◽  
Potential Applications ◽  
Self Assembled ◽  
Tunneling Devices

ABSTRACTWe have studied the alignment of self-assembled InAs quantum dots (QDs) grown by molecular beam epitaxy using misfit dislocations generated due to the strained InxGa1-xAs/GaAs superlattice system. Structural characteristics of aligned SAQDs have been investigated by using atomic force microscopy (AFM) and transmission electron microscopy (TEM) measurements. AFM and TEM images showed that vertical stacked InAs QD arrays were aligned along <110> direction on the controlled strained layer. The anisotropic alignments along the [110] and [110] directions are closely related with the anisotropy of strain-relief for both directions, which affect the anisotropic diffusivity of indium adatoms on the strained superlattice layer. The strong alignment appears on the highly strained layer. These results indicate that aligned InAs quantum dots formed by changing the periods of strained superlattice hold promise for potential applications in nanoelectronic devices, such as single electron tunneling devices.

Electronic properties of self-assembled InAs quantum dots on GaAs surfaces probed by lateral electron tunneling structures

2007 ◽  
Vol 301-302 ◽  
pp. 731-734 ◽  
Author(s):  
K. Shibata ◽  
M. Jung ◽  
K. Hirakawa ◽  
T. Machida ◽  
S. Ishida ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electronic Properties ◽  
Electron Tunneling ◽  
Inas Quantum Dots ◽  
Self Assembled

Magnetotunneling spectroscopy imaging of electron wave functions in self-assembled InAs quantum dots

2001 ◽  
Vol 171 (12) ◽  
pp. 1365
Author(s):  
E.E. Vdovin ◽  
Yu.N. Khanin ◽  
Yu.V. Dubrovskii ◽  
A. Veretennikov ◽  
A. Levin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Wave Functions ◽  
Electron Wave ◽  
Inas Quantum Dots ◽  
Self Assembled
Sign in / Sign up

Export Citation Format

Share Document