Oxygen vacancies induced room temperature ferromagnetism in hydrogenated Mn-doped ZnO

2007 ◽  
Vol 102 (5) ◽  
pp. 056105 ◽  
Author(s):  
V. K. Sharma ◽  
G. D. Varma
Keyword(s):  
Room Temperature ◽  
Oxygen Vacancies ◽  
Room Temperature Ferromagnetism ◽  
Doped Zno ◽  
Mn Doped

Room Temperature Ferromagnetism and Fast Ultraviolet Photoresponse of Inkjet-Printed Mn-Doped ZnO Thin Films

2010 ◽  
Vol 46 (6) ◽  
pp. 2152-2155 ◽  
Author(s):  
Yan Wu ◽  
K. V. Rao ◽  
Wolfgang Voit ◽  
Takahiko Tamaki ◽  
O. D. Jayakumar ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Mn Doped

Room Temperature Ferromagnetism and its "Switch" Behaviour in some Dilute Magnetic Oxides: an Electronic Structure and Magnetization Study

2011 ◽  
Vol 171 ◽  
pp. 19-38 ◽  
Author(s):  
R.K. Singhal
Keyword(s):  
Electronic Structure ◽  
Quantum Interference ◽  
Room Temperature ◽  
Oxygen Vacancies ◽  
Diluted Magnetic Semiconductor ◽  
Room Temperature Ferromagnetism ◽  
Secondary Phase ◽  
X Ray ◽  
Two Samples ◽  
Doped Zno

ZnO doped with a few per cent of magnetic ions such as Ni, Fe, Co exhibits room temperature ferromagnetism (RTFM), transforming it into a very promising candidate for future spintronic applications. Two samples i.e. ZnO doped with Ni and Cr (5% each) have been investigated in the present work. The samples were characterized by Rietveld refinement of X-ray diffraction (XRD) patterns and the superconducting quantum interference device (SQUID) magnetometry. Rietveld analysis confirms that both the polycrystalline samples possess wurtzite structure with no evidence of any secondary phase. The SQUID measurements exhibit a diamagnetic state for the pristine ZnO and a paramagnetic state for the as-synthesized (Cr and Ni)-doped ZnO samples. However, the post annealing in H2 and vacuum drive them to a remarkable ferromagnetic state at room temperature. No element specific signature for ferromagnetism was seen. Then the X-ray photoelectron spectroscopic (XPS) measurements were performed to investigate their electronic structure and exploring the origin of ferromagnetism in these diluted magnetic semiconductor materials. The XPS results confirm the creation of oxygen vacancies upon Hydrogen/ vacuum annealing, owned to the (Ni/Cr) 3d¬−O 2p hybridization. The findings suggest oxygen vacancies as the intrinsic origin for ferromagnetism in doped ZnO. The important feature of this work is that the ferromagnetism and the consequent electronic property changes are found to be reversible with regard to re-heating the samples in air, showing a switch “on” and “off” ferromagnetic ordering in the ZnO matrix.

scholarly journals Activation of room-temperature ferromagnetism in Mn doped ZnO thin films by N codoping

2009 ◽  
Vol 58 (8) ◽  
pp. 5763
Author(s):  
Zou Wen-Qin ◽  
Lu Zhong-Lin ◽  
Wang Shen ◽  
Liu Yuan ◽  
Lu Lu ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Mn Doped

Strong room-temperature ferromagnetism of high-quality lightly Mn-doped ZnO grown by molecular beam epitaxy

2012 ◽  
Vol 112 (5) ◽  
pp. 053708 ◽  
Author(s):  
Zheng Zuo ◽  
Huimei Zhou ◽  
Mario J. Olmedo ◽  
Jieying Kong ◽  
Ward P. Beyermann ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Room Temperature Ferromagnetism ◽  
High Quality ◽  
Doped Zno ◽  
Mn Doped
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